SK hynix shared its technology roadmap, solution strategies, and AI cloud vision for leading the AI era at HPE Discover Las Vegas 2025 held from June 23-26. HPE Discover is a global technology conference hosted by Hewlett Packard Enterprise (HPE). This year's Las Vegas event highlighted the arrival of the AI era and its future possibilities. The conference featured a wide range of technical presentations, a networking program with demos and exhibitions, and hands-on training sessions such as the Tech Pro University and AI Developer Workshop.

SK hynix showcased its technological leadership through presentations and exhibitions highlighting its next-generation AI memory, server, and storage solutions essential for developing AI infrastructure. The exhibition was divided into four key sections: HBM, Server DIMM, eSSDs and CMM (CXL Memory Module)-DDR5. Each section of the booth, which featured eye-catching designs including product mascots, presented key products and solutions.

During the Intel AI Summit in Seoul, South Korea, Intel teased its upcoming product portfolio, featuring next-generation memory technologies. Being in Seoul, memory makers like SK Hynix are Intel's main partners for these products. Teased at the summit is Intel's upcoming AI accelerator, called "Jaguar Shores," which utilizes the next-generation HBM4 memory, offering 2.0 TB/s of bandwidth per module across 2,048 IO pins. SK Hynix plans to support this accelerator with its memory, ensuring that Intel's big data center-grade AI accelerator is equipped with the fastest memory on the market. Since the "Falcon Shores" accelerator is only intended for testing with external customers, we don't have an exact baseline to compare to, and Jaguar Shores specifications are scarce.

Next up, Intel confirmed that its upcoming seventh-generation "Diamond Rapids" Xeon processors will use the second generation of MRDIMMs (Multiplexer Rank Dual Inline Memory Modules), an upgrade from the first-generation MRDIMMs used in the Xeon 6 family. The upgrade to MRDIMMs Gen 2 will allow Intel to push transfer rates to 12,800 MT/s, up from 8,800 MT/s in Xeon 6 with MRDIMMs Gen 1. Alongside this 45% speed bump in raw transfer rates, the memory channels are jumping to 16, up from 12 in the current generation, yielding an additional bandwidth boost. Given that MRDIMMs operate by connecting more memory ranks using a multiplexer, and that these modules buffer data and commands, the increased data transfer rate comes without any additional signal degradation. As Intel is expected to pack more cores, this will be an essential piece in the toolbox to feed them and keep those cores busy on the Oak Stream platform, based on the LGA9324 socket.

TrendForce's latest investigations reveal that several negative factors weighed on the enterprise SSD market in the first quarter of 2025. These include production challenges for next-gen AI systems and persistent inventory overhang in North America. As a result, major clients significantly scaled back orders, causing the ASP of enterprise SSDs to plunge nearly 20%. This led to QoQ revenue declines for the top five enterprise SSD vendors, reflecting a period of market adjustment.

However, conditions are expected to improve in the second quarter. As shipments of NVIDIA's new chips ramp up, demand for AI infrastructure in North America is rising. Meanwhile, Chinese CSPs are steadily expanding storage capacity in their data centers. Together, these trends are set to reinvigorate the enterprise SSD market, with overall revenue projected to return to positive growth.

Micron has informed its customers that its DDR4 memory products will reach the end of life in the coming quarters, with shipments expected to taper off over the next six to nine months. This announcement aligns Micron with the earlier plans of Samsung and SK Hynix to discontinue DDR4 production and focus on next-generation memory solutions, such as DDR5, LPDDR5, and high-bandwidth memory. In a recent interview, Micron's Executive Vice President and Chief Business Officer, Sumit Sadana, acknowledged that the phase‑out comes at a time when demand for DDR4 remains unexpectedly strong. He noted that shortages of both DDR4 and LPDDR4 modules have driven spot-market prices to levels that, in some cases, exceed those of newer DDR5 products.

To address this imbalance, Micron will prioritize supply for long‑term partners in the automotive, industrial, and networking sectors, where product reliability and contract stability are critical. The retirement of DDR4 has been partly driven by competitive pressure from Chinese memory manufacturers, which have flooded the market with lower‑cost modules. Yet, these newcomers may face challenges in matching the quality, long-term support, and volume capabilities that established players provide. Micron is urging its customer base to transition to DDR5 and LPDDR5 products, which have reached competitive price points and offer superior bandwidth and energy efficiency.

SK hynix Inc. announced today that it presented a new DRAM technology roadmap for the next 30 years and the direction for a sustainable innovation at the IEEE VLSI symposium 2025 held in Kyoto, Japan. Cha Seon Yong, Chief Technology Officer (CTO) of SK hynix, delivered on June 10th a plenary session on "Driving Innovation in DRAM Technology: Towards a Sustainable Future".

In his speech, CTO Cha explained that it is increasingly difficult to improve performance and capacity with scaling through current technology platform. "In order to overcome such limitations, SK hynix will apply the 4F² VG (Vertical Gate) platform and 3D DRAM technology to technologies of 10-nanometer level or below with innovation in structure, material and components," he said. The 4F² VG platform is a next-generation memory technology that minimizes the cell area of DRAM and enables high-integration, high-speed and low-power through a vertical gate structure.

TrendForce's latest findings reveal that global revenue for the DRAM industry reached US$27.01 billion in 1Q25, marking a 5.5% QoQ decline. This downturn was driven by falling contract prices for conventional DRAM and a contraction in HBM shipment volumes. Samsung's redesign of its HBM3e products eased the HBM production squeezes. This prompted downstream players to clear inventories and extended the price declines seen since 4Q24.

Looking ahead to 2Q25, as PC OEMs and smartphone makers complete inventory corrections and ramp up system production ahead of the 90-day U.S. reciprocal tariff grace period, bit procurement momentum is expected to strengthen significantly. This will drive notable increases in supplier shipment volumes. On the pricing side, TrendForce forecasts a rebound across major application contract prices, with both conventional DRAM and combined DRAM (including HBM) contract prices expected to rise.

SK hynix presented its leading memory solutions optimized for AI servers and AI PCs at Dell Technologies World (DTW) 2025 in Las Vegas from May 19-22. Hosted by Dell Technologies, DTW is an annual conference which introduces future technology trends. In line with DTW 2025's theme of "Accelerate from Ideas to Innovation," a wide range of products and technologies aimed at driving AI innovation was showcased at the event.

Based on its close partnership with Dell, SK hynix has participated in the event every year to reinforce its leadership in AI. This year, the company organized its booth into six sections: HBM, CMM (CXL Memory Module)-DDR5, server DRAM, PC DRAM, eSSDs, and cSSDs. Featuring products with strong competitiveness across all areas of DRAM and NAND flash for the AI server, storage and PC markets, the booth garnered strong attention from visitors.

SK hynix Inc. announced today that it has developed UFS 4.1 solution product adopting the world's highest 321-layer 1 Tb triple level cell 4D NAND flash for mobile applications. The development comes amid increasing requirements for high performance and low power of a NAND solution product to ensure a stable operation of on-device AI. The company expects the UFS 4.1 product, optimized for AI workload, to help enhance its memory leadership in the flagship smartphone markets.

With an increase in demand for on-device AI leading to greater importance of the balance between computation capabilities and battery efficiency of a device, the mobile market is now requiring thinness and low power from a mobile device. The latest product comes with a 7% improvement in power efficiency, compared with the previous generation based on 238-high NAND and a slimmer 0.85 mm thickness, down from 1 mm before, to fit into ultra-slim smartphones.

Around mid-February, South Korean sources alleged that NVIDIA was in the process of developing an innovative new memory form factor. The System on Chip Advanced Memory Module (SOCAMM) design is reportedly a collaborative effort. Team Green's usual set of memory partners—SK Hynix, Samsung, and Micron—were mentioned in early 2025 news articles. Just over a month later, official press material revealed a key forthcoming deployment—Micron stated: "(our) SOCAMM (product), a modular LPDDR5X memory solution, was developed in collaboration with NVIDIA to support the NVIDIA GB300 Grace Blackwell Ultra Superchip. In a (rumored) blow to all involved parties, ZDNet Korea posits that Team Green has postponed the commercialization of their "next-generation low-power DRAM module" IP. According to industry moles, the SOCAMM standard will not debut with this generation of enterprise-focused "Grace-Blackwell" chips. Instead, fresher theories indicate a postponement into next-gen territories—possibly rescheduled to arrive alongside the firm's "Rubin" GPU architecture.

NVIDIA has reportedly sent out notices to major memory partners—(alleged) May 14 updates were received by Samsung Electronics and SK Hynix (in South Korea) and Micron (USA). As a result, SOCAMM supply timelines are (apparently) adjusted. A newer "Cordelia" board design—acting as a substrate for GB300 chips, and compatible with SOCAMM—was in the picture. The latest whispers suggest a return to an existing "Bianca" board configuration, that supports current-gen LPDDR memory modules. ZDNet believes that company engineers have run into several obstacles: "Blackwell chips have been continuously experiencing difficulties in securing design and packaging yields. In fact, the 'Cordelia' board is known to have reliability issues, such as data loss, and SOCAMM has reliability issues, such as heat dissipation characteristics." NVIDIA briefly previewed its futuristic "Rubin Ultra" AI GPU design during GTC 2025—on-stage, a "second half of 2027" release window was teased.

The vast majority of High Bandwidth Memory (HBM) new stories—so far, in 2025—have involved or alluded to new-generation SK hynix and Micron products. As mentioned in recently published Samsung Electronics Q1 financial papers, company engineers are still working on "upcoming enhanced HBM3E products." Late last month, a neighbor/main rival publicly showcased their groundbreaking HBM4 memory solution—indicating a market leading development position. Samsung has officially roadmapped a futuristic "sixth-generation" HBM4 technology, but their immediate focus seems to be a targeted sales expansion of incoming "enhanced HBM3E 12H" products. Previously, the firm's Memory Business has lost HBM3 ground—within AI GPU/accelerator market segments—to key competitors.

Industry insiders believe that company leadership will attempt to regain lost market shares in a post-2025 world. As reported by South Korean news outlets, Kim Jae-joon (VP of Samsung's memory department) stated—during a recent earnings call, with analysts—that his team is: "already collaborating with multiple customers on custom versions based on both HBM4 and the enhanced HBM4E." The initiation of commercial shipments is anticipated at some point in 2026, hinging on mass production starting by the second half of this year. The boss notified listeners about development "running on schedule." A Hankyung article alleges that Samsung HBM4 evaluation samples have been sent out to "NVIDIA, Broadcom, and Google." Wccftech posits a positive early outlook: "Samsung will use its own 4 nm process from the foundry division and utilize the 10 nm 6th-generation 1c DRAM, which is known as one of the highest-end in the market. On paper, (their) HBM4 solution will be on par with competing models (from SK hynix), but we will have to wait and see."

As a GPU supply chain gets regularly updated, NVIDIA quietly added a new memory partner to its GeForce RTX 50 series lineup, bringing SK Hynix on board alongside Samsung for GDDR7 modules. Early mentions suggested that SK Hynix memory would appear on standard RTX 5070 cards. Still, the first sightings were on RTX 5070 Ti models, especially in China, where these cards have arrived ahead of other regions. Users on Chiphell and Baidu, verifying their GPUs with GPU-Z, discovered that the SK Hynix chips, which officially run at 28 Gbps, can be safely overclocked to 34 Gbps. This shows that switching to a second supplier does not hurt performance or overclocking headroom, so enthusiasts can expect the same headroom they've enjoyed with Samsung-sourced modules.

That said, some owners have encountered an obstacle when cross-flashing BIOS files with SKUs that use Samsung memory. Flashing an RTX 5070 Ti BIOS from a Samsung-equipped card onto one built with SK Hynix memory sometimes prevents the GPU from booting. However, dual-BIOS designs let users switch back to factory firmware and restore normal operation without too much fuss. As VideoCardz pointed out, TechPowerUp's BIOS database indicates that current firmware versions from various board partners already include support for GDDR7 modules from Samsung, SK Hynix, and even Micron. This suggests that these flashing issues aren't simply a matter of unrecognized memory. It could be related to board-specific power settings or other configuration quirks, with every GPU maker designing their boards differently, yielding possible errors if the firmware is swapped. Since SK Hynix-based cards run fine out of the box, most users won't have any reason to flash different firmware.

SK hynix showcased groundbreaking memory solutions including HBM4 at the TSMC 2025 North America Technology Symposium held in Santa Clara, California on April 23. The TSMC North America Technology Symposium is an annual event in which TSMC shares its latest technologies and products with global partners. This year, SK hynix participated under the slogan "Memory, Powering AI and Tomorrow," highlighting its technological leadership in AI memory through exhibition zones including HBM Solutions and AI/Data Center Solutions.

In the HBM Solution section, SK hynix presented samples of its 12-layer HBM4 and 16-layer HBM3E products. The 12-layer HBM4 is a next-generation HBM capable of processing over 2 terabytes (TB) of data per second. In March, the company announced it has become the first in the world to supply HBM4 samples to major customers and plans to complete preparations for mass production within the second half of 2025. The B100, NVIDIA's latest Blackwell GPU equipped with the 8-layer HBM3E, was also exhibited in the section along with 3D models of key HBM technologies such as TSV and Advanced MR-MUF, drawing significant attention from visitors.

SK hynix Inc. (or "the company", www.skhynix.com) announced today that it recorded 17.6391 trillion won in revenues, 7.4405 trillion won in operating profit (with an operating margin of 42%), and 8.1082 trillion won in net profit (with a net margin of 46%) in the first quarter this year. Both revenues and operating profit are the 2nd highest records following last quarter when the company achieved its best quarterly results. Operating margin improved by 1% compared to the previous quarter to 42%, resulting in 8th consecutive quarterly growth.

SK hynix explained that memory market ramped up faster than expected due to competition to develop AI systems and inventory accumulation demand. The company responded to the demand with an expansion in sales of high value-added products such as 12-layer HBM3E and DDR5. The company believes the strong financial results despite a low seasonality reflect its outstanding competitiveness compared to the past. The company plans to focus on enhancing the business fundamentals to achieve distinguished financial outcome, even in times of market correction.

Just before the official launch of Radeon RX 9070 XT graphics cards, members of the Chiphell forum expressed concerns about unnamed evaluation samples exhibiting worrying memory module temperatures. Days later, Western review outlets published similar findings across several board partner specimens. Typically, pre-launch and retail units have utilized SK hynix GDDR6 VRAM modules—TechPowerUp's W1zzard uncovered numerous examples of the manufacturer's "H56G42AS8DX-014" model during teardown sessions. Curiously, Chinese PC hardware enthusiasts have happened upon Radeon RX 9070 XT cards that utilize Samsung GDDR6 memory modules. It is not clear whether Yeston has outfitted its flagship Sakura Atlantis OC SKU with Samsung components from the very beginning, but one owner documented a GPU-Z diagnostics session—late last month—showing "GDDR6 (Samsung)" onboard. Earlier this month, insiders posited that NVIDIA was in the process of changing its main GDDR7 memory vendor—from Samsung to SK hynix—for the GeForce RTX 50-series.

According to a recent Guru3D news piece, additional cases were reported. Online conjecture points to "higher end" custom models being updated with "cooler" modules. Hilbert Hagedoorn—Guru3D's head honcho—has gathered compelling information via community feedback channels: "the transition to Samsung memory has yielded noticeable thermal advantages. Early reviews and comparisons indicate that the new memory modules help lower temperatures significantly. Custom RX 9070 XT models running demanding benchmarks like Furmark have demonstrated memory temperatures of 75°C or lower without necessitating an increase in voltage or a reduction in clock speeds. Notable manufacturers, including Sapphire, XFX, and GIGABYTE, have already integrated Samsung's GDDR6 into their custom variants. However, as of now, AMD has not authorized its partners to explicitly differentiate between models with SK hynix and Samsung memory, likely to avoid confusion among consumers and maintain a consistent product lineup." Additionally, TechPowerUp forum members have found Samsung GDDR6 memory on Radeon RX 9070 XT and RX 9070 custom models. Thanks for the tip, Fluffmeister.

SK hynix Inc. announced today that it has completed customer validation of 96 GB CMM (CXL Memory Module) - DDR5, a DRAM solution product based on CXL 2.0. The company said that it can process 36 GB/s due to a 50% increase in capacity when the product is applied to the server systems and a 30% improvement in the bandwidth compared to previous DDR5 modules. This can contribute to drastically reducing the total cost of ownership by customers in building and operating data centers.

Following the 96 GB product validation, the company is proceeding with the validation process for 128 GB product with another customer. This product, equipped with 32 Gb DDR5 DRAM using the 1bnm process, or the fifth-generation of the 10-nanometer technology, has high performance per watt. The company plans to complete the ongoing 128 GB validation as soon as possible to establish a CXL product portfolio to support customers in a timely manner. SK hynix is making efforts to expand the CXL ecosystem along with the development of CXL DRAM. The company developed HMSDK, software optimized for CMM-DDR5 and integrated it on Linux, the world's largest open-source operating system, in September, improving the performance of CXL applied systems.

So far, NVIDIA's GeForce RTX 50xx graphics card models have shipped with Samsung GDDR7 memory modules onboard. According to a fresh MEGAsizeGPU (aka @Zed__Wang) claim, a change in vendor has already occurred. The tenured tracker of Team Green inside track information believes that the company has: "started to use SK hynix GDDR7 for the GeForce RTX 50 series graphics cards. Started with GeForce RTX 5070 first." Officially, NVIDIA's latest board designs can support GDDR7 modules produced by the "big three:" Samsung, SK hynix and Micron (see BIOS info below). Team Green's comfortable market leading position probably grants plenty of negotiation power to pick and choose the best component deals. Day one evaluators performed teardowns on GeForce RTX 50 series review samples; TechPowerUp's W1zzard found Samsung "K4VAF325ZC-SC32" GDDR7 units—rated for 32 Gbps—onboard various GeForce RTX 5080 16 GB models. As outlined by VideoCardz, the rest of NVIDIA's "Blackwell" gaming product stack sticks with 28 Gbps-rated Samsung GDDR7 modules, extending to its Mobile portfolio.

Intel and SK Hynix have finalized an $8.85 billion transaction involving Intel's NAND flash memory operations, marking the conclusion of a two-phase deal initiated in 2020. In the first phase of the transaction, SK Hynix acquired Intel's SSD division along with a NAND production facility in Dalian, China, for $6.61 billion. The Dalian facility was later rebranded as Solidigm. Notably, this phase transferred only the physical assets and operational facilities, leaving behind critical intellectual property, research and development infrastructure, and specialized technical staff. The second phase, finalized with a payment of $1.9 billion this Tuesday, addressed these remaining components. With this payment, SK Hynix secured full rights to Intel's proprietary NAND technology, R&D resources, and the technical workforce dedicated to NAND operations.

During the transition period, Intel maintained control over these elements, which limited integration between Solidigm and Intel's NAND teams. This separation was designed to manage operational risks and gradually transfer capabilities. Completing this deal helps with a strategic restructuring of Intel's portfolio as it shifts focus toward high-growth areas such as AI chip development, foundry services, and next-generation semiconductor manufacturing. A $1.9 billion financial injection is perfect in time for Intel Foundry business, burning billions per year, to offset some of the losses. For SK Hynix, consolidating the complete range of Intel's NAND operations enhances its competitive position in the global NAND market, providing access to established technologies and key industry expertise. This finalization is part of a broader trend where companies divest from commoditized memory products to concentrate on more advanced semiconductor solutions like AI chips and other accelerators, which are enjoying higher margins and a better business outlook.

SK hynix Inc. announced today that it has shipped the samples of 12-layer HBM4, a new ultra-high performance DRAM for AI, to major customers for the first time in the world. The samples were delivered ahead of schedule based on SK hynix's technological edge and production experience that have led the HBM market, and the company is to start the certification process for the customers. SK hynix aims to complete preparations for mass production of 12-layer HBM4 products within the second half of the year, strengthening its position in the next-generation AI memory market.

The 12-layer HBM4 provided as samples this time feature the industry's best capacity and speed which are essential for AI memory products. The product has implemented bandwidth capable of processing more than 2 TB (terabytes) of data per second for the first time. This translates to processing data equivalent to more than 400 full-HD movies (5 GB each) in a second, which is more than 60 percent faster than the previous generation, HBM3E.

SK hynix Inc. announced today that it will participate in the GTC 2025, a global AI conference taking place March 17-21 in San Jose, California, with a booth titled "Memory, Powering AI and Tomorrow". The company will present HBM and other memory products for AI data centers and on-device and memory solutions for automotive business essential for AI era.

Among the industry-leading AI memory technology to be displayed at the show are 12-high HBM3E and SOCAMM (Small Outline Compression Attached Memory Module), a new memory standard for AI servers.

TrendForce's latest research reveals that the NAND Flash market faced downward pressure in 4Q24 as PC and smartphone manufacturers continued inventory clearance efforts, leading to significant supply chain adjustments. Consequently, NAND Flash prices reversed downward, with ASP dropping 4% QoQ, while overall bit shipments declined by 2%. Total industry revenue fell 6.2% QoQ to US$16.52 billion.

Looking ahead to 1Q25, the traditional slow season effect remains unavoidable despite suppliers actively reducing production. Server and other key end-market inventory restocking has slowed, and with both order volumes and contract prices declining sharply. NAND Flash industry revenue is expected to drop by up to 20% QoQ. However, as production cuts take effect and prices stabilize, the NAND Flash market is expected to recover in the second half of 2025.

TrendForce's latest research reveals that global DRAM industry revenue surpassed US$28 billion in 4Q24, marking a 9.9% QoQ increase. This growth was primarily driven by rising contract prices for server DDR5 and concentrated shipments of HBM, leading to continued revenue expansion for the top three DRAM suppliers.

Most contract prices across applications were seen to have reversed downward. However, increased procurement of high-capacity server DDR5 by major American CSPs helped sustain price momentum for server DRAM.

Almost five years ago, SK hynix announced a planned $9 billion acquisition of Intel's NAND flash memory and storage business. The semiconductor giant's takeover process has been a gradual affair; the first phase was complete by the end of 2021, with Asian governing bodies—just before Christmas—giving clearance to absorb Chinese facilities. Within this time frame, the South Korean giant pulled in Team Blue's SSD NAND design and R&D departments—thus establishing the "Solidigm" entity. According to a new Businesskorea report, SK hynix is about to pay off a final installment; allegedly $2.235 billion.

Industry insiders believe that SK hynix's takeover of Intel NAND and storage properties will be completed by next month. This (rumored) March time fortification will place SK hynix in direct competition with a nearby rival: Samsung. Businesskorea believes that recent expansions signal a "competitive edge"—targeting increased demand for enterprise SSD products. Google and Meta are reportedly engaged in widespread upgrading of data center facilities. The local publication reckons that: "SK Hynix plans to capitalize on this trend by strengthening its position in the market and leveraging AI to drive innovation and growth." The aforementioned absorption of Intel intellectual property (IP) plus R&D resources is viewed as a crucial move in reinforcing an already solid foundation.

Inside sources—familiar with goings-ons at leading DRAM manufacturing firms—have predicted the end of DDR3 and DDR4 production lines. According to a DigiTimes Asia report (citing Nikkei), industry observers have noticed that the DRAM market is undergoing a so-called "shift." They believe that pricing trends are decreasing due to weak demand. Samsung Electronics, SK Hynix, and Micron are named as major players; allegedly involved in devising new strategies—in reaction to fluid market circumstances. The DigiTimes insider network proposes that the big three: "may phase out DDR3 and DDR4 by 2025...by the end of 2025...anticipating a future focused on advanced memory technologies." Older standards are falling out of favor, with DDR5 and high-bandwidth memory (HBM) on the ascent. Industry watchdogs reckon that possible DDR3 and DDR4 supply shortages could occur "post-summer 2025."

Taiwan's Nanya Technology has predicted that the overall DRAM market will "bottom out" within the first half of 2025. An eventual recovery is envisioned by the second quarter; AI-related demands could help drive up demand by a large margin. Additionally, Nanya points to improved inventory management and global economic stimulus. Taiwanese DRAM production houses are expected to pick up some slack, but an unnamed "key component distributor" anticipates serious after-effects. An anonymous source believes that the: "anticipated halt in production could lead to significant supply constraints, challenging market dynamics and impacting pricing strategies." Nanya Technology and Winbond Electronics produce specialized DRAM-types; therefore are not touted to be great gap fillers. The latter is reportedly reacting to weak demand for "mature" DDR products—DigiTimes commented on this development: "Winbond Electronics is advancing its manufacturing by transitioning to a 16 nm process in the latter half of 2025. This upgrade from the current 20 nm process, primarily used for 4 Gb DDR3 and DDR4, will enable Winbond to produce 8 Gb DDR memory."

NVIDIA and its memory partners, SK Hynix, Samsung, and Micron, are preparing a new memory form factor called System on Chip Advanced Memory Module—SOCAMM shortly. This technology, adapting to the now well-known CAMM memory module standard, aims to bring additional memory density to NVIDIA systems. Taking inspiration from NVIDIA's Project DIGITS, it has now been developed independently by NVIDIA outside of any official memory consortium like JEDEC. Utilizing a detachable module design, SOCAMM delivers superior specifications compared to existing solutions, featuring 694 I/O ports (versus LPCAMM's 644 and traditional DRAM's 260), direct LPDDR5X memory substrate integration, and a more compact form factor.

For reference, current-generation Project DIGITS is using NVIDIA GB10 Grace Blackwell Superchip capable of delivering one PetaFLOP of FP4 compute, paired with 128 GB of LPDDR5X memory. This configuration limits the size of AI models that run locally on the device, resulting in up to 200 billion parameter models running on a single Project DIGITS AI PC. Two stacked Project DIGITS PCs are needed for models like Llama 3.1 405B with 405 billion parameters. Most interestingly, memory capacity is the primary limiting factor; hence, NVIDIA devotes its time to developing a more memory-dense SOCAMM standard. Being a replacement compatible with LPDDR5, it can use the same controller silicon IP with only the SoC substrate being modified to fit the new memory. With NVIDIA rumored to enter the consumer PC market this year, we could also see an early implementation in consumer PC products, but the next-generation Project DIGITS is the primary target.

V-COLOR Technology Inc. proudly introduces the groundbreaking CKD SCC (Speed Booster, Colorful Makeover and Cost effective) O CUDIMM RGB Filler Kit 2+2 (2 DRAM Modules + 2 Filler Modules) additions to its DDR5 memory lineup, redefining high-performance and customization. With the launch of the new SCC O CUDIMM RGB Filler Kit now compatible with Intel Core Ultra CPUs Motherboards 800 series up to 8800 MT/s and not only that, the already existent SCC UDIMM kit just got a massive upgrade now reaching 8000 MT/s with dual profiles for Intel XMP 3.0 and AMD EXPO. This new SCC line will be under the family of the already amazing XFinity series that continues to push the boundaries of memory innovation.

The latest CKD SCC O CUDIMM is optimized for Intel Core Ultra CPUs and Z890 series motherboards, offering unmatched performance and stability. With speeds reaching 8000 MT/s ~ 8200 MT/s for 32 GB (2x 16 GB) configurations and 7000 MT/s ~ 8800 MT/s for 48 GB (2x 24 GB) configurations. The latest lineup of SCC technology doesn't just revolutionize the new O CUDIMM memory modules; it also pushes the boundaries of already existing UDIMMs to unprecedented levels. Speeds now reach an impressive 7200 MT/s up to 8000 MT/s, while the addition of dual profiles ensures seamless compatibility and performance optimization for both AMD EXPO and Intel XMP 3.0 systems. This development bridges accessibility across platforms, offering next-level performance for enthusiasts and professionals alike.