Wednesday, March 20th 2019
Samsung Electronics Introduces New Flashbolt HBM2E High Bandwidth Memory
Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology, today announced its new High Bandwidth Memory (HBM2E) product at NVIDIA's GPU Technology Conference (GTC) to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).
The new solution, Flashbolt , is the industry's first HBM2E to deliver a 3.2 gigabits-per-second (Gbps) data transfer speed per pin, which is 33 percent faster than the previous-generation HBM2. Flashbolt has a density of 16Gb per die, double the capacity of the previous generation. With these improvements, a single Samsung HBM2E package will offer a 410 gigabytes-per-second (GBps) data bandwidth and 16 GB of memory."Flashbolt's industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications," said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. "We will continue to expand our premium DRAM offering, and improve our 'high-performance, high capacity, and low power' memory segment to meet market demand."
The new solution, Flashbolt , is the industry's first HBM2E to deliver a 3.2 gigabits-per-second (Gbps) data transfer speed per pin, which is 33 percent faster than the previous-generation HBM2. Flashbolt has a density of 16Gb per die, double the capacity of the previous generation. With these improvements, a single Samsung HBM2E package will offer a 410 gigabytes-per-second (GBps) data bandwidth and 16 GB of memory."Flashbolt's industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications," said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. "We will continue to expand our premium DRAM offering, and improve our 'high-performance, high capacity, and low power' memory segment to meet market demand."
6 Comments on Samsung Electronics Introduces New Flashbolt HBM2E High Bandwidth Memory
Samsung announced a low cost option for HBM few months back (maybe over a year) which uses 512bit rather than 1024bit bus at a higher clock, while providing less bandwidth than regular HBM. The narrower bus makes it possible to use much less expensive organic interposer, something like current MCM processors. But it seems Samsung is still working on it or they couldn't find much interest on it.