SK hynix Inc. announced today that it has started mass production of the world's first triple level cell-based 321-high 4D NAND Flash with 1 Tb capacity. Following its previous record as the industry's first provider of the world's highest 238-layer NAND since June last year, SK hynix has become the world's first supplier of the NAND with more than 300 layers by finding a technological breakthrough for stacking. The company plans to provide the 321-high products to customers from the first half of next year.

Stacking more than 300 layers came into reality as the company successfully adopted the "3 plugs" process technology. Known for its excellent production efficiency, the process electrically connects three plugs through an optimized follow-up process after three times of plug processes are finished. For the process, SK hynix developed a low-stress material, while introducing the technology that automatically corrects alignments among the plugs.

SK hynix announced the first 48 GB 16-high HBM3E in the industry at the SK AI Summit in Seoul today. During the event, news came out about newer plans to develop their next-gen memory tech. Reuters and ZDNet Korea reported that NVIDIA CEO Jensen Huang asked SK hynix to speed up their HBM4 delivery by six months. SK Group Chairman Chey Tae-won shared this info at the Summit. The company had earlier said they would give HBM4 chips to customers in the second half of 2025.

When ZDNet asked about this sped-up plan, SK hynix President Kwak Noh-Jung gave a careful answer saying "We will give it a try." A company spokesperson told Reuters that this new schedule would be quicker than first planned, but they didn't share more details. In a video interview shown at the Summit, NVIDIA's Jensen Huang pointed out the strong team-up between the companies. He said working with SK hynix has helped NVIDIA go beyond Moore's Law performance gains. He stressed that NVIDIA will keep needing SK hynix's HBM tech for future products. SK hynix plans to supply the latest 12-layer HBM3E to an undisclosed customer this year, and will start sampling of the 16-layer HBM3E early next year.

SK hynix CEO Kwak Noh-Jung, during his keynote speech titled "A New Journey in Next-Generation AI Memory: Beyond Hardware to Daily Life" at SK AI Summit in Seoul, made public development of the industry's first 48 GB 16-high - the world's highest number of layers followed by the 12-high product—HBM3E. Kwak also shared the company's vision to become a "Full Stack AI Memory Provider", or a provider with a full lineup of AI memory products in both DRAM and NAND spaces, through close collaboration with interested parties.

Team Group Industrial has officially introduced the industry's first industrial-grade DDR5 6400 MHz CU-DIMM/CSO-DIMM memory modules. The innovative product addresses challenges posed by high-frequency operation on signal stability by incorporating a specialized component known as the Client Clock Driver (CKD), which effectively buffers and drives clock signals, ensuring the signals remain stable and complete even under high-frequency conditions. This advancement sets a new benchmark in industrial storage technology, enhancing reliability and performance for demanding applications.

Team Group utilizes DDR5 Clocked Unbuffered Dual Inline Memory Module technology, which enables frequency and voltage adjustments based on system load and operating conditions, facilitating exceptional data transmission speeds and optimized power consumption performance, fully supporting the dynamic load requirements prevalent in industrial applications, and delivering solutions with outstanding performance and reliability.

SK hynix Inc. announced today that it recorded 17.5731 trillion won in revenues, 7.03 trillion won in operating profit (with an operating margin of 40%), and 5.7534 trillion won in net profit (with a net margin of 33%) in the third quarter this year. Quarterly revenues marked all-time high, exceeding the previous record of 16.4233 trillion won in the second quarter of this year by more than 1 trillion won. Operating profit and net profit also far exceeded the record of 6.4724 trillion won and 4.6922 trillion won in the third quarter of 2018 during the semiconductor super boom.

SK hynix emphasized that the demand for AI memory continued to be strong centered on data center customers, and the company marked its highest revenue since its foundation by expanding sales of premium products such as HBM and eSSD. In particular, HBM sales showed excellent growth, up more than 70% from the previous quarter and more than 330% from the same period last year.

SK hynix is showcasing its leading AI and data center memory products at the 2024 Open Compute Project (OCP) Global Summit held October 15-17 in San Jose, California. The annual summit brings together industry leaders to discuss advancements in open source hardware and data center technologies. This year, the event's theme is "From Ideas to Impact," which aims to foster the realization of theoretical concepts into real-world technologies.

In addition to presenting its advanced memory products at the summit, SK hynix is also strengthening key industry partnerships and sharing its AI memory expertise through insightful presentations. This year, the company is holding eight sessions—up from five in 2023—on topics including HBM and CMS.

SK hynix Inc. announced today that it has begun mass production of the world's first 12-layer HBM3E product with 36 GB, the largest capacity of existing HBM to date. The company plans to supply mass-produced products to customers within the year, proving its overwhelming technology once again six months after delivering the HBM3E 8-layer product to customers for the first time in the industry in March this year.

SK hynix is the only company in the world that has developed and supplied the entire HBM lineup from the first generation (HBM1) to the fifth generation (HBM3E), since releasing the world's first HBM in 2013. The company plans to continue its leadership in the AI memory market, addressing the growing needs of AI companies by being the first in the industry to mass-produce the 12-layer HBM3E.

SK hynix Inc. announced today that the key features of its Heterogeneous Memory Software Development Kit (HMSDK) are now available on Linux, the world's largest open source operating system. HMSDK is SK hynix's proprietary software for optimizing the operation of Compute Express Link (CXL), which is gaining attention as a next-generation AI memory technology along with High Bandwidth Memory (HBM). Having received global recognition for HMSDK's performance, SK hynix is now integrating it with Linux. This accomplishment marks a significant milestone for the company as it highlights the company's competitiveness in software, adding to the recognition for its high-performance memory hardware such as HBM.

In the future, developers around the world working on Linux will be able to use SK hynix's technology as the industry standard for CXL memory, putting the company in an advantageous position for global collaboration on next-generation memory. SK hynix's HMSDK enhances memory package's bandwidth by over 30% without modifying existing applications. It achieves this by selectively allocating memory based on the bandwidth between existing memory and expanded CXL memory. Additionally, the software improves performance by more than 12% over conventional systems through optimization based on access frequency, a feature which relocates frequently accessed data to faster memory.

TrendForce's latest reports reveal that the second quarter of 2024 saw a significant increase in demand for enterprise SSDs due to the increased deployment of NVIDIA GPU platforms and rising storage needs driven by AI applications, along with a surge in demand from server brands. The surge in demand for high-capacity SSDs for AI applications—coupled with suppliers' inability to adjust capacity in the first half of the year—resulted in a supply shortage that drove average enterprise SSD prices up by more than 25% QoQ. This price increase led to a revenue growth of over 50% for suppliers.

Looking ahead to the third quarter, demand from North American CSP customers continues to rise, and server brands show no signs of slowing down their orders, further boosting procurement volumes of enterprise SSD. With supply shortages persisting into the third quarter, TrendForce forecasts a 15% increase in contract prices compared to the previous quarter, with supplier revenues expected to grow by nearly 20%.

SK hynix unveiled an enhanced Accelerator-in-Memory based Accelerator (AiMX) card at the AI Hardware & Edge AI Summit 2024 held September 9-12 in San Jose, California. Organized annually by Kisaco Research, the summit brings together representatives from the AI and machine learning ecosystem to share industry breakthroughs and developments. This year's event focused on exploring cost and energy efficiency across the entire technology stack. Marking its fourth appearance at the summit, SK hynix highlighted how its AiM products can boost AI performance across data centers and edge devices.

Booth Highlights: Meet the Upgraded AiMX
In the AI era, high-performance memory products are vital for the smooth operation of LLMs. However, as these LLMs are trained on increasingly larger datasets and continue to expand, there is a growing need for more efficient solutions. SK hynix addresses this demand with its PIM product AiMX, an AI accelerator card that combines multiple GDDR6-AiMs to provide high bandwidth and outstanding energy efficiency. At the AI Hardware & Edge AI Summit 2024, SK hynix presented its updated 32 GB AiMX prototype which offers double the capacity of the original card featured at last year's event. To highlight the new AiMX's advanced processing capabilities in a multi-batch environment, SK hynix held a demonstration of the prototype card with the Llama 3 70B model, an open source LLM. In particular, the demonstration underlined AiMX's ability to serve as a highly effective attention accelerator in data centers.

SK hynix Inc. announced today that it has developed PEB110 E1.S (PEB110), a high-performance solid-state drive (SSD) for data centers. With the advent of the AI era, customer demand for high-performance NAND solutions such as SSDs for data centers, as well as ultra-fast DRAM chips including high bandwidth memory (HBM), is growing. In line with this trend, the company has developed and introduced a new product with improved data processing speed and power efficiency by applying the fifth-generation (Gen 5) PCIe specifications.

SK hynix expects to meet diverse customer needs with a more robust SSD portfolio following successful mass production of PS1010 with the introduction of PEB110. The company is currently in the qualification process with a global data center customer and plans to begin mass production of the product in the second quarter of next year, pending qualification. PCle Gen 5, applied to the new product, provides twice the bandwidth of the fourth generation (Gen 4), enabling PEB110 to achieve data transfer rates of up to 32 gigatransfers per second (GT/s). This enables PEB110 to double the performance of the previous generation and improve power efficiency by more than 30%.

TrendForce reports that NAND Flash prices continued to rise in 2Q24 as server inventory adjustments neared completion and AI spurred demand for high-capacity storage products. However, high inventory levels among PC and smartphone buyers led to a 1% QoQ decline in NAND Flash bit shipments. Despite this, ASP increased by 15% and drove total revenue to US$16.796 billion, a 14.2% growth compared to the previous quarter.

All NAND Flash suppliers returned to profitability starting in the second quarter and are expanding capacity in the third quarter to meet strong demand from AI and server markets. However, weaker-than-expected PC and smartphone sales in the first half of the year are likely to constrain NAND Flash shipment growth.

SK hynix announced today that it has developed the industry's first 16 Gb DDR5 built using its 1c node, the sixth generation of the 10 nm process. The success marks the beginning of the extreme scaling to the level closer to 10 nm in the memory process technology. The degree of difficulty to advance the shrinking process of the 10 nm-range DRAM technology has grown over generations, but SK hynix has become the first in the industry to overcome the technological limitations by raising the level of completion in design, thanks to its industry-leading technology of the 1b, the fifth generation of the 10 nm process.

SK hynix said it will be ready for mass production of the 1c DDR5 within the year to start volume shipment next year. In order to reduce potential errors stemming from the procedure of advancing the process and transfer the advantage of the 1b, which is widely applauded for its best performing DRAM, in the most efficient way, the company extended the platform of the 1b DRAM for development of 1c. The new product comes with an improvement in cost competitiveness, compared with the previous generation, by adopting a new material in certain process of the extreme ultraviolet, or EUV, while optimizing the EUV application process of total. SK hynix also enhanced productivity by more than 30% through technological innovation in design.

Samsung Electronics is set to make a significant leap in semiconductor manufacturing technology with the introduction of its first High-NA 0.55 EUV lithography tool. The company plans to install the ASML Twinscan EXE:5000 system at its Hwaseong campus between Q4 2024 and Q1 2025, marking a crucial step in developing next-generation process technologies for logic and DRAM production. This move positions Samsung about a year behind Intel but ahead of rivals TSMC and SK Hynix in adopting High-NA EUV technology. The system is expected to be operational by mid-2025, primarily for research and development purposes. Samsung is not just focusing on the lithography equipment itself but is building a comprehensive ecosystem around High-NA EUV technology.

The company is collaborating with several key partners like Lasertec (developing inspection equipment for High-NA photomasks), JSR (working on advanced photoresists), Tokyo Electron (enhancing etching machines), and Synopsys (shifting to curvilinear patterns on photomasks for improved circuit precision). The High-NA EUV technology promises significant advancements in chip manufacturing. With an 8 nm resolution capability, it could make transistors about 1.7 times smaller and increase transistor density by nearly three times compared to current Low-NA EUV systems. However, the transition to High-NA EUV comes with challenges. The tools are more expensive, costing up to $380 million each, and have a smaller imaging field. Their larger size also requires chipmakers to reconsider fab layouts. Despite these hurdles, Samsung aims for commercial implementation of High-NA EUV by 2027.

SK hynix has returned to Santa Clara, California to present its full array of groundbreaking AI memory technologies at FMS: the Future of Memory and Storage (FMS) 2024 from August 6-8. Previously known as Flash Memory Summit, the conference changed its name to reflect its broader focus on all types of memory and storage products amid growing interest in AI. Bringing together industry leaders, customers, and IT professionals, FMS 2024 covers the latest trends and innovations shaping the memory industry.

Participating in the event under the slogan "Memory, The Power of AI," SK hynix is showcasing its outstanding memory capabilities through a keynote presentation, multiple technology sessions, and product exhibits.

SK hynix Inc. announced today it has signed a non-binding preliminary memorandum of terms with the U.S. Department of Commerce to receive up to $450 million in proposed direct funding and access to proposed loans of $500 million as part of the CHIPS and Science Act for its investment to build a production base for semiconductor packaging in Indiana. Separately, SK hynix plans to seek from the U.S. Department of the Treasury a tax benefit equivalent of up to 25% of the qualified capital expenditures through the Investment Tax Credit program.

SK hynix said it deeply appreciates the U.S. government's support and will comply with the requirements for the remaining procedures until the proposed funding is finalized. The company also said that it will proceed with the construction of the Indiana production base as planned to meet the plan to provide AI memory products. Through this, it looks forward to contributing to build a more resilient supply chain of the global semiconductor industry.

SK hynix is reportedly developing 400-layer NAND flash memory, with plans to begin mass production by late 2025. The company is collaborating with supply chain partners to develop the necessary process technologies and equipment for 400-layer and higher NAND chips. This information comes from a recent article by Korean media outlet etnews citing industry sources.

SK hynix intends to use hybrid bonding technology to achieve this, which is expected to bring new packaging materials and components suppliers into the supply chain. The development process involves exploring new bonding materials and various technologies for connecting different wafers, including polishing, etching, deposition, and wiring. SK hynix aims to have the technology and infrastructure ready by the end of next year.

SK hynix Inc. announced today that it introduced the industry's best-performing GDDR7, a next-generation graphics memory product. The development of GDDR7 in March comes amid growing interest by global customers in the AI space in the DRAM product that meets both specialized performance for graphics processing and fast speed. The company said that it will start volume production in the third quarter.

The new product comes with the operating speed of 32 Gbps, a 60% improvement from the previous generation and the speed can grow up to 40 Gbps depending on the circumstances. When adopted for the high-end graphics cards, the product can also process data of more than 1.5 TB per second, equivalent to 300 Full-HD movies (5 GB each), in a second.

SK hynix Inc. announced today that it has decided to invest about 9.4 trillion won in building the first fab and business facilities of the Yongin Semiconductor Cluster after the board resolution on the 26th. SK hynix designs to start construction of the 1st fab to be built in the Yongin cluster in March next year and complete it in May 2027, and have received an investment approval from the board of directors prior to it. The company will make every effort to build the fab to lay the foundation for the company's future growth and respond to the rapidly increasing demand for AI memory semiconductors.

The Yongin Cluster, which will be built on a 4.15 million square meter site in Wonsam-myeon, Yongin, Gyeonggi Province, is currently under site preparation and infrastructure construction. SK hynix has decided to build four state-of-the-art fabs that will produce next-generation semiconductors, and a semiconductor cooperation complex with more than 50 small local companies. After the construction of the 1st fab, the company aims to complete the remaining three fabs sequentially to grow the Yongin Cluster into a "Global AI semiconductor production base."

SK hynix Inc. announced today that it recorded 16.4233 trillion won in revenues, 5.4685 trillion won in operating profit (with an operating margin of 33%), and 4.12 trillion won in net profit (with a net margin of 25%) in the second quarter. Quarter revenues marked all-time high, far exceeding the previous record of 13.811 trillion won in the second quarter of 2022. Operating profit also increased significantly, marking 5 trillion won for the first time in 6 years since the second quarter (5.5739 trillion won) and the third quarter (6.4724 trillion won) of 2018 during the semiconductor super boom.

The company said that continuous rise in overall prices of DRAM and NAND products with strong demand for AI memories including HBM led to 32% increase in revenues compared to the previous quarter. Also, with the sales for premium products on the rise and exchange rate effects adding, the operating profit ratio in the second quarter rose 10 percentage points from the previous quarter to 33%, performing to market expectations.

SK hynix announced today that it developed PCB01, an SSD product with the industry's best specifications, for on-device AI PCs. The product marks the first case where the industry adopts the fifth generation of the 8-channel PCIe technology and brings innovation to performance including the data processing speed. The company expects the latest advancement in the NAND solution space to add to its success stories in the high-performance DRAM area led by HBM, enhancing its leadership in the overall AI memory space.

With a validation process with a global PC customer underway, SK hynix plans to mass produce and start shipping the products to both corporate customers and general consumers within this year. PCB01 comes with the capabilities of sequential read and write speeds of 14 GB and 12 GB per second, respectively, bringing the performance of an SSD to the level unseen before. The speeds allow the operation of a large language model or LLM, for AI training and inference, in a second.

Competition among Samsung, SK Hynix, and Micron is intensifying, with a focus on enhancing processing speed and efficiency in graphics DRAM (GDDR) for AI accelerators and cryptocurrency mining. Compared with High Bandwidth Memory (HBM), the GDDR7 has a faster data processing speed and a relatively low price. Since Nvidia is expected to use next-generation GDDR7 with its GeForce RTX50 Blackwell GPUs, competition will likely be as strong as the demand. We can see that by looking, for example, at the pace of new GDDR7 releases from the past two years.

In July 2022, Samsung Electronics developed the industry's first 32 Gbps GDDR7 DRAM, capable of processing up to 1.5 TB of data per second, a 1.4 times speed increase and 20% better energy efficiency compared to GDDR6. In February 2023, Samsung demonstrated its first GDDR7 DRAM with a pin rate of 37 Gbps. On June 4, Micron launched its new GDDR7 at Computex 2024, with speeds up to 32 Gbps, a 60% increase in bandwidth, and a 50% improvement in energy efficiency over the previous generation. Shortly after, SK Hynix introduced a 40 Gbps GDDR7, showcased again at Computex 2024, doubling the previous generation's bandwidth to 128 GB per second and improving energy efficiency by 40%.

SK hynix has returned to Las Vegas to showcase its leading AI memory solutions at HPE Discover 2024, Hewlett Packard Enterprise's (HPE) annual technology conference. Held from June 17-20, HPE Discover 2024 features a packed schedule with more than 150 live demonstrations, as well as technical sessions, exhibitions, and more. This year, attendees can also benefit from three new curated programs on edge computing and networking, hybrid cloud technology, and AI. Under the slogan "Memory, The Power of AI," SK hynix is displaying its latest memory solutions at the event including those supplied to HPE. The company is also taking advantage of the numerous networking opportunities to strengthen its relationship with the host company and its other partners.

The World's Leading Memory Solutions Driving AI
SK hynix's booth at HPE Discover 2024 consists of three product sections and a demonstration zone which showcase the unprecedented capabilities of its AI memory solutions. The first section features the company's groundbreaking memory solutions for AI, including HBM solutions. In particular, the industry-leading HBM3E has emerged as a core product to meet the growing demands of AI systems due to its exceptional processing speed, capacity, and heat dissipation. A key solution from the company's CXL lineup, CXL Memory Module-DDR5 (CMM-DDR5), is also on display in this section. In the AI era where high performance and capacity are vital, CMM-DDR5 has gained attention for its ability to expand system bandwidth by up to 50% and capacity by up to 100% compared to systems only equipped with DDR5 DRAM.

Mimir IP, a South Korean patent management company, bought around 1,500 chip-related patents from SK hynix in May. They have now filed a lawsuit against the U.S. memory company Micron, accusing it of using these patents without permission, TrendForce reported. If Mimir wins, they could get up to USD 480 million in damages. The lawsuit, filed on June 3, also targets Tesla, Dell, HP, and Lenovo for using Micron's products. The patents in question are related to circuits, voltage measurement devices, and non-volatile memory devices.

The case is being heard in the US District Court for the Eastern District of Texas and the US International Trade Commission. This is the first time a South Korean company that acquired patents from domestic chipmakers has filed a lawsuit against a US semiconductor company. Officials from the involved companies have not commented. Micron, Samsung, and SK hynix have been changing how they deal with their patents recently, so this is not really a surprise move. In March 2023, Micron transferred over 400 chip-related patents to Lodestar Licensing Group. In June 2023, Samsung transferred 96 US chip patents, including the right to file patent infringement complaints, to IKT, an affiliate of Samsung Display.

TrendForce reveals that the DRAM industry experienced a 5.1% revenue increase in 1Q24 compared to the previous quarter. This growth—reaching US$18.35 billion—was driven by rising contract prices for mainstream products, with the price increase being more significant than in 4Q23. As a result, most companies in the industry continued to see revenue growth.

The top three suppliers experienced a decline in shipments in the first quarter, demonstrating the industry's off-season effect. Additionally, downstream companies had higher inventory levels, which led to a significant reduction in procurement volume. As for ASP, the top three suppliers continued to benefit from contract price increases seen in 4Q23. With inventory levels still healthy, there was a strong intention to raise prices.