KIOXIA America, Inc. today announced sampling of its 1 terabyte (TB) Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. Housed in a 1.1 mm-high package - making it the thinnest 1 TB UFS offering available - the new product utilizes KIOXIA's BiCS FLASH 3D flash memory and achieves sequential read speed of up to 2,050 MB/sec and sequential write speed of up to 1,200 MB/sec.

Mobile devices are constantly evolving, and 5G networks are poised to deliver levels of speed, scale and complexities the likes of which have never been seen before. Reaping the connectivity benefits of 5G - namely, faster downloads and reduced lag time - requires high performance and low power consumption. Additionally, with 5G making it easier and faster for users to store even more on their mobile devices, the storage requirements for smartphones and other applications are increasing at a rapid pace. KIOXIA's 1 TB UFS brings the ultra-high speed read/write performance, low power consumption, shortened application launch times and storage capacity demanded by 5G and other digital consumer products.

Embedded storage has gradually matured over its years of development. However, as technology has developed, market demands towards the stability of embedded storage products has also increased. Only by improving their products and technologies and pushing the boundaries of technology can storage enterprises weather the storm of the rapidly changing market.

In 2020, FORESEE, Longsys' embedded storage brand, launched a compact eMMC packaged in BGA 153, with dimensions of only 9.0 x 7.5 x 0.8 mm. This is in stark contrast to the standard dimensions of 11.5x13x1.2 mm. The operating temperature ranges from -25°C to 85°C, reaching the standards seen in industrial-grade products, and the maximum capacity can reach up to 64 GB. It meets all market requirements for high performance, low power consumption, slimness, and multiple capacities, and satisfies the needs of terminal equipment such as tablets, smart phones, smart speakers, dash cams, and smart watches.

The percentage distribution of 2021 NAND Flash bit demand by application currently shows that client SSD accounts for 31%, enterprise SSD 20%, eMMC/UFS 41%, and NAND wafer 8%, according to TrendForce's latest investigations. TrendForce expects NAND Flash ASP to undergo QoQ declines throughout 2021, since the number of NAND suppliers far exceeds DRAM suppliers, and the bit supply remains high. As Samsung, YMTC, SK Hynix, and Intel actively expand their NAND Flash bit output in 1Q21, the oversupply situation in the industry will become more severe, with a forecasted 6% QoQ increase in NAND Flash bit output and a 10-15% QoQ decline in NAND Flash ASP in 1Q21.

JEDEC Solid State Technology Association, the worldwide leader in the development of standards for the microelectronics industry, today announced the publication of JESD220-2B Universal Flash Storage (UFS) Card Extension Standard 3.0. This new version of the removable memory card standard defines functionality closely aligned with the popular UFS 3.0 embedded device standard already widely recognized in many high-end mobile and consumer-focused applications. JESD220-2B is now available for download from the JEDEC website.

UFS is a prominent high-performance interface designed for use in applications where power consumption needs to be minimized, including mobile systems such as smartphones and tablets as well as for automotive and IOT applications. Its high-speed serial interface and optimized protocol enable major improvements in throughput and system performance.

Total NAND Flash revenue reached US$14.5 billion in 3Q20, a 0.3% increase QoQ, while total NAND Flash bit shipment rose by 9% QoQ, but the ASP fell by 9% QoQ, according to TrendForce's latest investigations. The market situation in 3Q20 can be attributed to the rising demand from the consumer electronics end as well as the recovering smartphone demand before the year-end peak sales season. Notably, in the PC market, the rise of distance education contributed to the growing number and scale of Chromebook tenders, but the increase in the demand for Chromebook devices has not led to a significant increase in NAND Flash consumption because storage capacity is rather limited for this kind of notebook computer. Moreover, clients in the server and data center segments had aggressively stocked up on components and server barebones during 2Q20 due to worries about the impact of the pandemic on the supply chain. Hence, their inventories reached a fairly high level by 3Q20. Clients are now under pressure to control and reduce their inventories during this second half of the year. With them scaling back procurement, the overall NAND Flash demand has also weakened, leading to a downward turn in the contract prices of most NAND Flash products.

Micron Technology, Inc., today announced the launch of uMCP5, the industry's first universal flash storage (UFS) multichip package with low-power DDR5 (LPDDR5) DRAM. Now ready for mass production, Micron's uMCP5 combines high-performance, high-density and low-power memory and storage in one compact package, equipping smartphones to handle data-intensive 5G workloads with dramatically increased speed and power efficiency. The multichip package uses Micron's LPDDR5 memory, high-reliability NAND and leading-edge UFS 3.1 controller to power advanced mobile features previously only seen in costly flagship devices using discrete products, such as stand-alone memory and storage. Now available on other high-end phones, these emerging technologies—such as image recognition, advanced artificial intelligence (AI), multicamera support, augmented reality (AR) and high-resolution displays—are becoming accessible to more consumers.

"Moving 5G's potential from hype to reality will require smartphones that can support the immense volumes of data flowing through the network and next-gen applications," said Raj Talluri, senior vice president and general manager of Micron's Mobile Business Unit. "Our uMCP5 combines the fastest memory and storage in a single package, unleashing new possibilities for 5G's disruptive, data-rich technologies right at consumers' fingertips."

Samsung today announced the Galaxy Chromebook, a premium Google ChromeOS 2-in-1 device that converts between a conventional notebook and a tablet with a stylus. This is the first time Samsung is bringing its Android-focused Galaxy brand over to its Chromebook family. The $999 price-tag may look like a tall ask for a Chromebook, until you look at some of its specs. The star attraction is the 13.3-inch AMOLED touchscreen with 4K UHD resolution. Samsung developed the Galaxy Chromebook in close coordination with Intel as part of its ambitious "Project Athena" initiative of developing next-generation portable computing devices that defy conventions on performance and battery-life.

Under the hood is an Intel Core i5-10210U "Comet Lake" processor with 8 GB of LPDDR3-2133 memory, a 256 GB NVMe SSD, UFS + microSDXC card slot, and 802.11ax + Bluetooth connectivity (at this price we'd have expected at least 4G cellular modem). It dumps type-A USB ports and instead features a couple of type-C ports, one of which doubles up as a power input. The 4K UHD display is pulled by integrated Intel UHD 630 graphics. A 47.9 Wh battery powers the thing, with Samsung claiming 8h 20m of run-time. Measuring 30 cm x 20.32 cm x 0.99 cm (closed), the Galaxy Chromebook weighs 1.03 kg. The included S-Pen stylus slots into the body. The Galaxy Chromebook is available in two color options, red and gray, both priced at $999.

Further cementing its position as a leading provider of storage for next-gen mobile devices, KIOXIA America, Inc. (formerly Toshiba Memory America, Inc.), the U.S.-based subsidiary of KIOXIA Corporation, today announced that it has started sampling Universal Flash Storage (UFS) Ver. 3.1 embedded flash memory devices. Well suited for mobile applications requiring high-performance with low power consumption, the new lineup utilizes KIOXIA's cutting-edge BiCS FLASH 3D flash memory and is supported in four capacities: 128 gigabytes (GB), 256 GB, 512 GB, and 1 terabyte (TB).

The new devices integrate BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation, and bad-block management for simplified system development. "KIOXIA was the first company to introduce UFS in 2013[4] and the first to offer UFS Ver. 3.0 last year and we continue to be at the forefront of UFS memory with this Ver. 3.1 announcement today," noted Scott Beekman, director of managed flash memory products for KIOXIA America, Inc. "Our newest offerings enable next-gen mobile devices to take full advantage of the connectivity benefits of 5G, leading to faster downloads and reduced lag time - and an improved user experience."

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of Universal Flash Storage (UFS) version 3.1, JESD220E. In addition, an optional new companion standard, JESD220-3: UFS Host Performance Booster (HPB) Extension, has also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 3.1 introduces new features intended to help maximize device performance while minimizing power usage. Both JESD220E and JESD220-3 are available for download from the JEDEC website.

Korean DRAM and NAND flash giant SK Hynix brought its latest memory innovations to the 2020 International CES. The star attraction at their booth was the "4D NAND" technology, and some of the first client-segment SSDs based on it. As a concept, 4D NAND surfaced way back in August 2018, and no, it doesn't involve the 4th dimension. Traditional 3D NAND chips use charge-trap flash (CTF) stacks spatially located next to a peripheral block that's responsible for wiring out all of those CTF stacks. In 4D NAND, the peripheral block is stacked along with the CTF stack itself, conserving real-estate on the 2-D plane (which can then be spent on increasing density). We caught two 128-layer 4D NAND-based client-segment drives inbound for 2020, the Platinum P31 M.2 NVMe, and Gold P31 M.2 NVMe. The already launched Gold S31 SATA drive was also there.

SK hynix Inc. presents its innovative semiconductor technologies leading the 4th Industrial Revolution at CES 2020, the world's largest trade show for IT and consumer electronics in Las Vegas, USA, from January 7-10, 2020. In line with its "Memory Centric World" theme, SK hynix depicts a futuristic city which effectively utilizes enormous amounts of data. The Company also showcases its semiconductor solutions across six crucial business fields - artificial intelligence (AI), augmented reality (AR) / virtual reality (VR), automotive, Internet of Things (IoT), big data and 5G.

Headlining at CES 2020 are SK hynix's memory solutions including HBM2E, DDR5 for servers, and SSD, which are already highly regarded and widely used in 4th industrial fields such as 5G and AI for their stability, speed, power consumption and density excellence. Other cutting-edge products set to make headlines in January are the Company's highly durable LPDDR4X and eMMC 5.1, which are optimized for automobiles. What's more, SK hynix is displaying its LPDDR5 and UFS that enhance the performance of 5G smartphones as well as CIS (CMOS Image Sensor) which is essential in establishing effective environments for AR/VR and IoT.

The next generation of automotive systems are hungry for more. More advanced infotainment and ADAS1 systems. More storage for event data recording. Support for more 3D mapping. In a move that makes more a reality, KIOXIA America, Inc. (formerly Toshiba Memory America, Inc.), the U.S.-based subsidiary of KIOXIA Corporation, today announced that it has begun sampling the industry's first 512 gigabyte (GB) Automotive Universal Flash Storage (UFS) JEDEC Version 2.1 embedded memory solution. KIOXIA America's Automotive UFS supports a wide temperature range (-40°C to +105°C), meets AEC-Q100 Grade 2 requirements and offers the extended reliability required by various automotive applications. The 512 GB device joins the company's existing lineup of Automotive UFS, which includes capacities of 16 GB, 32 GB, 64 GB, 128 GB, and 256 GB.

Innovations such as autonomous vehicles, more advanced infotainment systems, digital clusters, telematics, and ADAS provide not only an elevated driver experience but also a greater demand for storage within vehicles.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 for next-generation mobile devices. In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1), allowing mobile memory to support seamless user experiences in future smartphones with ultra-large high-resolution screens.

"Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "As we expand our eUFS 3.0 offerings, including a 1-Terabyte (TB) version later this year, we expect to play a major role in accelerating momentum within the premium mobile market."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first one-terabyte (TB) embedded Universal Flash Storage (eUFS) 2.1, for use in next-generation mobile applications. Just four years after introducing the first UFS solution, the 128-gigabyte (GB) eUFS, Samsung has passed the much-anticipated terabyte threshold in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to a premium notebook PC, without having to pair their phones with additional memory cards.

"The 1 TB eUFS is expected to play a critical role in bringing a more notebook-like user experience to the next generation of mobile devices," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "What's more, Samsung is committed to assuring the most reliable supply chain and adequate production quantities to support the timely launches of upcoming flagship smartphones in accelerating growth of the global mobile market."

Toshiba Memory Corporation, the world leader in memory solutions, has started sampling[1] the industry's first Universal Flash Storage (UFS) Ver. 3.0 embedded flash memory devices. The new line-up utilizes the company's cutting-edge, 96-layer BiCS FLASH 3D flash memory and is available in three capacities: 128GB, 256GB and 512GB. With high-speed read/write performance and low power consumption, the new devices are suitable for applications such as mobile devices, smartphones, tablets, and augmented/virtual reality systems.

The new devices integrate 96-layer BiCS FLASH 3D flash memory and a controller in a JEDEC-standard 11.5 x 13.0 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management for simplified system development.

Western Digital Corp. today expanded its portfolio of data storage devices purpose-built for the modern surveillance market, introducing three new offerings: the industry's first industrial-grade 3D NAND UFS embedded flash drive (EFD) for surveillance; an expanded WD Purple microSD card series to support up to 256 GB capacity; and Western Digital Device Analytics, the new device analytics technology enabling OEMs and system integrators to proactively manage their storage subsystems and maintain optimal operation.

The new devices and tools address the complex and dynamic data demands of a surveillance market in transformation, supporting the high performance, capacity and endurance required by networked and artificial intelligence (AI)-enabled camera systems, as well as other smart video devices operating at the edge.

"As the adoption of higher resolution and AI-enabled cameras expands, and traditional centralized surveillance video systems become more distributed, fast and reliable storage with higher capacities are essential for enabling surveillance devices to capture, analyze and transform greater amounts of data, locally, and in real-time," said Oded Sagee, senior director, product marketing, Western Digital. "With the new devices and analytics capability introduced today, we are excited to enable the new era of smart video and AI-driven surveillance systems with the industry's most comprehensive offering for surveillance, from the edge to the core."

TDK Corporation announces the sequential launch of the embedded SD ESRD4 series, the embedded SSD ESS1B series and the M.2 SSD Type 2280-D5-B-M SNS1B series. With the progress of IoT, the demand for micro storage for edge data is rapidly expanding. In particular, eMMC, which can be mounted on a surface, was expected to be potent, but the trend is shifting from eMMC to UFS, which is associated with the larger capacity of smartphones.

On the other hand, a reliable and appropriate storage capacity is required for I-IoT that usually uses a small capacity. TDK's embedded SD ESRD4 series is a SD card, equipped with a highly durable SLC/pSLC NAND flash that can be implemented on boards. It covers a wide range of capacities from 1GB to 32GB, suitable for storing a lightweight system such as Linux and RTOS.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of Universal Flash Storage (UFS) version 3.0, JESD220D. In addition, new updates to related standards, JESD223D UFSHCI and JESD220-2A UFS Card Extension, have also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 3.0 is the first standard to introduce MIPI M-PHY HS-Gear4, with a data rate of up to 11.6 Gbps per lane, a 2x performance increase over prior versions of the specification. UFS 3.0 includes two features introduced specifically for the automotive market: the ability to function at an extended temperature range and refresh operation. JESD220D, JESD223D and JESD220-2A are available for download from the JEDEC website.

UFS is a high-performance interface designed for use in applications where power consumption needs to be minimized, including mobile systems such as smart phones and tablets as well as automotive applications. Its high-speed serial interface and optimized protocol enable significant improvements in throughput and system performance.

To achieve the highest performance and most power efficient data transport, JEDEC UFS leverages industry leading specifications from the MIPI Alliance to form its Interconnect Layer. This collaboration continues with UFS version 3.0, which references the MIPI M-PHY v4.1 physical layer specification and the recently released MIPI UniProSM v1.8 transport layer specification.

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun shipping samples of embedded NAND flash memory products for automotive applications that are compliant with JEDEC UFS version 2.1. The new products meet AEC-Q100 Grade2 requirements and support a wide temperature range of -40°C to +105°C, offering the enhanced reliability capabilities that are required by increasingly complex automotive applications. The line-up meets a broad range of applications requirements with five different capacities: 16 GB, 32 GB, 64 GB, 128 GB and 256 GB.

The new products are embedded NAND flash memory products that integrate NAND chips fabricated with 15 nm process technology and a controller in a single package. Storage requirements for automotive applications continue to increase as systems including automotive information & entertainment systems and ADAS become more sophisticated, and UFS supports their high performance and density needs. The addition of automotive UFS expands Toshiba Memory Corporation's line-up of embedded NAND flash memory products for automotive applications, which currently includes automotive e-MMC products. Utilizing the UFS interface allows the new products to achieve sequential read of 850 MB/s and random read of 50,000 IOPS, which are approximately 2.7 times and 7.1 times faster than their current e-MMC counterparts, respectively.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung's latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.

"The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards," said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world."

Western Digital today introduced a new portfolio of advanced iNAND embedded flash drives (EFDs) to empower smartphone users to unlock the full potential of today's data-driven applications and experiences. Leveraging Western Digital's 64-layer 3D NAND technology and advanced UFS and e.MMC interface technologies, the intelligent, new iNAND 8521 and iNAND 7550 EFDs deliver outstanding data performance and high storage capacity.

When designed into smartphones and thin, lightweight computing devices, they accelerate the possibilities of a wide range of demanding data-centric applications, including augmented reality (AR), high resolution video capture and rich social media experiences, as well as emerging artificial intelligence (AI) and Internet of Things (IoT) experiences at the "edge." The volume, velocity, variety and value of data continues to exponentially grow and evolve across Big Data, Fast Data and personal data. Many consumers around the world will experience this confluence of data on their smartphone.

Toshiba Memory Corporation, the world leader in memory solutions, has today started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32 GB, 64 GB, 128 GB and 256 GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is introducing the industry's first embedded Universal Flash Storage (eUFS) solution for use in next-generation automotive applications. Consisting of 128-gigabyte (GB) and 64GB versions, the new eUFS solution has been designed for advanced driver-assistance systems (ADAS), next-generation dashboards and infotainment systems that provide comprehensive connected features for drivers and passengers worldwide.

"We are taking a major step in accelerating the introduction of next-generation ADAS and automotive infotainment systems by offering the industry's first eUFS solution for the market much earlier than expected," said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. "Samsung is taking the lead in the growth of the memory market for sophisticated automotive applications, while continuing to deliver leading-edge UFS solutions with higher performance, density and reliability."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun volume production of 64-layer, 256Gb V-NAND flash memory for use with an expanding line-up of storage solutions for server, PC and mobile applications. Since Samsung began producing the industry's first SSD based on 64-layer 256Gb V-NAND chips in January for key IT customers, it has been working on a wide range of new V-NAND-based mobile and consumer storage solutions. These include embedded UFS memory, branded SSDs and external memory cards, which the company plans to introduce later this year.

To solidify its competitive edge in the memory market, Samsung intends for its volume production of the 64-layer V-NAND chip, which is widely referred to as 4th generation V-NAND, to cover more than 50 percent of its monthly NAND flash production by year end. "Following a long commitment to innovative technology, we will continuously push the limits of generations of industry-first V-NAND production, in moving the industry closer to the advent of the terabit V-NAND era," said Kye Hyun Kyung, Executive Vice President of the Flash Product and Technology team, Memory Business at Samsung Electronics. "We will keep developing next-generation V-NAND products in sync with the global IT industry so that we can contribute to the timeliest launches of new systems and services, in bringing a higher level of satisfaction to consumers."

Toshiba America Electronic Components, Inc. (TAEC) has enhanced its lineup of managed NAND devices with the addition of new Embedded Multimedia Card (e-MMC) and Universal Flash Storage (UFS) embedded memory solutions. Featuring enhanced integrated controller technologies, the new 'Supreme+' e-MMC (JEDEC ver. 5.1) and UFS (JEDEC ver. 2.1) offerings deliver significant read and write speed improvements to demanding applications.

In contrast to raw NAND flash memory solutions, e-MMC and UFS devices integrate NAND flash memory and a controller chip in a single package. This saves space and relieves host processors of the burden of key memory management functions including bad block management, error correction, wear leveling, and garbage collection. As a result, e-MMC and UFS devices simplify design when compared to standalone memory ICs with a standard NAND flash interface.