AMD and Samsung today announced support for Radeon FreeSync technology in the new Samsung QLED 55" to 82" TV range, bringing the ultimate, ultrawide 4K gaming experience to an entirely new format - big screen TVs. Samsung is the first company to utilize industry-leading Radeon FreeSync adaptive refresh technology for stutter-free gaming inside a consumer television set. With High Dynamic Range (HDR) support up to 1000nits and stunning picture quality, Samsung's QLED displays allow gamers to experience strikingly high refresh rates and low latency on TVs at a variety of price points and screen sizes ranging from 55" to 82" creating a single display for all their home entertainment needs.

Over the past three years, Radeon FreeSync technology has driven widespread adoption and become the industry's most selected solution for smooth gaming. Earlier this year, AMD expanded the ecosystem by propelling tear-free gameplay beyond the PC with the launch of support for FreeSync technology in Microsoft's Xbox One S and Xbox One X consoles in early March. With more than 250 compatible displays offered by more than 20 partners, this is more than double the availability of competing technology.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has started mass producing the industry's first 32-gigabyte (GB) double data rate 4 (DDR4) memory for gaming laptops in the widely used format of small outline dual in-line memory modules (SoDIMMs). The new SoDIMMs are based on 10-nanometer (nm)-class process technology that will allow users to enjoy enriched PC-grade computer games on the go, with significantly more capacity, higher speeds and lower energy consumption.

Using the new memory solution, PC manufacturers can build faster top-of-the-line gaming-oriented laptops with longer battery life at capacities exceeding conventional mobile workstations, while maintaining existing PC configurations. "Samsung's 32GB DDR4 DRAM modules will deliver gaming experiences on laptops more powerful and immersive than ever before," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "We will continue to provide the most advanced DRAM portfolios with enhanced speed and capacity for all key market segments including premium laptops and desktops."

Samsung Electronics, a world leader in advanced semiconductor technology solutions, today unveiled a series of new silicon innovations at the heart of future high-performance computing and connected devices. With comprehensive process technology roadmap updates down to 3-nanometer (nm) at the annual 'Samsung Foundry Forum (SFF) 2018 USA', Samsung Foundry is focused on providing customers with the tools necessary to design and manufacture powerful, yet energy-efficient system-on-chips (SoC) for a wide range of applications.

"The trend toward a smarter, connected world has the industry demanding more from silicon providers," said Charlie Bae, executive vice president and head of the Foundry Sales & Marketing Team at Samsung Electronics. "To meet that demand, Samsung Foundry is powering innovation at the silicon level that will ultimately give people access to data, analysis, and insight in new and previously unthought-of ways to make human lives better. It is imperative for us to accomplish the first-time silicon success for our customers' next-generation chip designs."

Samsung continues to outpace all competition in the SSD market - which it has basically cornered, at least in enthusisasts' minds, when it comes to performance and reliability. In a bid to strengthen their grip, Samsung have decided to introduce their 970 EVO and 970 PRO SSDs with lower pricing than previously announced. This reduced pricing across the entire capacity catalog is sure to bring the heat to other, competing solutions in the market, and make Samsung's options - which now count with a 5 year warranty - all the more appealing.

The new pricing will see Samsung's 970 EVO, for example, going for $109.99 in its 250 GB form; $199 for 500 GB; $399 for its 1 TB capacity; and $799 in its ultimate, 2 TB form. These prices place it in an extremely competitive light with Intel's 760p, for example ($116.25, $215.45, $399.99 and $1730.01, respectively) and WD's in-house WD Black ($119.99, $234.24 and $449.99 for the 1 TB version). The 970 PRO, the best-performing SSD, will apparently be available from $249.99 (500 GB) and $499.99 (1 TB). Samsung essentially lowered pricing against its previous generation 960 EVO and 960 PRO, while delivering (virtually) across-the-board improvements.

Samsung Electronics Co., Ltd. introduced today the Samsung PRO Endurance microSDHC /microSDXC card, which offers industry-leading endurance and up to 43,8001 hours of continuous video recording. Designed for consumers and B2B channel customers who use intensive video monitoring applications such as surveillance and security cameras, body cameras and dash cams, the PRO Endurance makes continuous video monitoring fast and stable. It delivers read speeds of up to 100 MB/s and provides FHD recording and 4K support via write speeds of up to 30 MB/s.

"Consumers want to feel assured with their video surveillance solutions, and the need for longer-lasting, higher performing memory cards that can withstand extreme conditions and capture critical moments is at an all-time high," said Un-Soo Kim, senior vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "Samsung is proud to again advance what is possible in memory card technology with the introduction of the PRO Endurance, which offers security-minded consumers the industry's highest levels of endurance and optimized read/write speeds for immediate access to critical surveillance content."

Law firm Hagens Berman has filed a class action lawsuit against Samsung, Micron, and Hynix in the US District Court for the Northern District of California. According to the firm's investigation, the three DRAM manufacturers conspired to limit the supply of DRAM chips between 2016 and 2017 with the purpose of inflating their prices. The firm affirmed that DRAM saw a 47 percent increase in price during 2017, which made it the largest jump ever in the last 30 years. As noted by the filing, Samsung, Micron and Hynix collectively own 96 percent of the worldwide DRAM market as of 2017. The "conduct changed abruptly" when the Chinese government launched an investigation to look into the matter. This class action is opened to consumers in the U.S. who've purchased a device that uses DRAM between July 1, 2016 and February 1, 2018.

"What we've uncovered in the DRAM market is a classic antitrust, price-fixing scheme in which a small number of kingpin corporations hold the lion's share of the market," stated Hagens Berman managing partner Steve Berman. "Instead of playing by the rules, Samsung, Micron and Hynix chose to put consumers in a chokehold, wringing the market for more profit."

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing 10-nanometer (nm)-class 16-gigabit (Gb) LPDDR4X DRAM for automobiles. The latest LPDDR4X features high performance and energy efficiency while significantly raising the thermal endurance level for automotive applications that often need to operate in extreme environments. The 10nm-class DRAM will also enable the industry's fastest automotive DRAM-based LPDDR4X interface with the highest density.

"The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency, ," said Sewon Chun, senior vice president of memory marketing at Samsung Electronics. "Samsung will continue to closely collaborate with manufacturers developing diverse automotive systems, in delivering premium memory solutions anywhere."

Samsung Electronics, today introduced the Samsung 970 PRO and EVO, the third generation of its industry-leading consumer solid state drive (SSD) lineup. Having led the market with the first consumer-focused NVMe SSD in 2015, Samsung continues to push the performance barriers with this latest generation of SSDs that are built for tech enthusiasts and professionals so that they can enjoy higher bandwidth for intensive workloads on PCs and workstations.

"Samsung has led the NVMe SSD industry since its inception, and the company continues to define the latest standards of consumer storage with unprecedented performance of the 970 PRO and EVO SSDs," said Un-Soo Kim, senior vice president of Brand Product Marketing, Memory Business at Samsung Electronics. "The 970 series sets a new bar in all aspects for the NVMe SSD market with groundbreaking performance, superior reliability and best-in-class capacity."

Samsung Electronics today announced the Samsung Notebook Odyssey Z, a strikingly thin and light laptop, that has been crafted with state-of-the art engineering and advanced thermal management to ensure a breathtaking gaming experience. It was launched in Beijing, China at Intel's Worldwide Launch Event of the 8th generation Intel Core i7 processor with 6 cores, which comes with the Samsung Notebook Odyssey Z.

Design
The Samsung Notebook Odyssey Z takes an entirely new approach to gaming. Redesigned with revolutionary thermal management hardware, the in-built Z AeroFlow Cooling System consists of three key components: the Dynamic Spread Vapor Chamber, the Z AeroFlow Cooling Design and the Z Blade Blower. They're all built to keep the Odyssey Z cool in the heat of battle, whilst remaining lightweight and portable, so you can take those powerful gaming experiences with you, wherever you need to go.

Samsung Electronics today announced the Samsung Notebook 5 and Notebook 3, completing the Notebook portfolio. With a seamless, fluid design and embedded with the latest hardware balancing speed, power and usability, these Notebooks are made for the everyday computing experience that fuses comfort, performance and style.

Design
Both Notebooks feature a slim, sleek, zero-screw contemporary finish continuing Samsung's design heritage. The Samsung Notebook 5 and Notebook 3 measure just 19.6mm and 19.9mm wide respectively, making them easy to use, carry, and transport - whatever your lifestyle. Designed to blend into any environment, the Samsung Notebook 3 is available in 15 inches and 14 inches, as well as, four unique colors - Misty Gray, Night Charcoal, Deep Peach, and Pure White, while the Samsung Notebook 5 is available in 15 inches and comes in a timeless and sophisticated Light Titan color, wrapped in a stylish metal body.

Samsung Electronics has announced last Wednesday that they are planning to double their NAND memory output capacity in china. The announcement, done at a groundbreaking ceremony in its Xi'an fabrication facility in inland Shaanxi Province, should see some $7 billion invested over the course of three years. With this investment in both facilities and machinery, Samsung expected production capacity to roughly double from current values to some 220,000, 300 mm 3-D flash memory wafers by 2020.

The motives for this increased Samsung investment in mainland China are being put forward as a way for the South Korean giant to temper relationships with China, one of its greatest importers of NAND memory. Further investment into China likely assuages the country's protectionist policies, since at least it receives something back from its import volume. By investing further into a second assembly line at its Xi'an fabrication facility, Samsung is also looking to reduce risk derived from over-condensed manufacturing facilities in South Korea.

G.SKILL International Enterprise Co., Ltd., the world's leading manufacturer of extreme performance memory and gaming peripherals, is excited to announce the achievement of an unprecedented DDR4-5000 MHz memory in dual-channels. This major breakthrough is the world's first instance of two DDR4 RGB memory modules breaking the DDR4-5000 MHz barrier on just air cooling, when considering that this world-record class speed was only achievable under extreme liquid nitrogen cooling just two years ago. This massive technological feat is achieved with the high performance Samsung DDR4 B-die ICs, and running on the MSI Z370I GAMING PRO CARBON AC motherboard and the Intel Core i7-8700K processor.

Samsung unveiled an M.2 variant of its flagship high-performance Z-SSD. Targeted at workstations, HPCs, and AI servers, the Z-SSD lineup is built around Samsung's proprietary Z-NAND flash memory, that offer "up to 10 times" higher cell read performance than conventional 3D V-NAND (found on drives such as the 960 Pro). This performance is then traded off for the lowest possible latencies and response-times, which can help certain AI applications. The Z-SSD M.2 is built in the M.2-22110 (110 mm-long) form-factor, and features PCI-Express gen 3.0 x4 interface, and takes advantage of the NVMe protocol.

The drive appears to feature an 8-channel controller that's similar to the one that drives the company's PM983 SSD, and not quite the 16-channel controller found on the larger AIC variant of this drive. Available in capacities of 240 GB and 480 GB, the drive offers sequential transfer rates of up to 3200 MB/s reads, with up to 2800 MB/s writes; with an endurance of 30 DWPD. Like its larger siblings, the Z-SSD M.2 comes with a bank of capacitors to offer power-loss protection. The company didn't reveal availability or pricing information.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is rolling out its PM883, the highest density datacenter SATA drive, at eight terabytes (TB). Samsung's new solid state drive (SSD) offering is the industry's first datacenter SATA drive to incorporate LPDDR4 DRAM modules and features a 6.0-gigabits-per-second (Gbps) 2.5-inch SATA interface.

The high-performance PM883 is expected to accelerate a transition in many existing enterprise datacenters to SATA-formatted SSD designs, with improved economies of scale through the use of advanced-generation V-NAND technology at higher densities.

"We are thrilled to have the opportunity to enable a high level of storage density with low power consumption, which thanks to the efficiency of our 64-layer V-NAND-based technology, allows us to double the capacity of current SATA storage," said Jim Elliott, corporate senior vice president, memory sales and marketing, Samsung Semiconductor, Inc. "Our expanded lineup for the PM883 will offer up to 8TB to allow optimal use in existing enterprise and cloud storage systems."

A power-outage on 9th March, at one of Samsung's NAND flash manufacturing plants located in Pyeongtaek, Korea, will have a notable impact on global NAND flash production. It reduced the global NAND flash output for the month of March 2018 by 3.5 percent, a number that isn't insignificant, and translates into non-volatile memory for millions of devices. It also trims Samsung's output by 11 percent for the month. SIlicon fabrication is a highly sensitive process, and the power-outage is said to have damaged up to 60,000 wafers of NAND flash chips.

The impact of this event on global prices of NAND flash memory, and devices based on it, remains to be seen. Any inflation could be nipped in the bud by Samsung and other NAND flash makers significantly increasing production through this quarter. Samsung will begin expansion of its NAND flash plant in Xi'an, China, which currently outputs 120,000 wafers per month, and is expected to put out 320,000 wafers a month after the expansion.

In a bid to ensure sufficient supply of NAND flash memory to meet the growing demands of not just PC, but also smartphone markets, China's Tsinghua Unigroup and Intel are in talks to license-manufacture 64-layer 3D NAND flash, based on existing IMFlash Technologies designs. IMFlash is a joint-venture between Intel and Micron Technology. Tsinghua Unigroup is one of the biggest beneficiaries of the Chinese Government's ambitious plan to invest RMB 1 trillion (USD $158 billion) over the next five years, to increase China's semiconductor self-sufficiency to 70 percent, by 2025.

The move will significantly increase supply of NAND flash memory, and is seen as a market threat to Korean NAND flash giants Samsung and SK Hynix, and Japanese Toshiba. IMFlash Technology released its first 64-layer 3D NAND flash to the market in 2017, and is currently developing a 96-layer 3D NAND flash chip, which, along with newer 10 nm-class silicon fabrication process, could double densities over the current 64-layer chips.

Samsung Electronics Co., Ltd., a world leader in advanced semiconductor technology, today broke ground on a new EUV (extreme ultraviolet) line in Hwaseong, Korea, aiming to maintain its leadership in state-of-the-art semiconductor technology. With this new EUV line, Samsung will be able to strengthen its leadership in the single nanometer process technology by responding to market demand from various applications, including mobile, server, network, and HPC (high performance computing), where high performance and power efficiency are critical.

The new facility is expected to be completed within the second half of 2019 and start production ramp-up in 2020. The initial investment in this new EUV line is projected to reach US$ 6 billion by 2020 and additional investment will be determined depending on market circumstances. Samsung has decided to utilize cutting-edge EUV technology starting with its 7-nanometer (nm) LPP (Low Power Plus) process. This new line will be set up with EUV lithography equipment to overcome nano-level technology limitations. Samsung has continued to invest in EUV R&D to support its global customers for developing next-generation chips based on this leading-edge technology.

Samsung Electronics, a world leader in advanced semiconductor technology, and Qualcomm Technologies, Inc., a subsidiary of Qualcomm Incorporated, today announced the intention to expand their decade-long foundry relationship into EUV (extreme ultra violet) lithography process technology, including the manufacture of future Qualcomm Snapdragon 5G mobile chipsets using Samsung's 7-nanometer (nm) LPP (Low Power Plus) EUV process technology.

Using 7LPP EUV process technology, Snapdragon 5G mobile chipsets will offer a smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's largest capacity Serial Attached SCSI (SAS) solid state drive (SSD) - the PM1643 - for use in next-generation enterprise storage systems. Leveraging Samsung's latest V-NAND technology with 64-layer, 3-bit 512-gigabit (Gb) chips, the 30.72 terabyte (TB) drive delivers twice the capacity and performance of the previous 15.36 TB high-capacity lineup introduced in March 2016.

This breakthrough was made possible by combining 32 of the new 1TB NAND flash packages, each comprised of 16 stacked layers of 512 Gb V-NAND chips. These super-dense 1 TB packages allow for approximately 5,700 5-gigabyte (GB), full HD movie files to be stored within a mere 2.5-inch storage device.

Samsung Electronics America, Inc. today announced that three new PCs will be available for purchase starting February 18. The Samsung Notebook 9 Pen will be available on Samsung.com and Amazon.com for $1,399.99, along with the Samsung Notebook 9 (2018), which comes in 13-inch and 15-inch models, starting at $1,199.99 and $1,299.99, respectively. The Samsung Notebook 7 Spin (2018) will be available at Best Buy and on Samsung.com and Bestbuy.com for $899.99.

Samsung Notebook 9 Pen: Lightweight convertible with embedded S Pen
Available in a 13-inch model ($1,399.99), the Notebook 9 Pen is Samsung's lightest 2-in-1 PC weighing 2.2 pounds that comes with the creative power of the S Pen, popularized in Samsung Galaxy Note devices. It is equipped with an 8th Generation Intel Core i7 processor and engineered with Metal12, a premium magnesium alloy built for ultimate portability and durability.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production of a 256-gigabyte (GB) embedded Universal Flash Storage (eUFS) solution with advanced features based on automotive specifications from the JEDEC UFS 3.0 standard, for the first time in the industry. Following the memory breakthrough of the automotive industry's first 128GB eUFS in September, 2017, Samsung's 256GB eUFS is now being shipped to automotive manufacturers preparing the market for Advanced Driver Assistance Systems (ADAS), next-generation infotainment systems and new-age dashboards in luxury vehicles.

As thermal management is crucial for automotive memory applications, Samsung's 256GB eUFS extends the temperature range to between -40°C and 105°C for both operational and power-saving modes. Warranties for conventional embedded multimedia card (eMMC) 5.1 solutions generally cover -25°C to 85°C for vehicles in operation and -40°C to 85°C when in idle or power-saving mode.

Samsung's management committee has reportedly convened this morning, February 7th, to officially approve an investment plan on a new semicondctor manufacturing facility. Reports say this new factory is expected to be built on Pyeongtaek, the same general location as Samsung's current Pyeongtaek Fab 1. The investment plan is being made with plans for the plant to start production of the "P2-Project" plant during the first half of 2019.

Giving credence to these industry reports is the fact that Samsung has already celebrate gas pipeline contracts with companies (such as Wonik Holdings), just last month, in preparation for this new fab construction. It's as of yet unclear what specific plan the company has for the new factory, though it will certainly inject extraordinary new amounts of volume to Samsung's various foundry businesses. With two years of construction since it broke ground in May, 2015, the original fabrication line at the Pyeongtaek campus is currently the largest single Fab in the industry; in the face of this, it seems that a "first half of 2019" starting date for semiconductor production at Samsung's new manufacturing facilities may be slightly optimistic. However, those plans start to sound a little more on the doable side if one considers these might actually be plans for an expansion of the current Pyeongtaek Fab 1 facilities, plans for which the company has already announced back in July 2017.

PC hardware enthusiasts all over (but particularly in our own forums) have been adamant in how this is one of the worst times to be building a new system. And it's true; the DIY market is a mess right now, as our own btarunr mentioned in his latest editorial; so much so, that in a full reversal of years and years of experience, users might now actually be better served in the $/performance department by buying their systems from boutique retailers, than by acquiring all of the parts separately. It's a mad, mad world out there, for a multitude of reasons; but one such reason is DRAM pricing. And fortunately, it seems that China's National Development and Reform Commission (NDRC) is on the verge of signing a Memorandum Of Understanding (MOU) with Samsung that might help the DRAM market as a whole.

One of the industry's giants is having a strong showing, with a grand total of $64.17 billion in revenue and $14 billion in profits for Q4 2017. These results were buoyed by earnings increases across almost all of Samsung's sectors: the Consumer Electronics, Device Solutions, and Display Panel sectors registered strong growth. The only outlier was IT & Mobile Communications, where the company fell short for the second consecutive quarter (likely has something to do with splash damage from Samsung's still too close for comfort, exploding failures).

Samsung is expecting stable NAND demand alongside increased DRAM demand for datacenters. Samsung is citing "strong market conditions" for its semiconductor revenue (particularly considering DRAM pricing and volume), and says that what would be, under normal circumstances, a slow quarter due to low seasonality of its semiconductor business was somewhat compensated by Samsung's acquisition of new China clients (I wonder if this has anything to do with mining ASICs...) There's also no mention of Samsung's entry into the OLED TV market, with the company instead choosing to focus on its Quantum Dot technology, higher resolution panels, and higher diagonals as the method of choice to attract new buyers. The full press release follows.

One of the world's largest SoC, DRAM, and NAND flash makers, with its own semiconductor fabs, Samsung, is eyeing itself a large slice of the crypto-currency mining craze. The company reportedly entered volume production of a highly efficient crypto-currency mining ASIC, for an unnamed client from China. The client has placed a gargantuan order for crypto-coin mining ASICs contract-manufactured by Samsung, which appears to be targeted at Bitcoin, for now.

China's largest mining ASIC solutions providers, Bitman and Cannan, have similarly contracted TSMC to manufacture mining ASICs. An ASIC (from a mining context) is a single-chip solution that combines a CPU, a SIMD parallel-processing component tailored for mining, memory, and storage. It has infinitesimally smaller PCB, power, and thermal footprints compared to PCs with GPUs, and can be deployed in extremely large numbers for mining on an industrial-scale.