Solidigm, a leading provider of innovative NAND flash memory solutions, announced today the introduction of the world's highest capacity PCIe solid-state drive (SSD): the 122 TB (terabyte) Solidigm D5-P5336 data center SSD. The D5-P5336 doubles the storage space of Solidigm's earlier 61.44 TB version of the drive and is the world's first SSD with unlimited Random Write endurance for five years—offering an ideal solution for AI and data-intensive workloads. Just how much storage is 122.88 TB? Roughly enough for 4K-quality copies of every movie theatrically released in the 1990s, 2.6 times over.

Data storage power, thermal and space constraints are accelerating as AI adoption increases. Power and space-efficient, the new 122 TB D5-P5336 delivers industry-leading storage efficiency from the core data center to the edge. Data center operators can deploy with confidence the 122 TB D5-P5336 from Solidigm, the proven QLC (quad-level cell) density leader with more than 100EB (exabytes) of QLC-based product shipped since 2018.

SMART Modular Technologies, a global leader in integrated memory solutions, solid-state drives, and hybrid storage products, today announced its new ruggedized T6EN PCIe/NVMe flash drives for aerospace, defense, and industrial applications. This new family of SSDs is available in U.2, E1.S and M.2 2280 form factors, enabling flexibility for end users based on their specific application and configuration needs. These T6EN SSDs offer capacities up to 15 TB (terabytes) for the U.2 version and up to 8 TB for the E1.S and M.2-2280 versions. All three versions utilize 3D TLC flash memory.

"Our new T6EN SSDs deliver a rich, ruggedized feature set coupled with our proprietary security algorithms, erase trigger, and hardware write-protection," explains Mike Guzzo, senior director of SMART's RUGGED line of flash products. Delivering a more robust SSD starts at the design stage, where SMART specifies higher margins for routing of signals, thicker PCBs, and more durable enclosures. During the engineering and development process, SMART selectively sources only the highest reliability components and performs deep integration testing - including 8-hour burn-in testing under wide degrees of temperature variation - to ensure conformance with all requirements for secure, ruggedized storage.

Apacer today introduced the PE4430-R, a compact M.2 NVMe SSD in the M.2-2230 form-factor, which makes it suitable for handheld gaming consoles, such as the Steam Deck. The drive uses a graphene based heatspreader that's 0.17 mm-thick. It comes in 1 TB and 2 TB capacities, and appears to be based on a combination of a Phison E27T DRAMless controller, and a single 3D TLC NAND flash chip. It takes advantage of the PCI-Express 4.0 x4 host interface, offering sequential transfer speeds of up to 5500 MB/s reads, with up to 5200 MB/s writes, with around 700,000 IOPS of 4K random reads, and around 880,000 IOPS 4K random writes. The Apacer PE4430-R comes with some impressive endurance figures, of 500 TBW for the 1 TB variant, and 1,000 TBW for the 2 TB. The company didn't reveal pricing information.

Patriot Memory, a leading manufacturer of high-performance gaming memory modules, SSDs, flash memory, and gaming peripherals, today announced the launch of its latest innovation under the Viper Gaming brand: the Viper PV573 PCIeGen5 x4 M.2 2280 SSD. This product reinforces Patriot's leadership in cutting-edge technology, pushing speed boundaries beyond its predecessor, the PV553.

The Viper PV573 SSD utilizes advanced 3D NAND vertical stacking technology, significantly enhancing storage density while reducing power consumption and delivering faster read and write speeds. This innovation also improves durability, making it a reliable choice for users with demanding storage needs. With capacity options of up to 4 TB, the Viper PV573combines powerful performance in a compact, portable form factor, achieving the perfect balance of high capacity and efficiency within a small footprint.

Greenliant is now sampling high-endurance EnduroSLC NVMe M.2 2242 and 2280 ArmourDrive EX Series solid state drives (SSDs), providing 75,000 and 150,000 program-erase (P/E) cycles. Operating between -40 and +95 degrees Celsius, NVMe M.2 ArmourDrive EX Series SSDs offer high reliability and long-term support required by leading customers in aerospace and defense, industrial, transportation and networking.

Greenliant is also sampling upgraded NVMe M.2 2242 / 2280 ArmourDrive PX Series SSDs with high-quality industrial 3-bit-per-cell (TLC) 3D NAND that support 5,000 P/E cycles. Optimized for high performance and low power consumption, both EX and PX series products provide the convenience of removability. Offered from popular 2280 (GLS88AS) to small 2242 (GLS88CS) form factors and available in a wide range of capacities, these single-sided, thin-profile SSDs are ideal for space-constrained designs.

TrendForce's latest reports reveal that the second quarter of 2024 saw a significant increase in demand for enterprise SSDs due to the increased deployment of NVIDIA GPU platforms and rising storage needs driven by AI applications, along with a surge in demand from server brands. The surge in demand for high-capacity SSDs for AI applications—coupled with suppliers' inability to adjust capacity in the first half of the year—resulted in a supply shortage that drove average enterprise SSD prices up by more than 25% QoQ. This price increase led to a revenue growth of over 50% for suppliers.

Looking ahead to the third quarter, demand from North American CSP customers continues to rise, and server brands show no signs of slowing down their orders, further boosting procurement volumes of enterprise SSD. With supply shortages persisting into the third quarter, TrendForce forecasts a 15% increase in contract prices compared to the previous quarter, with supplier revenues expected to grow by nearly 20%.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND).

With the industry's first mass production of QLC 9th-generation V-NAND, following the industry's first triple-level cell (TLC) 9th-generation V-NAND production in April this year, Samsung is solidifying its leadership in the high-capacity, high-performance NAND flash market.

Gabriel Ferraz, maintainer of the TechPowerUp SSD database and content creator, recently published an article that shows the relationship between SLC (Single-Level Cell) cache technology and its performance impact on SSDs. Using a Pichau Aldrin Pro 2 TB SSD featuring an Innogrit IG5236 controller and YMTC 128-layer TLC NAND, Gabriel has uncovered both the advantages and potential drawbacks of this feature. The article reveals that with SLC cache enabled, which acts as a high-speed buffer, the SSD achieved remarkable write speeds of up to 6.5 GB/s, but only until 691 GB had been written. Beyond that, speeds dropped to 2.2 GB/s and then to 860 MB/s as the drive filled up.

Disabling the SLC cache delivers more consistent performance results that are 2.1 GB/s across the whole capacity of the SSD, but with lower peak performance. Testing also examined the impact on power consumption and efficiency. With the SLC cache active, the SSD consumed approximately 5 W of power while achieving over 3000 MB/s bandwidth. Disabling the cache reduced power consumption but at the cost of halving the bandwidth to around 1900 MB/s, resulting in lower overall efficiency. Maximum power consumption with cache enabled peaked at 7.3 W, compared to a lower figure when operating in constant TLC mode. Below, you can see some performance benchmarks published on The Overclock Page.

Kingston Digital, Inc., the flash memory affiliate of Kingston Technology Company, Inc., a world leader in memory products and technology solutions announced its latest data center SSD, DC2000B, a high-performance PCIe 4.0 NVMe M.2 SSD optimized for use in high-volume rack-mount servers as an internal boot drive. Using the latest Gen 4x4 PCIe interface with 112-layer 3D TLC NAND, DC2000B is ideally suited for internal server boot drive applications as well for use in purpose built systems applications where higher performance and reliability are required. DC2000B includes on-board hardware-based power loss protection (PLP), a data protection feature not commonly found on M.2 SSDs. It also includes a new integrated aluminium heatsink that helps to ensure broad thermal compatibility across a wide variety of system designs.

"Whitebox server makers and Tier 1 server OEMs continue to equip their latest generation servers with M.2 sockets for boot purposes as well as internal data caching," said Cameron Crandall, enterprise SSD business manager, Kingston. "DC2000B was designed to deliver the necessary performance and write endurance to handle a variety of high duty cycle server workloads. Bringing the boot drives internal to the server preserves the valuable front loading drive bays for data storage."

TrendForce's latest report on enterprise SSDs reveals that a surge in demand for AI has led AI server customers to significantly increase their orders for enterprise SSDs over the past two quarters. Upstream suppliers have been accelerating process upgrades and planning for 2YY products—slated to enter mass production in 2025—in order to meet the growing demand for SSDs in AI applications.

TrendForce observes that increased orders for enterprise SSDs from AI server customers have resulted in contract prices for this category rising by over 80% from 4Q23 to 3Q24. SSDs play a crucial role in AI development. In AI model training, SSDs primarily store model parameters, including evolving weights and deviations.

Nextorage announces the release of its new G Series ME gaming SSD, this M.2 2230 SSD is designed for compact gaming PCs and tablet PCs, combining PCIe 4.0 high-speed performance with DRAM-less power saving. The G Series ME offers impressive specifications with sequential read speeds up to 7,400 MB/s and write speeds up to 6,200 MB/s. Random read and write speeds are rated at 750,000 IOPS and 850,000 IOPS respectively. Available in 1 TB and 2 TB models, the drives feature write endurance of 600 TBW for the 1 TB model and 1,200 TBW for the 2 TB model, both backed by a five-year warranty.

Both models use single-sided 3D TLC NAND Flash, ensuring compatibility with M.2 2230 slots and improved cooling due to top-mounted NAND. The SSD employs DRAM-less technology, utilizing the latest controller and 3D TLC NAND flash to balance speed and power efficiency. To compensate for the lack of DRAM caching, Nextorage implements a "Large-capacity Dynamic SLC Cache," converting unused space into an SLC cache for enhanced performance.

Samsung Electronics today reported financial results for the second quarter ended June 30, 2024. The Company posted KRW 74.07 trillion in consolidated revenue and operating profit of KRW 10.44 trillion as favorable memory market conditions drove higher average sales price (ASP), while robust sales of OLED panels also contributed to the results.

Memory Market Continues To Recover; Solid Second Half Outlook Centered on Server Demand
The DS Division posted KRW 28.56 trillion in consolidated revenue and KRW 6.45 trillion in operating profit for the second quarter. Driven by strong demand for HBM as well as conventional DRAM and server SSDs, the memory market as a whole continued its recovery. This increased demand is a result of the continued AI investments by cloud service providers and growing demand for AI from businesses for their on-premise servers.

Micron Technology, Inc., announced today that it is shipping ninth-generation (G9) TLC NAND in SSDs, making it the first in the industry to achieve this milestone. Micron G9 NAND features the industry's highest transfer speed of 3.6 GB/s, delivering unsurpassed bandwidth for reading and writing data. The new NAND enables best-in-class performance for artificial intelligence (AI) and other data-intensive use cases from personal devices and edge servers to enterprise and cloud data centers.

"The shipment of Micron G9 NAND is a testament to Micron's prowess in process technology and design innovations," said Scott DeBoer, executive vice president of Technology and Products at Micron. "Micron G9 NAND is up to 73% denser than competitive technologies in the market today, allowing for more compact and efficient storage solutions that benefit both consumers and businesses."

Western Digital stealthily introduced a spacious 8 TB variant of its performance WD Black SN850X M.2 NVMe Gen 4 SSD. The drive debuted in 2022 and had topped off at 4 TB. The new 8 TB variant is priced at $849 for the bare drive (without heatsink, model number WDS800T2X0E), and $899 with the PS5-friendly heatsink (model: WDS800T2XHE). The drive combines an in-house controller by Western Digital, with KIOXIA-sourced 3D TLC NAND flash. We're not sure if it's using the same 112-layer BiCS5 that the 4 TB variant does.

Western Digital claims performance figures of up to 7200 MB/s sequential reads, up to 6600 MB/s sequential writes, and up to 1.2 million IOPS 4K random reads/writes. The read speed is a touch lesser than the 7300 MB/s max sequential reads of the 4 TB variant. The write endurance of the 8 TB variant is rated at an impressive 4,800 TBW. Built in the M.2-2280 form-factor the drive takes advantage of the PCI-Express 4.0 x4 interface. Western Digital is backing these drives with 5-year warranties.

ATP Electronics, the global leader in specialized storage and memory solutions, proudly unveils the N651Si Series E1.S solid state drives (SSDs), which offer best in class performance, endurance, and data retention capabilities for the most demanding applications.

Supporting industrial temperature operating range (-40°C to 85°C) along with hardware power loss protection (HW PLP), the new SSDs offer the highest levels of reliability and total cost of ownership value in harsh environments, making them especially beneficial for mission-critical applications running under extreme temperatures, such as automotive, data logger, data centers, and defense/aerospace. Engineered for 1U Edge servers, the EDSFF offering with 9.5 mm symmetrical enclosure is available with up to 8 TB capacity and is constructed with 512 Gb prime NAND die 176-layer 3D triple level cell (TLC).

Samsung has introduced its latest BM1743 SSD, boasting an impressive 61.44 TB of storage capacity. The BM1743 utilizes Samsung's seventh-generation 3D NAND (V-NAND) technology, featuring 176 layers of memory cells. This represents a significant leap from its predecessor, the BM1733, which debuted in 2020 with 96-layer technology and a maximum capacity of 32 TB. Performance-wise, the BM1743 doesn't disappoint. It delivers up to 1.6 million random read IOPS and 110,000 random write IOPS, with sequential read and write speeds of 7.2 GB/s and 2.0 GB/s, respectively. These figures position the drive as a highly capable solution for read-intensive workloads. Samsung claims that the new SSD offers double the sequential read and write speeds of its fifth-generation technology, with random reads quadrupling in performance. This advancement suggests that quad-level cell (QLC) SSDs are now approaching the performance levels of their triple-level cell (TLC) counterparts while offering superior storage density.

The BM1743 is available in the traditional U.2 form factor, with an E3.S variant supporting PCIe Gen 5 also in the lineup, thanks to the custom Samsung controller. Samsung has enhanced the durability and data retention capabilities of the BM1743. The new drive boasts an improved endurance rating of 0.26 drive writes per day (DWPD) throughout its warranty period, a notable increase from the BM1733's 0.18 DWPD. Additionally, the BM1743 extends its power-off data retention to three months, tripling the one-month period of its predecessor. In a hint of things to come, Samsung has suggested that a 122.88 TB model may be on the horizon, potentially doubling the capacity of the BM1743. This new offering puts Samsung in direct competition with Solidigm's D5-P5336, which has dominated the high-capacity SSD market for the past year. High-density storage solutions are becoming more important as AI and HPC tasks require and produce massive amounts of data.

TrendForce reports that while the enterprise sector continues to invest in server infrastructure—especially with the rising adoption of AI driving demand for enterprise SSDs—the consumer electronics market remains lackluster. This, combined with NAND suppliers aggressively ramping up production in the second half of the year, is expected to push the NAND Flash sufficiency ratio up to 2.3% in the third quarter, curbing the blended price hike to a modest 5-10%.

This year, NAND Flash prices saw a robust rebound as manufacturers kept production in check during the first half, helping them regain profitability. However, with a noticeable ramp-up in production and sluggish retail demand, wafer spot prices have dropped significantly. Some wafer prices are now over 20% below contract prices, casting doubts on the sustainability of future price hikes.

Kioxia presented a technology roadmap at the IWM 2024 conference in Seoul, projecting the development of 1,000-layer 3D NAND by 2027. This ambitious goal is based on extrapolating past trends, which saw NAND layers increase from 24 in 2014 to 238 in 2022. Kioxia's plan involves not only increasing layer count but also shrinking cell size and increasing bit levels from TLC (3 bits per cell) to QLC (4 bits per cell), and possibly even to PLC (5 bits per cell).

However, these advancements come with significant technical challenges. Etching the vertical connecting holes (through-silicon vias or TSVs) are harder to achieve and can lead to higher channel resistance. Kioxia proposes solutions such as using single-crystalline silicon instead of polysilicon and switching from tungsten to molybdenum to reduce resistance. They also suggest moving to multi-lane wordlines to reduce the die area needed for electrical connectivity.

Western Digital has released a new budget friendly SSD that got a serious jump in model number, since the company decided to call it the SN5000. Its predecessor is the SN580 launched just under a year ago and price wise, it's the better option of the two. The new SN5000 uses the same BiCS 5 TLC NAND as the SN580 on the 500 GB to the 2 TB SKU, but according to Anandtech, the 4 TB uses BiCS 6 QLC NAND. The SN5000 is still a PCIe 4.0 x4 NVMe drive, but the overall performance has been significantly improved. If we use the 1 TB SKU for comparison, then the sequential read speeds have gone up by 1 GB/s from 4150 MB/s to 5150 MB/s. The sequential write speed is up 750 MB/s from 4150 MB/s to 4900 MB/s.

As for random performance, the read IOPS are up from 600K IOPS to 730K IOPS and the write IOPS are up slightly from 750K to 770K. The 4 TB QLC SKU is said to deliver even better performance with the exception of the random read IOPS. The 1 TB SKU is said to have a write endurance of 600 TBW, but the 4 TB SKU only offers 1200 TBW. That's 0.33 drive writes per day (DWPD) for the 1 TB SKU vs. 0.16 DWPD for the 4 TB SKU, showing the weakness of the QLC NAND. A new feature for the SN5000 series compared to previous WD Blue NVMe drives is support for TGC Pyrite 2.01 encryption. The WD SN5000-series starts at US$70 for the 500 GB model, going up to US$80 for 1 TB, US$140 for 2 TB and topping out at US$280 for the 4 TB model. WD only seems to have the 500 GB model in stock, with all the others being available in 3-4 weeks time. All SKUs come with a five year warranty.

GIGABYTE today launched its flagship M.2 NVMe SSD, the AORUS Gen5 14000 series. The drive packs the winning combination of Phison PS5026-E26 Max14um controller, with Micron B58R 232-layer 3D TLC NAND flash memory, along with a fast LPDDR4 DRAM cache. The drive comes in 1 TB, 2 TB, and 4 TB capacity variants. The maximum speeds vary for the three.

The 2 TB model is the fastest of the three, with a sequential read speed of up to 14,500 MB/s, and sequential write speed of up to 12,700 MB/s. The 4 TB model is the second fastest, with up to 14,100 MB/s sequential reads, and up to 12,600 MB/s sequential writes. The 1 TB model is third, with up to 13,600 MB/s sequential reads, and up to 10,200 MB/s sequential writes. All three models come without a heatsink, with just a metal film label on top. GIGABYTE recommends pairing the drive with M.2 SSD cooling solutions included with your motherboard to minimize performance throttling. The company didn't announce pricing.

MSI also brought plenty of SSD products to the Computex 2024 show, including the new SPATIUM M560 PCIe 5.0 NVMe M.2 SSD based on the Phison E31T controller and Kioxia's 218-layer BiCS 3D TLC NAND, the new SPATIUM non-metal Vapor Chamber SSD Thermal Solution, and a couple of SSD accessories, including the DATAMAG Magnetic Portable SSD and the DATAVAULT SSD Enclosure.

As said, the new SPATIUM M560 PCIe 5.0 NVMe M.2 SSD will use the Phison 7 nm E31T controller paired up with Kioxia 8th generation 218-layer BiCS 3D TLC NAND and offer transfer rates of up to 10,000 MB/s. The controller, according to MSI, should bring up to a 15 percent reduction in power consumption as well as "maximize bandwidths and link efficiency". It will be available in 1 TB, and 2 TB capacities, and MSI will probably have a version that will include the new SPATIUM non-metal Vapor Chamber SSD Thermal Solution which has been also showcased at the Computex 2024 show. MSI says that this is yet another world's first, which uses "a two-phase flow transition of gas and liquid with minimal signal interference, ensuring rapid and silent heat exchange." According to MSI, the new SPATIUM non-metal Vapor Chamber SSD Thermal Solution should provide up to 11 degrees lower temperature compared to a standard aluminium heatsink.

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today launched the SM2322, the industry's fastest single-chip high-performance, low-power, and cost-effective solution for external portable SSDs, supporting up to 8 TB of storage and achieves unparalleled data transfer rates of 20 Gbps for storing and accessing large amounts of content seamlessly from AI smartphones, high-performance multimedia devices, and game consoles.

With the increase of AI-capable devices, high density and high-performance storage solutions are becoming more critical to consumers. Portable SSDs powered by the new SM2322 controller are the only solution that offers low-cost, high-density and high-performance, making it the ideal solution for these applications. Equipped with a USB 3.2 Gen 2x2 interface with 20 Gb/s bandwidth and fully integrated hardware and software solution delivering peak sequential read and write transfer speeds of 2,100 MB/s and 2,000 MB/s, respectively, with up to 8 TB capacity, SM2322 powered high-performance portable SSDs enable an ultra-compact and lightweight form factor. The SM2322 supports the ProRes format and MFi specification for iPhone users while also being compatible with Windows, Android OS, and macOS, making it an ideal high-density, high-performance portable storage solution for AI smartphones, HD content creators, and gaming enthusiasts who require high-density, high-performance portable storage.

During the COMPUTEX 2024 exhibition from June 4th to 7th, Mnemonic Electronic Co., Ltd. (hereinafter referred to as Mnemonic), Longsys's Taiwan subsidiary, will showcase a series of high-capacity SSD products under the theme "Embracing the Era of High-capacity SSDs," providing solutions for global users of high-capacity SSD products.

The lineup of high-capacity products presented by Mnemonic includes the ORCA 4836 series enterprise NVMe SSDs and the UNCIA 3836 series enterprise SATA SSDs. These products are equipped with the latest enterprise-grade 128-layer TLC NAND flash memory, offering high performance, low latency, adjustable power consumption, and high reliability storage solutions for enterprise-grade users such as servers, cloud computing, and edge computing, with a maximum capacity of up to 7.68 TB.

Sabrent introduced the Rocket 2242 M.2 Gen 4 NVMe SSD. The drive is built in the M.2-2242 form-factor (42 mm long), which should make it suitable for certain kinds of handheld game consoles, such as the Legion Go. The Rocket 2242 comes in just one capacity for now, 1 TB. The drive combines a Phison E27T series DRAMless controller with Kioxia 162-layer 3D TLC NAND flash, and takes advantage of the PCI-Express 4.0 x4 host interface to offer sequential transfer speeds of up to 5000 MB/s. The company put out no other performance or endurance related specs. Sabrent is pricing the Rocket 2242 1 TB at USD $99.99, it is available now, and backed by a 5-year warranty.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market.

"We are excited to deliver the industry's first 9th-gen V-NAND, which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product," said SungHoi Hur, Head of Flash Product & Technology at Samsung Electronics. "Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid state drive (SSD) market that meets the needs for the coming AI generation."