Samsung to Detail SF4X Process for High-Performance Chips
Samsung has invested heavily in semiconductor manufacturing technology to provide clients with a viable alternative to TSMC and its portfolio of nodes spanning anything from mobile to high-performance computing (HPC) applications. Today, we have information that Samsung will present its SF4X node to the public in this year's VLSI Symposium. Previously known as a 4HPC node, it is designed as a 4 nm-class node with a specialized use case for HPC processors, in contrast to the standard SF4 (4LPP) node that uses 4 nm transistors designed for low-power standards applicable to mobile/laptop space. According to the VLSI Symposium schedule, Samsung is set to present more info about the paper titled "Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells."
As the brief introduction notes, "In this paper, the most upgraded 4nm (SF4X) ensuring HPC application was successfully demonstrated. Key features are (1) Significant performance +10% boosting with Power -23% reduction via advanced SD stress engineering, Transistor level DTCO (T-DTCO) and [middle-of-line] MOL scheme, (2) New HPC options: Ultra-Low-Vt device (ULVT), high speed SRAM and high Vdd operation guarantee with a newly developed MOL scheme. SF4X enhancement has been proved by a product to bring CPU Vmin reduction -60mV / IDDQ -10% variation reduction together with improved SRAM process margin. Moreover, to secure high Vdd operation, Contact-Gate breakdown voltage is improved by >1V without Performance degradation. This SF4X technology provides a tremendous performance benefits for various applications in a wide operation range." While we have no information on the reference for these claims, we suspect it is likely the regular SF4 node. More performance figures and an in-depth look will be available on Thursday, June 15, at Technology Session 16 at the symposium.
As the brief introduction notes, "In this paper, the most upgraded 4nm (SF4X) ensuring HPC application was successfully demonstrated. Key features are (1) Significant performance +10% boosting with Power -23% reduction via advanced SD stress engineering, Transistor level DTCO (T-DTCO) and [middle-of-line] MOL scheme, (2) New HPC options: Ultra-Low-Vt device (ULVT), high speed SRAM and high Vdd operation guarantee with a newly developed MOL scheme. SF4X enhancement has been proved by a product to bring CPU Vmin reduction -60mV / IDDQ -10% variation reduction together with improved SRAM process margin. Moreover, to secure high Vdd operation, Contact-Gate breakdown voltage is improved by >1V without Performance degradation. This SF4X technology provides a tremendous performance benefits for various applications in a wide operation range." While we have no information on the reference for these claims, we suspect it is likely the regular SF4 node. More performance figures and an in-depth look will be available on Thursday, June 15, at Technology Session 16 at the symposium.