G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce two new DDR5 memory series, the Trident Z5 Neo and Flare X5 series, designed for the new AMD Ryzen 7000 Series processors and 600 series motherboards. The Trident Z5 Neo family offerings include RGB (Trident Z5 Neo RGB) and non-RGB (Trident Z5 Neo) variants. Programmed with AMD EXPO technology and created with hand-screened memory ICs, the Trident Z5 Neo and Flare X5 series allow PC enthusiasts, gamers, and overclockers to experience the performance of the new AMD AM5 platform.

Designed for DDR5 memory-enabled AMD Ryzen 7000 Series desktop processors, the Trident Z5 Neo and Flare X5 series are pre-programmed with the latest AMD EXPO (EXtended Profiles for Overclocking) memory profiles, which allow users to easily overclock the memory kits. By simply enabling the AMD EXPO profile in the BIOS with a compatible motherboard and processor, users can unleash overclocked memory speeds on AMD Ryzen 7000 Series processors.

CORSAIR, a world leader in enthusiast components for gamers, creators, and PC builders, today announced the launch of DOMINATOR PLATINUM RGB DDR5 for AMD, VENGEANCE RGB DDR5 for AMD and VENGEANCE DDR5 for AMD, featuring new AMD EXPO technology and ready to power the next generation of Ryzen 7000-series powered PCs.

Available in frequencies up to a screaming-fast 6,000MT/s, and even higher in the future, all CORSAIR DDR5 for AMD kits offer AMD EXPO (Extended Profiles for Overclocking), allowing these modules to be set to their rated speed and performance in just a few clicks. AMD EXPO technology makes setup simple and ensures users can easily run their memory at the speed it was created to run at.

JEDEC Solid State Technology Association and Compute Express Link (CXL) Consortium today announced the signing of a Memorandum of Understanding (MOU) to formalize collaboration between the two organizations. The agreement outlines the formation of a joint work group to provide a forum that facilitates communication and sharing of information, requirements, recommendations and requests with the intent that this exchange of information will help standards developed by each organization augment one another.

"The MOU between JEDEC and CXL Consortium will establish a framework for ongoing communication to align future efforts between the two organizations. The joint work group will collaborate on useful solutions for form factors, management, security, and DRAM and other memory technologies," said Siamak Tavallaei, CXL Consortium President.

NVIDIA's upcoming GeForce RTX 40 series graphics cards are less than two months from the official launch. As we near the final specification draft, we are constantly getting updates from hardware leakers claiming that the specification is ever-changing. Today, @kopite7kimi has updated his GeForce RTX 4080 GPU predictions with some exciting changes. First off, the GPU memory will get an upgrade over the previously believed specification. Before, we thought that the SKU used GDDR6X running at 21 Gbps; however, now, it is assumed that it uses a 23 Gbps variant. Faster memory will definitely result in better overall performance, and we are yet to see what it can achieve with overclocking.

Next, another update for NVIDIA GeForce RTX 4080 comes with the SKU's total board power (TBP). Previously we believed it came with a 420 Watt TBP; however, the sources of kopite7kimi claim that it has a 340 Watt TBP. This 60 Watt reduction is rather significant and could be attributed to NVIDIA's optimization to have the most efficient design possible.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220F: Universal Flash Storage 4.0. In addition, an update to the complementary JESD223E UFSHCI 4.0 standard, and a new companion standard for UFS version 3.1 and above, JESD231 File Based Optimization, have also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 4.0 introduces significant bandwidth and data protection improvements over the earlier version of the standard. All three standards are available for download from the JEDEC website.

If you remember, there were quite a lot of discussions about memory speed "sweet spots" for both the Ryzen 3000- and Ryzen 5000-series, with the user experience not always meeting AMD's sweet spot for memory clocks. Now details of the Ryzen 7000-series memory sweet spot has arrived courtesy of Wccftech and the speed is said to be DDR5-6000. This is 400 MHz higher than the apparent official maximum memory clock speed of DDR5-5600, but as we know, the manufacturer's max memory clock is rarely the actual max. In AMD's case, things obviously work a bit differently, as the Infinity Fabric clock should ideally run at a 1:1 ratio with the memory in the case of the AM4 platform, to deliver best possible system performance and memory latencies.

That said, as we're using DDR memory, the actual clocks are only half of the memory speeds, so the IF clock is operating at no more than 2000 MHz if the memory is DDR4-4000. However, if the same applies to the Ryzen 7000-series, it appears that AMD has managed to bump the IF clocks by a not insignificant 1000 MHz, as the IF fabric would now be operating at up to 3000 MHz. This could see the Ryzen 7000-series offering better memory latencies than Intel's Alder Lake and upcoming Raptor Lake CPUs, as Intel is running DDR5 memory at a 2:1 ratio or a 4:1 ratio. AMD is said to still have a 2:1 ratio as well, but as with the AM4 CPUs, this offers worse overall performance.

Update 11:49 UTC: Yuri Bubliy aka @1usmus has confirmed on Twitter that the max IF frequency of 3000 MHz and it seems like AMD has added a range of new memory and bus related features to the AM5 platform, going by the additional features he posted.

Micron Technology, Inc., one of the world's largest semiconductor companies and the only U.S.-based manufacturer of memory, today announced its plans to invest $40 billion through the end of the decade to build leading-edge memory manufacturing in multiple phases in the U.S. With the anticipated grants and credits made possible by the CHIPS and Science Act, this investment will enable the world's most advanced memory manufacturing in America. Micron expects to begin production in the second half of the decade, ramping overall supply in line with industry demand trends.

Micron's planned investment, the largest in memory manufacturing in U.S. history, will ultimately create up to 40,000 new American jobs including approximately 5,000 highly paid technical and operational roles at Micron. The Micron investment will also enrich surrounding communities by bolstering education, workforce training, transportation and several other services. Micron is finalizing its specific U.S. expansion plans and will share additional details in the coming weeks.

SMART Modular Technologies, Inc. ("SMART"), a division of SGH and a global leader in memory solutions, solid-state drives, and hybrid storage products announces its SMART Zefr Memory, a proprietary process that eliminates more than 90% of memory reliability failures and optimizes memory subsystems for maximum uptime. System start-up delays are frequently attributed to memory errors. These failures reduce system efficiency and may also lead to higher maintenance costs and lower system yield rates. These failures reduce system efficiency and may also lead to higher maintenance costs and lower system yield rates. SMART Zefr Memory has been tested under real-world conditions to identify and filter out marginal components that may undermine memory reliability.

SMART Zefr Memory uses a proprietary screening process developed by SMART that when performed on memory modules ensures the industry's highest levels of uptime and reliability. SMART Zefr Memory is ideally suited for data centers, hyperscalers, high performance computing (HPC) platforms, and other environments that run large memory applications and depend on uptime for customers.

As the world dives further into the high-speed DDR5 generation, DDR5 technologies are urged to meet the demands for more reliable and durable products. Team Group, a world-leading memory manufacturer, continues to pursue advancement and is dedicated to providing an upgraded DDR5 solution to offer higher frequencies to users around the world. Today, Team Group launches ELITE PLUS DDR5 Desktop Memory with a brand new heat sink design to effectively increase reliability. Furthermore, Team Group announces a new frequency of 6,000 MHz for ELITE DDR5 to further increase operating performance and deliver an ultra-smooth user experience. The ELITE PLUS DDR5 and ELITE DDR5 6,000 MHz Desktop Memory will be available to global users via Amazon and Newegg in North America soon.

ELITE PLUS DDR5 Desktop Memory is equipped with a sleek, simple, and asymmetric aluminium heat sink that has been specially designed to be non-conductive and to protect against scratches, acids, rusting and rotting to provide full protection for the DDR5 module. ELITE PLUS DDR5 Desktop Memory is also equipped with a 1.1 V standard working voltage which further reduces energy consumption for each unit of bandwidth comparing to the 1.2 V in DDR4, providing a more efficient power usage. The DDR5 module is equipped with PMICs for effective power distribution, reliable power supply, and minimal noise interference. The IC supports on-die ECC, a feature that self-corrects DRAM cells for enhanced stability and reliability by reducing risks of information errors.

Memory giant Micron Technology has commenced mass-production of 21 Gbps and 24 Gbps-rated GDDR6X memory chips that will be exclusively used by NVIDIA in its next-generation RTX 40-series "Ada" graphics cards. GDDR6X is a derivative of GDDR6 co-developed by NVIDIA and Micron, which leverages PAM4 signaling to increase data-rates. Depending on the graphics card model, NVIDIA will use 8 Gbit (1 GB) or 16 Gbit (2 GB) density memory chips. We're hearing that 21 Gbps will be the standard data-rate used by SKUs that succeed the RTX 3080 and RTX 3080 Ti; while 24 Gbps will be used by the faster RTX 3090/Ti successors. The part numbers of these memory chips are listed below.

ADATA, today unveils its latest series of memory modules for creators, the ADATA ACE series. Creators can choose from two models depending on their budget and performance requirements, namely the ADATA ACE 6400 DDR5 and ACE 3600 DDR4. The series also includes a limited-edition ACE 6500 DDR5 module that features a one-of-a-kind pattern design created in conjunction with a designer from Germany. All three modules support Intel XMP for hassle-free overclocking, are built with high-quality, low-latency chips, and are compatible with the latest Intel and AMD platforms.

As a creator, it is often necessary to switch between different applications to perform multiple tasks such as loading files, editing, rendering, or transferring files. What's more, frequent software updates take up valuable memory resources and thus impact memory performance. ADATA understands that creativity should never be restricted and therefore developed the ADATA ACE series memory. With ACE series memory modules, creators will enjoy enhanced performance that will allow them to be more productive and creative. Supporting Intel XMP, the modules can overclock for blazing-fast performance, whether for graphic design, video editing, or even more demanding 3D computing needs. The ADATA ACE DDR4 3600 and DDR5 6400 come in a 16 GB dual-kit.

During this year's Flash Memory Summit, Phison, a company known for SSD controllers and now flash drives, demonstrated a system running AMD Ryzen 7000 series processors based on Zen 4 architecture. What is interesting about the shown specification is that the system was running an engineering sample of an upcoming Zen 4-based CPU with the latest storage technologies at impressive speeds. Using a Phison PS5026-E26 SSD controller, also called E26, the PCIe 5.0 SSD is powered by Micron's latest 232-layer TLC NAND flash. This new NAND technology will also bring greater densities to the market by promising higher endurance, higher read/write speeds, and better efficiency.

With AMD's upcoming AM5 platform, support for PCIe 5.0 SSDs is a welcome addition. And we today have some preliminary tests that show just how fast these SSDs can run. In CrystalDiskMark 8.0.4, it achieved over 10 GB/s in both read and write. We know that the E26 controller is capable of 12 GB/s speeds, so more fine-tuning is needed. Being an early sample, we expect final specifications to be better. The system is powered by an engineering sample of a six-core, twelve-threaded Zen 4 CPU running at unknown clocks, codenamed 100-000000593-20_Y. We can expect to see more of this technology once AMD's AM5 platform lands and Phison-powered SSDs hit the shelves in September.

An alleged AMD Ryzen 7000 pre-release sample was shown running DDR5-6400 memory speed, which is already a 23 percent memory overclock on top of the DDR5-5200 native memory clock speed support. We've known since April that the Ryzen 7000 "Zen 4" processors are being designed with a focus on good memory overclocking headroom, and this is the first instance of an enthusiast-class memory speed on this platform. The feat was pulled off by Toppc, a professional overclocker affiliated with MSI.

The most interesting aspect of this feat is the density. The machine is shown featuring 64 GB of memory—something currently only doable with 32 GB quad-rank (double-sided) DIMMs; or by populating all four slots on the motherboard with 16 GB dual-rank (single-sided) DIMMs, or a 2DPC setup, which would make this feat all the more impressive. The CPU-Z screenshot by Toppc reveals a DRAM clock of 3202 MHz (DDR5-6404), and timings of 32-38-38-96. The Socket AM5 Ryzen 7000 desktop processors only support DDR5 memory type (no backwards-compatibility with DDR4), and AMD states that since it is betting solely on DDR5 (with no DDR4 sidewheels), enthusiasts can expect a good memory overclocking experience.

MaxLinear Inc. today announced the availability of Panther III, the latest in the company's Panther series of storage accelerators. The company is showcasing this product at the Flash Memory Summit in Santa Clara, CA, August 2 - 4. Booth 111. Businesses need immediate access to larger and larger amounts of data and, at the same time, are faced with security and CAPEX costs challenges. With its 16 nanometer (nm) DPU architecture, Panther III provides breakthrough data reduction, encryption, deduplication, and data protection and sets a new standard in storage acceleration with a high throughput of 200 Gbps and ultra-low single-pass transformation latency.

Panther III opens new opportunities within the storage market, including all-flash-array and non-volatile memory express (NVMe) systems. As with previous generations of Panther products, Panther III offers powerful data reduction technology that intelligently offloads the CPU to open all tiers of storage to their full bandwidth potential with no CPU or software limitations. These capabilities enable intelligent and faster dataset delivery, high-performance analytics, and improved workload accuracy in fast-growing Edge to disaggregated computing of the public cloud.

Micron Technology, Inc. (NASDAQ: MU) commends and thanks the Biden Administration for their leadership and the bipartisan work of Congress for passing the "Chips and Science" legislation. This is a big step towards securing the future of semiconductor manufacturing in the United States and advancing American innovation and competitiveness for years to come.

This legislation will bring leading-edge semiconductor manufacturing to the U.S., creating tens of thousands of jobs and tens of billions of dollars of new investments - transforming U.S. semiconductor innovation and supply chain resilience.

CORSAIR, a world leader in enthusiast components for gamers, creators, and PC builders, today announced VENGEANCE RGB DDR5 memory, equipping the celebrated VENGEANCE RGB, a top choice for performance enthusiasts, with DDR5 technology. Optimized for the latest gaming PCs and workstations, and available in black or white color options, these modules deliver sensational DDR5 performance with stunning RGB style.

Launching initially in speeds up to 6,400MT/s and capacities up to 32 GB (2x16 GB), with frequencies up to 6,600 MT/s and 2x 32 GB kits available soon, VENGEANCE RGB DDR5 lights up your system with a modern new design illuminated by brilliant RGB, while delivering the higher frequencies, greater capacities, and faster performance of DDR5.

Sapphire introduced one of the first Radeon RX 6500 XT graphics cards in the retail channel to feature 8 GB of video memory, double that of the 4 GB standard for the SKU. The Sapphire Pulse RX 6500 XT 8 GB resembles the company's standard Pulse RX 6500 XT in design. At this point it's unclear how Sapphire went about deploying 8 GB of memory with the RX 6500 XT, given its narrow 64-bit GDDR6 memory interface.

Sapphire probably used four 16 Gbit memory chips, with two chips piggybacking a 32-bit memory channel. This would finally put the metal backplate to some use, as two of the chips could be located on the reverse side of the PCB. The memory ticks at the same 18 Gbps speed as the standard RX 6500 XT. The card's typical board power is increased to 130 W, up from the 107 W AMD reference. This is probably because the added memory chips, as well as slightly increased clock speeds of 2685 MHz (game clock), vs. 2615 MHz reference. The company didn't announce pricing or availability, but is planning a global launch for this card.

Thermaltake, the leading PC DIY premium brand for Case, Cooling, Gaming peripherals, and enthusiast memory solutions, is delighted to announce a new series of DDR5 RAM, including TOUGHRAM RC DDR5, TOUGHRAM Z-ONE RGB D5, and the latest TOUGHRAM XG RGB D5 in black and white. In order to provide gamers with the most up-to-date tech, our new DDR5 lineups come with higher capacities, faster speeds, and better overall performance compared with the previous generation and will be compatible with mainstream hardware and the latest Intel motherboards. Let's have a look at our latest offerings:

To begin with, we have TOUGHRAM XG RGB D5 in black and white with a frequency of 5600MT/s recently released and are available for purchase. The TOUGHRAM XG RGB D5 series features a Hynix chipset, the built-in PMIC, On-die ECC, and XMP 3.0 one-click overclocking. However, what makes the TOUGHRAM XG series stand out is its 16 ultra-bright addressable LEDs that are fully compatible with TT RGB Plus 2.0 and NeonMaker, enabling users to highlight the aesthetics they pursue without any limitation. The series also features 2oz, 10-layer PCB, and 10μ Gold Finger, further reinforcing not only the overall quality of the product but its enhanced durability, for the package that's pleasing to look at and enjoyable to game on. Moreover, with its doubled bank group architecture, the new TOUGHRAM XG RGB D5 enhances access availability and brings you higher capacities without lag, paving the way for next-gen memory. Aside from that, the latest TOUGHRAM XG RGB D5 is also compatible with TT AI Voice Control and Amazon Alexa, allowing users to freely configure lighting effects through their voice.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun sampling the industry's first 16-gigabit (Gb) Graphics Double Data Rate 6 (GDDR6) DRAM featuring 24-gigabit-per-second (Gbps) processing speeds. Built on Samsung's third-generation 10-nanometer-class (1z) process using extreme ultraviolet (EUV) technology, the new memory is designed to significantly advance the graphics performance for next-generation graphics cards (Video Graphics Arrays), laptops and game consoles, as well as artificial intelligence-based applications and high-performance computing (HPC) systems.

"The explosion of data now being driven by AI and the metaverse is pushing the need for greater graphics capabilities that can process massive data sets simultaneously, at extremely high speeds," said Daniel Lee, executive vice president of the Memory Product Planning Team at Samsung Electronics. "With our industry-first 24 Gbps GDDR6 now sampling, we look forward to validating the graphics DRAM on next-generation GPU platforms to bring it to market in time to meet an onslaught of new demand."

Hyperscalers such as Microsoft, Google, Amazon, etc., all run their cloud divisions with a specific goal. To provide their hardware to someone else in a form called instance and have the user pay for it by the hour. However, instances are usually bound by a specific CPU and memory configuration, which you can not configure yourself. But instead, you can only choose from the few available options that are listed. For example, when selecting one virtual CPU core, you get two GB of RAM and can go as high as you want with CPU cores. However, the available RAM will also double, even though you might not need it. When renting an instance, the allocated CPU cores and memory are yours until the instance is turned off.

And it is precisely this that hyperscalers are dealing with. Many instances don't fully utilize their DRAM, making the whole data center usage inefficient. Microsoft Azure, one of the largest cloud providers, measured that 50% of all VMs never touch 50% of their rented memory. This makes memory stranded in a rented VM, making it unusable for anything else.

At Azure, we find that a major contributor to DRAM inefficiency is platform-level memory stranding. Memory stranding occurs when a server's cores are fully rented to virtual machines (VMs), but unrented memory remains. With the cores exhausted, the remaining memory is unrentable on its own, and is thus stranded. Surprisingly, we find that up to 25% of DRAM may become stranded at any given moment.

Netac officially announced its release of Shadow II DDR 5 memory. Since the end of 2021, DDR5-related topics have maintained a high level of popularity. The first reason is that the market has been looking forward to new productivity tools for a long time. Second, compared with the previous generation, DDR5 has a revolutionary improvement in both appearance and performance, such as doubling the frequency and starting at 4800 MHz; Integrated PMIC power management chip, the voltage reduces to 1.1 V, and the power consumption is lower; On-die ECC error correction function is added to make the operation more stable.

Besides the first-line brands, Netac, an established storage manufacturer, is also actively deploying this field. Netac introduces the memory of Shadow II DDR 5 after Shadow RGB DDR5. Like Shadow Series, Shadow II DDR 5 is also positioned in the middle and high end, but without RGB lighting function. In terms of parameters, the frequency specification of 4800 MHz will be launched soon, and 8/16/32 GB*2 high-capacity strap specifications will be available, with a latency of 40-40-77 and a voltage of 1.1 V. Netac said that high-frequency specifications such as 5600 MHz and 6200 MHz will be launched in the future.

In response to the evolution of industrial DDR5 memory platform specifications, global memory brand TEAMGROUP has utilized its outstanding R&D capabilities to develop the first industrial U-DIMM, SO-DIMM, ECC-DIMM, and R-DIMM DDR5 memory modules at 5,600MHz clock speeds and run at 1.1V. They are expected to meet the diverse needs of next-generation platforms, Intel Raptor Lake and AMD Raphael-X, with high-performance specifications in line with JEDEC standards, accelerating the development of high-end industrial applications.

TEAMGROUP has been making strides in the industrial market for years and is focused on DDR5 memory applications. The company previously developed a complete range of DDR5 4,800 MHz modules, and now thanks to its industry-leading R&D, TEAMGROUP has successfully increased the frequencies of its DDR5 product line to 5,600 MHz. For added security in industrial applications, an SPD Write Protection feature was also adopted, which prevents SPD parameter changes caused by abnormal interference. With these enhancements, the risk of shutdown is greatly reduced and the memory is able to operate with substantially improved performance and stability.

To meet the demand for all types of multi-tasking, high-clock-speed experiences, and high-performance computing as well as to provide users with a full range of DDR5 upgrade options, TEAMGROUP, a global memory leader, has announced the release of its newly-updated ELITE SO-DIMM DDR5 and ELITE U-DIMM DDR5 5600 MHz high-speed memory modules. Both models will be available on Amazon in North America in early July, 2022. The high clock speed allows for higher-performance DDR5 memory for both desktop and laptop computers, enhancing user productivity and improving overall operational efficiency and storage performance. Consumers worldwide can also enjoy a more stable and efficient experience with lower power consumption provided by TEAMGROUP's ELITE memory.

In response to the growing demand for high-speed computing and digital technology, TEAMGROUP has introduced the upgraded ELITE SO-DIMM DDR5 5600 MHz and ELITE U-DIMM DDR5 5600 MHz memory modules, which boast higher frequencies and low power consumption. The updated specs of the ELITE memory fully meet the needs of business, learning, and entertainment applications on desktop and laptop computers. With a low operating voltage of 1.1 V, the power consumption of the memory is significantly reduced, extending the life of computers it is installed on. In addition, DDR5's Same-Bank Refresh feature and optimized IC structure can process double the amount of data simultaneously compared to DDR4, which enables computers to operate more smoothly while multi-tasking and significantly improves operating efficiency.

Apple M1 chips are a part of the Apple Silicon family that represents a new transition to Arm-based cores with new power and performance targets for Apple devices. A portion of building a processor is designing its security enclave, and today we have evidence that M1 processors got a new vulnerability. The PACMAN is a hardware attack that can bypass Pointer Authentication (PAC) on M1 processors. Security researchers took an existing concept of Spectre and its application in the x86 realm and now applied it to the Arm-based Apple silicon. PACMAN exploits a current software bug to perform pointer authentication bypass, which may lead to arbitrary code execution.

The vulnerability is a hardware/software co-design that exploits microarchitectural construction to execute arbitrary codes. PACMAN creates a PAC Oracle to check if a specific pointer matches its authentication. It must never crash if an incorrect guess is supplied and the attack brute-forces all the possible PAC values using the PAC Oracle. To suppress crashes, PAC Oracles are delivered speculatively. And to learn if the PAC value was correct, researchers used uArch side channeling. In the CPU resides translation lookaside buffers (TLBs), where PACMAN tries to load the pointer speculatively and verify success using the prime+probe technique. TLBs are filled with minimal addresses required to supply a particular TLB section. If any address is evicted from the TLB, it is likely a load success, and the bug can take over with a falsely authenticated memory address.

Silicon Power (SP) releases its first line of memory modules featuring the all-new, next-gen DDR5 technology. Designed for gaming, the XPOWER Zenith DDR5 UDIMM module is available in both RGB and non-RGB forms. Experience even faster frequencies, greater capacities, and lower voltages with the latest release in our Zenith Series, the XPOWER Zenith DDR5 UDIMM module. Take your gaming abilities to new high scores with turbo speeds ranging from 5200 MHz to 6000 MHz. It's available in 8 GB, 16 GB, and 32 GB module densities with double the banks and double the burst length compared to DDR4 to give hardcore gamers and overclockers the power to harness DDR5's game-changing performance.