Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun shipping samples of embedded NAND flash memory products for automotive applications that are compliant with JEDEC UFS version 2.1. The new products meet AEC-Q100 Grade2 requirements and support a wide temperature range of -40°C to +105°C, offering the enhanced reliability capabilities that are required by increasingly complex automotive applications. The line-up meets a broad range of applications requirements with five different capacities: 16 GB, 32 GB, 64 GB, 128 GB and 256 GB.

The new products are embedded NAND flash memory products that integrate NAND chips fabricated with 15 nm process technology and a controller in a single package. Storage requirements for automotive applications continue to increase as systems including automotive information & entertainment systems and ADAS become more sophisticated, and UFS supports their high performance and density needs. The addition of automotive UFS expands Toshiba Memory Corporation's line-up of embedded NAND flash memory products for automotive applications, which currently includes automotive e-MMC products. Utilizing the UFS interface allows the new products to achieve sequential read of 850 MB/s and random read of 50,000 IOPS, which are approximately 2.7 times and 7.1 times faster than their current e-MMC counterparts, respectively.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of the industry's first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution for use in next-generation mobile devices. Utilizing Samsung's latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB eUFS package provides unparalleled storage capacity and outstanding performance for upcoming flagship smartphones and tablets.

"The new Samsung 512GB eUFS provides the best embedded storage solution for next-generation premium smartphones by overcoming potential limitations in system performance that can occur with the use of micro SD cards," said Jaesoo Han, executive vice president of Memory Sales & Marketing at Samsung Electronics. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world."

Western Digital today introduced a new portfolio of advanced iNAND embedded flash drives (EFDs) to empower smartphone users to unlock the full potential of today's data-driven applications and experiences. Leveraging Western Digital's 64-layer 3D NAND technology and advanced UFS and e.MMC interface technologies, the intelligent, new iNAND 8521 and iNAND 7550 EFDs deliver outstanding data performance and high storage capacity.

When designed into smartphones and thin, lightweight computing devices, they accelerate the possibilities of a wide range of demanding data-centric applications, including augmented reality (AR), high resolution video capture and rich social media experiences, as well as emerging artificial intelligence (AI) and Internet of Things (IoT) experiences at the "edge." The volume, velocity, variety and value of data continues to exponentially grow and evolve across Big Data, Fast Data and personal data. Many consumers around the world will experience this confluence of data on their smartphone.

Toshiba Memory Corporation, the world leader in memory solutions, has today started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32 GB, 64 GB, 128 GB and 256 GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is introducing the industry's first embedded Universal Flash Storage (eUFS) solution for use in next-generation automotive applications. Consisting of 128-gigabyte (GB) and 64GB versions, the new eUFS solution has been designed for advanced driver-assistance systems (ADAS), next-generation dashboards and infotainment systems that provide comprehensive connected features for drivers and passengers worldwide.

"We are taking a major step in accelerating the introduction of next-generation ADAS and automotive infotainment systems by offering the industry's first eUFS solution for the market much earlier than expected," said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. "Samsung is taking the lead in the growth of the memory market for sophisticated automotive applications, while continuing to deliver leading-edge UFS solutions with higher performance, density and reliability."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun volume production of 64-layer, 256Gb V-NAND flash memory for use with an expanding line-up of storage solutions for server, PC and mobile applications. Since Samsung began producing the industry's first SSD based on 64-layer 256Gb V-NAND chips in January for key IT customers, it has been working on a wide range of new V-NAND-based mobile and consumer storage solutions. These include embedded UFS memory, branded SSDs and external memory cards, which the company plans to introduce later this year.

To solidify its competitive edge in the memory market, Samsung intends for its volume production of the 64-layer V-NAND chip, which is widely referred to as 4th generation V-NAND, to cover more than 50 percent of its monthly NAND flash production by year end. "Following a long commitment to innovative technology, we will continuously push the limits of generations of industry-first V-NAND production, in moving the industry closer to the advent of the terabit V-NAND era," said Kye Hyun Kyung, Executive Vice President of the Flash Product and Technology team, Memory Business at Samsung Electronics. "We will keep developing next-generation V-NAND products in sync with the global IT industry so that we can contribute to the timeliest launches of new systems and services, in bringing a higher level of satisfaction to consumers."

Toshiba America Electronic Components, Inc. (TAEC) has enhanced its lineup of managed NAND devices with the addition of new Embedded Multimedia Card (e-MMC) and Universal Flash Storage (UFS) embedded memory solutions. Featuring enhanced integrated controller technologies, the new 'Supreme+' e-MMC (JEDEC ver. 5.1) and UFS (JEDEC ver. 2.1) offerings deliver significant read and write speed improvements to demanding applications.

In contrast to raw NAND flash memory solutions, e-MMC and UFS devices integrate NAND flash memory and a controller chip in a single package. This saves space and relieves host processors of the burden of key memory management functions including bad block management, error correction, wear leveling, and garbage collection. As a result, e-MMC and UFS devices simplify design when compared to standalone memory ICs with a standard NAND flash interface.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today unveiled the industry's first removable memory cards based on the JEDEC Universal Flash Storage (UFS) 1.0 Card Extension Standard*, for use in high-resolution mobile shooting devices such as DSLRs, 3D VR cameras, action cams and drones. Coming in a wide range of storage capacities including 256, 128, 64 and 32 gigabyte (GB), Samsung's UFS cards are expected to bring a significant performance boost to the external memory storage market, allowing much more satisfying multimedia experiences.

"Our new 256GB UFS card will provide an ideal user experience for digitally-minded consumers and lead the industry in establishing the most competitive memory card solution," said Jung-bae Lee, senior vice president, Memory Product Planning & Application Engineering, Samsung Electronics "By launching our new high-capacity, high-performance UFS card line-up, we are changing the growth paradigm of the memory card market to prioritize performance and user convenience above all."

Micron Technology, Inc., (Nasdaq:MU) today introduced the company's first 3D NAND memory technology optimized for mobile devices and its first products based on the Universal Flash Storage (UFS) 2.1 standard. Micron's initial mobile 3D NAND-based 32GB solution is targeted specifically for the high and mid-end smartphone segments which make up approximately 50 percent of worldwide smartphone volume[1]. As mobile devices bypass personal computers as consumers' primary computing device, user behaviors heavily impact the device's mobile memory and storage requirements. Micron's mobile 3D NAND addresses these concerns, enabling an unparalleled user experience that includes seamless high definition video streaming, higher bandwidth gameplay, faster boot up times, camera performance and file loading.

"Micron continues to advance NAND technology with our introduction of 3D NAND and UFS products for the mobile segment," said Mike Rayfield, vice president of Micron's mobile business unit. "The improved performance, higher capacity and enhanced reliability of 3D NAND will help our customers meet the ever-growing demand for mobile storage and will enable much more exciting end user experiences."

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of several key updates to the Universal Flash Storage (UFS) family of standards. These include JESD220C UFS version 2.1, JESD223C UFSHCI version 2.1, JESD220-1A UFS UME version 1.1 and JESD223-1A UFSHCI UME version 1.1.

Developed for mobile applications and computing systems requiring high performance with low power consumption, the new UFS updates offer key improvements over earlier versions which will provide data security through the use of inline cryptography between the SoC and UFS Storage device. All four updated standards are available for free download from the JEDEC website.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220-2 Universal Flash Storage (UFS) Card Extension Standard. The new removable memory card standard standardizes functionality that aligns with the popular UFS embedded device standard. JESD220-2 is available for free download from the JEDEC website.

UFS is a high performance interface designed for use in computing and mobile systems such as smart phones and tablets where power consumption needs to be minimized. Its high speed serial interface and optimized protocol enable significant improvements in throughput and mobile system performance. The new UFS card standard provides a leading-edge removable storage solution while maintaining sequential and random IOPS performance that is critical for future mobile markets. Even using a single lane the UFS 1.0 card offers 600 MB/s interface speed in both directions and a state-of-the-art queuing mechanism to further increase system throughput.

SK Hynix Inc. announced it has developed UFS (Universal Flash Storage) 2.0 64 GB (Gigabytes) solution based on its own 16 nm NAND Flash and in-house firmware and controller. This UFS 2.0 represents a groundbreaking leap in performance by enabling High-Speed Gear 3 interface with dual data lanes.

UFS 2.0 is the next generation of embedded flash memory to eMMC for mobile IT gadgets which drives a remarkable boost in reading/writing speed at low power and supports high density. The Company's UFS 2.0 operates at 780 MB/s(Megabytes per second) and 160 MB/s of sequential read/write speed and runs random read/write speed at 32,000 IOPS and 17,000 IOPS. As a result, it works three times faster in read speed than eMMC 5.1.

In addition, this UFS 2.0 utilizes 'Command Queue' technology used in SSD solutions to handle read and write commands simultaneously to achieve data operation efficiency by preventing buffering load in multi-tasking and ordering priorities of data works. To maximize prioritized command processing feature of UFS standard, the device employs 'Multi-Thread' read processing internally to ensure that high priority command is serviced first irrespective of other outstanding tasks, delivering fast response to time-critical host requests for best user experience. In consequence, it realizes even better performance in speed and power consumption over eMMC.