Samsung is ready with a 32 GB DDR4 UDIMM (unbuffered DIMMs) targeted at desktops. Dual-channel kits with these modules could let you max out the 64 GB memory limit of today's mainstream desktop processors, and 128 GB limits of Intel's Core X HEDT processors, with quad-channel kits. AMD's Ryzen Threadripper processors are advertised to support up to 2 TB of memory (including ECC support), so it should finally be possible to pack up to 256 GB of memory on Threadripper-powered machines.

The new M378A4G43MB1-CTD DDR4 UDIMM from Samsung is, unsurprisingly, a dual-rank module (x8 / x16 Organization or up to 2 ranks per DIMM and 2DPC configuration). It ticks at DDR4-2666 at a module voltage of 1.2 V. The module itself won't be much to look at, with a green PCB and bare-naked DRAM chips. It is is currently sampling to PC OEMs. It could also be possible for more popular memory manufacturers to get in touch with Samsung for the DRAM chips that make up this module. A single-rank variant of this module could finally make it possible for AMD Ryzen AM4 machines to have 32 GB of dual-channel memory at acceptably high memory clocks.

Intel was once the shining star in the semiconductor manufacturing industry, with a perfectly integrated, vertical product design and manufacturing scheme. Intel was one of the few companies in the world to be able to both develop its architectures and gear their manufacturing facilities to their design characteristics, ensuring a perfect marriage of design and manufacturing. However, not all is rosy on that field, as we've seen; AMD itself also was a fully integrated company, but decided to spin-off its manufacturing arm so as to survive - thus creating GLOBALFOUNDRIES.But Intel was seen as many as the leader in semiconductor manufacturing, always at the cutting edge of - well - Moore's Law, named after Intel's founding father Gordon Moore. Now, Mehdi Hosseini, an analyst with Susquehanna, has gone on to say that the blue giant has effectively lost its semiconductor leadership. And it has, in a way, even if its 10 nm (which is in development hell, so to speak) is technically more advanced than some 7 nm implementations waiting to be delivered to market by its competitors. However, there's one area where Intel will stop being able to claim leadership: manufacturing techniques involving EUV (Extreme UltraViolet).

Even as we achieve consumerism in scales hitherto unseen, tech companies always want to sell more - there's "always" increased production, there must always be increased, projected demand from customers. However, when demand isn't there, and growth slows down or even stagnates, production takes its time to adjust - and already manufactured products have few opportunities other than going on towards a swelling inventory.

This is what is happening with a myriad of tech companies, such as Apple, Samsung, Xiaomi, Intel, Hon Hai (Foxconn), among others. We could even take a page from our own PC industry and look at NVIDIA's Pascal inventory that is in need of clearing up - and which has resulted in bottoming prices of previous-gen cards as we look towards the new RTX 20-series. Which, coincidentally, have been launched with increased pricing over the previous generation. Perhaps another way of moving old inventory?

Samsung Electronics America, Inc. today unveiled the Samsung Data Center solid-state drive (SSD) lineup to address current and future trends in high performance computing storage in the big data era for small and medium businesses (SMBs). Samsung's new family of Data Center SSD solutions, which consists of the 860 DCT, 883 DCT, 983 DCT and the 983 ZET, are engineered to meet the evolving needs of SMBs, including faster, sustained performance, higher capacities and enterprise-class reliability and security.

Samsung's Data Center SSD portfolio will raise the bar for efficiency compared to legacy storage systems, requiring fewer servers and reduced power and cooling for a lower total cost of ownership (TCO). The new lineup delivers better Quality of Service (QoS) for SMBs by reducing latency and lowering data delays. The entire line provides enhanced reliability and endurance for 24/7 operation backed by a 5-year limited warranty and impressive Drive Writes Per Day (DWPD) ratings.

Samsung Electronics today unveiled its first NVMe-based portable solid state drive (SSD) - the Samsung Portable SSD X5 - achieving new levels of performance and reliability for external storage solutions. Based on the cutting-edge Thunderbolt 3 technology, the new X5 features exceptional speeds in a compact and durable form factor, making it an ideal portable storage for content creators and IT professionals on the go.

"As a leader in high-performance and reliable storage solutions, we are thrilled to continue to advance the external SSD market with the introduction of our first Thunderbolt 3 portable SSD," said Dr. Mike Mang, vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "The X5 is yet another testament to Samsung's commitment to providing innovative portable storage solutions that enable faster transfer of large data files, saving users' valuable time."

Samsung Electronics has expanded its ground-breaking curved display line-up upon the global launch of the new CJ79 (Model name: C34J791) monitor. The CJ79 34-inch curved monitor is the first of its kind to feature Intel's Thunderbolt 3 connectivity.

Compatible with Macs and PCs, the CJ79 features two Thunderbolt 3 ports that transmit display, data and power at a superhero processing speed of up to 40 Gigabits per second (Gpbs), eight times faster than USB 3.0, and simultaneously charges devices up to 85 watts(W), all through a single cable.

Samsung Electronics unveiled its new CJG5 curved gaming monitor at Gamescom 2018, held from August 21 to 25. Samsung is exhibiting its advanced gaming monitor line-up equipped with super ultra-wide CHG90 experience zone under the theme, "Wider View. Winning Play." Held in Cologne, Germany, Gamescom is one of the world's largest gaming trade shows that attracted more than 350 thousand visitors from more than 50 countries, last year alone.

The newly-developed CJG5 32-inch(C32JG5) and 27-inch(C27JG5) monitors feature key gaming technologies such as WQHD high resolution, curved display, 144Hz refresh rate and a high contrast ratio. Globally available in the third quarter of 2018, the bezel-less, game-optimized CJG5 provides a completely smooth and immersive gaming experience at a reasonable and affordable price backed by Samsung's technology expertise.

Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today announced that its 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) memory is being used in NVIDIA's new Turing architecture-based Quadro RTX GPUs.

Thanks to Samsung's industry-leading 16Gb GDDR6 memory, end users can expect improved performance and energy efficiency in the widest array of graphics-intensive applications, including computer-aided design (CAD), digital content creation (DCC) and scientific visualization applications. Samsung's 16Gb GDDR6 can also be used in rapidly growing fields such as 8K Ultra HD video processing, virtual reality (VR), augmented reality (AR) and artificial intelligence (AI).

Toshiba at the Flash Memory Summit announced that it's developing 3D XL-Flash technology - an approach towards the creation of low-latency, 3D NAND that can take on the surging Optane and 3D XPoint memory technologies. Toshiba says the new approach to low-latency NAND could bring latency values down to just 1/10 of current consumer, TLC NAND pricing.

The bet here is on economies of scale - a revised NAND architecture and deployment will still be able to take advantage of the huge fabrication capacity that Toshiba already enjoys (and Samsung, with its Z-NAND, similar in purpose to what Toshiba want to do with XL-Flash), thus avoiding the need for technology and production ramp-up that brought Optane's pricing up. Toshiba will be using its BiCS flash technology, but XL-Flash will be - at least at first - deployed in SLC implementations, so as to improve performance (7 microseconds program time against QLC's 30 microsecond). Of course, this will bring storage density down, but remember the target here is offering Optane-like performance and equal or better density at lower pricing.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 4-bit (QLC, quad-level cell) 4-terabyte (TB) SATA solid-state drive (SSD) for consumers.

Based on 1-terabit (Tb) V-NAND with outstanding performance equivalent to the company's 3-bit design, Samsung's QLC SSD is expected to bring a new level of efficiency to consumer SSDs.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 2nd-generation of 10-nanometer-class (1y-nm), LPDDR4X (Low Power, Double Data Rate, 4X) DRAM to improve the efficiency and lower the battery drain of today's premium smartphones and other mobile applications. Compared to the mobile DRAM memory chips most used in current flagship mobile devices (1x-nm 16Gb LPDDR4X), the 2nd- generation LPDDR4X DRAM features up to a 10 percent power reduction while maintaining the same data rate of 4,266 megabits per second (Mb/s).

"The advent of 10nm-class mobile DRAM will enable significantly enhanced solutions for next-generation, flagship mobile devices that should first hit the market late this year or the first part of 2019." said Sewon Chun, senior vice president of Memory Sales & Marketing at Samsung Electronics. "We will continue to grow our premium DRAM lineup to lead the 'high-performance, high capacity, and low power' memory segment to meet the market demand and strengthen our business competitiveness."

Samsung is reportedly looking to increase its investment in the NAND space with a $2.6 billion increase to its annual NAND budget. The increase, which will bring the company's investment up to $9 billion, aims to increase production volume in what is building up to be the actual technology of choice for key players in the storage market.

Remember that for all the investment in increasing density and declining price per GB of competing mechanical solutions, we've just had notice of an HDD fabrication plant that's shutting down. Most of the funding will reportedly go into increasing production volume of 3D NAND memory. Should demand stay relatively stable, the (eventual) additional influx of memory chips to the market should help drive costs even lower - provided there's no funny business in price setting, of course.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has successfully developed the industry's first 10-nanometer (nm) class* 8-gigabit (Gb) LPDDR5 DRAM. Since bringing the first 8Gb LPDDR4 to mass production in 2014, Samsung has been setting the stage to transition to the LPDDR5 standard for use in upcoming 5G and Artificial Intelligence (AI)-powered mobile applications.

The newly-developed 8Gb LPDDR5 is the latest addition to Samsung's premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February).

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. In the industry's first use of the 'Toggle DDR 4.0' interface, the speed for transmitting data between storage and memory over Samsung's new 256-gigabit (Gb) V-NAND has reached 1.4-gigabits per second (Gbps), a 40-percent increase from its 64-layer predecessor.

The energy efficiency of Samsung's new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. The new V-NAND also has the fastest data write speed to date at 500-microseconds (μs), which represents about a 30-percent improvement over the write speed of the previous generation, while the response time to read-signals has been significantly reduced to 50μs.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that its strategic foundry collaboration with Arm will be expanded to 7/5-nanometer (nm) FinFET process technology to remain a step ahead in the era of high-performance computing. Based on Samsung Foundry's 7LPP (7nm Low Power Plus) and 5LPE (5nm Low Power Early) process technologies, the Arm Artisan physical IP platform will enable 3GHz+ computing performance for Arm's Cortex -A76 processor.

Samsung's 7LPP process technology will be ready for its initial production in the second half of 2018. The first extreme ultra violet (EUV) lithography process technology, and its key IPs, are in development and expected to be completed by the first half of 2019. Samsung's 5LPE technology will allow greater area scaling and ultra-low power benefits due to the latest innovations in 7LPP process technology.

Samsung Electronics, the world leader in advanced memory technology, today announced that it is being recognized for its environmental reliability by receiving the industry's first Environmental Product Declaration (EPD) certificate in Korea with its 512Gb 64-layer 3bit V-NAND and 860 EVO 4TB SSD.

The Environmental Product Declaration is a national certification system in Korea which recognizes a product's performance according to seven key environmental metrics including carbon footprint, resource footprint, ozone depletion, acidification, eutrophication, photochemical smog, and water footprint.

Samsung has reportedly doubled its manufacturing output of HBM2 (high-bandwidth memory 2) stacks. Despite this, the company may still fall short of the demand for HBM2, according to HPC expert Glenn K Lockwood, Tweeting from the ISC 2018, the annual HPC industry event held between 24th to 28th June in Frankfurt, where Samsung was talking about its 2nd generation "Aquabolt" HBM2 memory, which is up to 8 times faster than GDDR5, with up to 307 GB/s bandwidth from a single stack.

While HBM2 is uncommon on consumer graphics cards (barring AMD's flagship Radeon RX Vega series, and NVIDIA's TITAN V), the memory type is in high demand with HPC accelerators that are mostly GPU-based, such as AMD Radeon Instinct series, and NVIDIA Tesla. The HPC industry itself is riding the gold-rush of AI research based on deep-learning and neural-nets. FPGAs, chips that you can purpose-build for your applications, are the other class of devices soaking up HBM2 inventories. The result of high demand, coupled with high DRAM prices could mean HBM2 could still be too expensive for mainstream client applications.

Realtek, known more for its cheap Ethernet PHYs and audio CODECs, entered the SSD controller market in 2017, with mainstream SSD controllers. This year, the company plans to take on giants such as Silicon Motion, Phison, Intel, and Samsung, with its own high-performance controller, the RTS5762. The PCI-Express 3.0 x4 interface provides 4,000 MB/s of raw bandwidth per direction, and while it's technically impossible for any device to transfer its payload data at that speed (on account of various protocol overheads), very few PCI-Express 3.0 x4 SSDs get within 80th percentile of it (3200 MB/s per direction transfers). It's only recently that 3400 MB/s became the gold-standard of high-end M.2 NVMe SSDs, but Realtek plans to change that.

The RTS5762 is capable of up to 3,500 MB/s reads, or 87.5% saturation of the PCI-Experss 3.0 x4 bus. It supports up to 8 NAND flash channels, 3D TLC and 3D QLC NAND flash memory, and takes advantage of the newer NVMe 1.3 protocol. The only other controller right now that's capable of 3,500 MB/s reads is Samsung "Phoenix," found exclusively on the 970 Pro series (and no other brand's products). Sequential write performance is where this Realtek chip edges past Samsung, with the company showing CDM performance of up to 3,000 MB/s writes, whereas the 970 Pro is only specified to write up to 2,700 MB/s. Realtek also beefed up its mainstream NVMe controller portfolio with the new RTS5763DL. If drives based on this chip are priced right, it could carve out a new market segment between cheaper PCIe 3.0 x2 drives, and "upper mainstream" x4 drives such as the Samsung 970 EVO. Armed with just 4 NAND flash channels and no DRAM to cushion it, the RTS5763DL reads at up to 2150 MB/s, and writes at up to 1475 MB/s (as tested on CDM), making it faster than PCIe 3.0 x2 drives, at least in the sequential reads test.

China's Anti-Monopoly Bureau of Ministry of Commerce visited Samsung Electronics, SK Hynix, and Micron Technology last year to express its concerns over the high prices of DRAM. Unfortunately, these meetings yielded no results as DRAM prices continued to skyrocket in the first quarter of this year. With their patience exhausted, Chinese antitrust regulators finally launched an investigation into Samsung, Micron, and Hynix, which collectively owns 90% of the global DRAM pie. The three DRAM vendors are allegedly cooperating with the Chinese authorities to shed some light into the whole DRAM price fixing matter. If found guilty, they could face fines between $800 million to $8 billion. The estimated fines were calculated based on the companies' DRAM sales in China between 2016 and 2017.

Whether you believe in coincidence or not, Samsung, Micron, and Hynix have a long history of being partners in crime. The trio, along with Infineon and Elpida Memory, conspired to fix prices on DRAM in the United States from April 1999 and June 2002. Infineon pleaded guilty in 2004 and was fined $160 million. Hynix cracked shortly afterwards and paid $185 million in fines. Elpida got off the hook easy with a $84 million fine, while Samsung took the biggest hit paying up to $300 million. Curiously, Infineon called it quits shortly after the incident, and Micron later acquired Elpida. In other news, China aims to become self-sufficient in the IC department by supporting local manufacturers like Yangtze Memory Technologies (YMTC).

Samsung Electronics, the world leader in advanced memory technology, today announced that it has launched the industry's highest capacity NVMe solid state drive (SSD) based on the incredibly small Next-generation Small Form Factor (NGSFF) - an eight-terabyte (TB) NF1 SSD. The new 8TB NVMe NF1 SSD has been optimized for data-intensive analytics and virtualization applications in next-generation data centers and enterprise server systems.

"By introducing the first NF1 NVMe SSD, Samsung is taking the investment efficiency in data centers to new heights," said Sewon Chun, senior vice president of Memory Marketing at Samsung Electronics. "We will continue to lead the trend toward enabling ultra-high density data centers and enterprise systems by delivering storage solutions with unparalleled performance and density levels."

Digitimes reports that Korean memory manufacturers Hynix and Samsung have both been hit by unstable yield rates for their 18 nm server DRAM production.

While the yields are claimed to be sufficient for notebook and desktop PC production, they are not good enough for server memory, which has higher quality requirements. Due to the shortage, Chinese enterprises like Alibaba, Huawei, Lenovo and Tencent are now switching to use 20 nanometer DRAM for their servers, which is in better supply. Other vendors have even requested that no more 18 nm chips are shipped by these Korean suppliers, in a bid to improve quality, which might take several months, but shouldn't have a significant impact on overall DRAM prices.

Bloomberg is reporting that Samsung was hit with a $400 million fine last Friday, (ahem) courtesy of a Texas federal jury. The source of the patent infringement relates to FinFET-specific technology that is being said was "illegally, and willfully taken" from the licensing arm of Korea Advanced Institute of Science and Technology (KAIST), the South Korean university. If you're wondering why was such a case between two South Korean institutions settled in Texas, well - KAIST IP US, the university's licensing arm is strangely (or not) based in the Dallas suburb of Frisco, Texas, - a venue considered "particularly friendly" to patent owners.

The $400 million is just the initial sum; since Samsung's mishandling of the intellectual property (usage without payment) was found to be "willful", the company could be faced with up to three times those charges. Bloomberg's report says that KAIST claimed in its initial complaint that Samsung was dismissive of the FinFet research at first, believing it would be a fad. Apparently, that all changed when rival Intel Corp. started licensing the invention and developing its own products, according to KAIST IP. Samsung, naturally, disagrees: the company that it helped the university develop the technology in the first place, and that it was "disappointed by the verdict", and "will consider options to obtain an outcome that is reasonable, including an appeal."

Job postings on LinkedIn reveal that Samsung is looking to hire a ton of graphics chip engineers to bring forward their own GPU design. In the past the company has licensed GPU IP from companies like ARM and Imagination Technologies, but these designs come with cost, low performance and low flexibility. With Samsung needing graphics IP for a large range of products like phones, tablets and exploring options in markets like automotive, machine learning and AI, it's not surprising that the company is now looking into rolling their own GPU - from scratch as indicated by a recruiter's posting:

"This is Samsung's proprietary IP. We will define the ISA, the architecture, the SW, the entire solution."

Samsung Electronics America, Inc., announced the Samsung Chromebook Plus (V2), a 2-in-1 convertible designed to help people get the most out of Chrome OS wherever life and work take them. Available at Best Buy starting June 24, the Samsung Chromebook Plus (V2) is equipped with a built-in pen and offers a light, thin and stylish design that delivers versatility, portability and a premium experience at a competitive price point.

"Today's consumers want to be able to maximize their communication while also expressing their creativity wherever they are, and the new Samsung Chromebook Plus fulfills that need, " said Alanna Cotton, Senior Vice President and General Manager at Samsung Electronics America. "For those who choose Chrome OS, we wanted to give them a lot of reasons to choose the new Samsung Chromebook Plus, as it is designed especially for people who never stop moving, to match their pace and magnify their creativity."

Samsung Electronics, announced today that it is the first in the industry to begin volume production of modules containing a 16 gigabit (Gb) monolithic 64 gigabyte (GB) DDR4 memory solution. The new registered dual in-line memory module (RDIMM), which is designed primarily for use in enterprise and cloud server applications, will be shown at the HPE Discover Las Vegas conference and exhibition June 19-21 at the Venetian-Palazzo Resort Center in Booth #170.

"Large data centers are increasingly embracing Big Data, high-speed mobility, IoT, deep learning, AI and cloud-native technologies, with Samsung and other leaders like HPE and AMD delivering integrated solutions that are faster, denser, more scalable, and more power-conserving," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "At Samsung, we are taking the industry to new horizons with our 16Gb, 64GB RDIMMs and other leading-edge memory and storage solutions in helping to fully enable the real-time needs of leading enterprise OEMs (original equipment manufacturers) worldwide," he added.