Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC), its subsidiary in the Americas, today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a line-up of six new embedded NAND flash memory modules that offer full compliance with the latest e-MMC standard, and that are designed for application in a wide range of digital consumer products, including Smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

The new 64GB embedded device combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology, and also integrates a dedicated controller. Toshiba is the first company to succeed in combining 16 pieces of 32Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick. Full compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards supports standard interfacing and simplifies embedding in products, reducing development burdens on product manufacturers. Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities ranging from 2GB to 64GB. All integrate a controller to manage basic control functions for NAND applications, and are compatible with the latest e-MMC standard and its new features, including defining multiple storage areas and enhanced security features.

Corsair, a worldwide leader in high-performance computer and flash memory products, today announced the launch of its new Dominator GTX ultra-high performance DDR3 memory modules for Intel and AMD platforms, designed specifically for performance enthusiasts, gamers and extreme overclockers.

Corsair Dominator GTX modules are individually screened and tested on multiple high-performance Intel X58 and P55 chipset platforms to ensure that they operate at the incredible frequency of 2250MHz at low-latency timings of 8-8-8-24 at 1.65V. They are designed specifically for performance enthusiasts and overclockers who want to achieve the highest performance possible and to break benchmark world records.

Lexar Media, a leading global provider of memory products for digital media, today announced the availability of Crucial 4GB DDR3-1333MHz (PC3-10600) non-ECC UDIMM memory modules, enabling power users to max out their systems with 16GB of RAM. These new modules are compatible with the latest generation of Intel and AMD desktop processors - the Intel Core i5 and Intel Core i7 processors, as well as the AMD AM3 processors. This latest high-capacity Crucial DDR3 memory enables high-density memory installations that take advantage of 64-bit operating systems, including Microsoft Windows 7; less robust 32-bit operating systems only recognize a limited amount of installed RAM.

"Computer technology is constantly evolving, so we're committed to developing and offering a wide variety of Crucial memory products for both PC and Mac system users. Our new Crucial 4GB DDR3, high-density modules speak to this commitment; these products enable users to take advantage of newer 64-bit operating systems, as well as the latest generation of Intel and AMD processors," said Jim Jardine, Lexar Media's senior worldwide product manager.

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today released its series of very high capacity DDR3 memory: 8GB (2GBx4) and 12GB (2GBx6) memory kits.

G.Skill understands that families, business users, PC enthusiasts and gamers are often heavy multi-taskers too. Opening tens of applications to retain a workflow or several hundred photos after a family day out can put serious demands on the memory capacity, so installing 8-12GB becomes an investment in being able to do as much as you want, when you want.

Corsair, a worldwide leader in high-performance computer and flash memory products, today announced that it was voted Best Memory Manufacturer 2009 and Best PSU Manufacturer 2009 by the readers of Custom PC magazine and bit-tech.net.

Custom PC magazine and bit-tech.net, based in the United Kingdom, are two of the most highly respected and influential technology publications in the world. These awards were voted for by their audience of PC hardware enthusiasts and overclockers, and Corsair emerged as the clear winner in the Power Supply and Memory categories.

"Corsair winning the award for Best Power Supply Manufacturer for the third year running is a terrific achievement as it's a very competitive section of the marketplace where reliability and stability are key," said Alex Watson, Group Editor of Custom PC and bit-tech.net. "Corsair's award for Best Memory Manufacturer is a testament to the speed, value and design of its modules. The company also played a key role in this year's winning Dream PC, the Scan 3XS Jellyfish, supplying its chassis, solid-state drives and DDR3 memory. Congratulations to Corsair, the awards were well deserved."

GeIL announces the launch of the all new DDR3 Gaming Series Black Dragon Dual Channel & Quad Channel Kit to be added to the performance DDR3 memory module lineup.

The Gaming Series DDR3 Black Dragon will be available for the full range of speed with enhanced performance and stability by GeILs' DBT - Die-hard Burn-in Technology.

Hynix Semiconductor, Inc. has announced the Intel validation of 2Gb (Gigabit) DDR3 DRAM using 40nm class process technology.

Hynix's newly validated products are 2Gb DDR3 SDRAM component, 4GB (Gigabyte) DDR3 SODIMM (Small Outline Dual In-line Memory Module) and 2GB DDR3 UDIMM (Un-buffered Dual In-line Memory Module) at the operating speed of 1333MHz with 1.5V power supply.

The products can offer the maximum data transfer speed of 1867MHz with 16-bit I/O and 3.7GB/s (Gigabytes per second) bandwidth. The productivity of Hynix's 40nm class 2Gb DDR3 is increased by more than 60% over 50nm class process technology.

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), and Winbond Electronics Corp. today announced that they have signed a Memorandum of Understanding (MOU) for DRAM foundry services that will see Winbond manufacture DRAMs under contract to Elpida. The outsourcing agreement is the first step of a business partnership the two companies intend to pursue further.

The agreement pertains to the supply of GDDR3 and GDDR5 graphic DRAMs for Elpida. Prior to this agreement Winbond and Elpida have been working together to commercialize GDDR3 and GDDR5 DRAM products. Winbond is preparing to begin commercial production of these products by the end of 2009 while Elpida plans to begin purchasing the output in the first half of 2010.

Elpida Memory, Inc. and ProMOS Technologies announced today the signing of a DRAM foundry agreement. This agreement marks the beginning of mutually beneficial business cooperation.

According to the agreement, Elpida will provide advanced DRAM process and product technologies to ProMOS, while ProMOS will provide certain amount of manufacturing capacity at ProMOS' Taichung 300mm wafer fab to Elpida for the manufacturing of Elpida's advanced 1Gb DDR3 device. Trial runs will be completed in the first half of 2010, with mass production following in the second half of the same year.

Dr. M. L. Chen, President & Chairman of ProMOS Technologies, noted that Elpida has long been globally recognized as a leader in the development of leading edge DRAM technologies. The synergistic partnership built through this agreement will combine strengths from both companies; Elpida's 1Gb DDR3 device is among the most cost-competitive product in the industry, pairing well with ProMOS' strength in 300mm manufacturing. Dr. Chen further noted that through this agreement, ProMOS will be able to rapidly increase its capacity utilization rate at its Taichung 300mm facilities. With the recent turnaround in the DRAM market, ProMOS has embarked on the road to recovery.

The Mushkin Enhanced Design Team has once again pushed the envelope in regards to memory cooling and developed the new Copperhead Memory Cooling System. The side plates are comprised of pure copper, providing much more heat reduction than other metals.

One of the unique characteristics of the Copperhead System is the "Copperhead Watercooler". This is a quick and easy way to liquid-cool your memory modules. All that is needed is a quick, two-screw setup per memory module and Copperhead can be integrated into any existing watercooling system. The water cooler is available separately.

Memory manufacturer Kingmax announced the Hercules line of high-end DDR3 PC3-17600 memory modules for overclockers. Available in dual-channel kits for now, the Hercules can operate at 2200 MHz, with CAS latency of 10T, with DRAM voltage in the range of 1.5~1.7V. Optimized for Intel socket LGA-1156 processors, the modules support Intel Extreme Memory Profiles. Each kit includes two 2 GB modules. At 2200 MHz, each module provides a theoretical bandwidth of 17.6 GBps. There is no word on the availability or pricing.

Intel Corporation and Numonyx B.V. announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types. For the first time, researchers have demonstrated a 64Mb test chip that enables the ability to stack, or place, multiple layers of PCM arrays within a single die. These findings pave the way for building memory devices with greater capacity, lower power consumption and optimal space savings for random access non-volatile memory and storage applications.

The achievements are a result of an ongoing joint research program between Numonyx and Intel that has been focusing on the exploration of multi-layered or stacked PCM cell arrays. Intel and Numonyx researchers are now able to demonstrate a vertically integrated memory cell - called PCMS (phase change memory and switch). PCMS is comprised of one PCM element layered with a newly used Ovonic Threshold Switch (OTS) in a true cross point array. The ability to layer or stack arrays of PCMS provides the scalability to higher memory densities while maintaining the performance characteristics of PCM, a challenge that is becoming increasingly more difficult to maintain with traditional memory technologies.

G.Skill International Co. Ltd., manufacturer of extreme performance memory and solid-state storage with solid quality, has today released its ECO low voltage, 1.35V dual channel DDR3 memory for Intel Lynnfield Core i5 and Core i7 platforms.

Compared to the current DDR3 standard voltage of 1.65V, G.Skill's ECO memory modules require 18% less VDIMM. This can have a great contribution to power efficiency, environmental friendliness and ultimately saves G.Skill customers money. In addition, the lower voltages decreases a system's operating temperature, resulting in improved stability. G.Skill's own internal lab tests have revealed, 1.35V memory modules produce 16% lower temperatures than standard 1.65V memory.

Overclocker/Gamer and all enthusiasts will be happy about these 2x2GB DDR3 high end memory kits with high clock rate for the P55 platform. EXCELERAM stands out due to its unrivalled price for high end memory - also for these new high end kits.

EXCELERAM offers 10 years warranty for his memory throughout Europe. Fast and direct RMA processing for endcustomers is warranted through Ironstone Distribution GmbH. Handling time normally is 5 working days. All memory is 100% hand-tested on mainboards - thereby the DOA rate (Dead On Arrival) would be almost 0%.

Georgios Kopanidis - COO of EXCELERAM says: "A couple of months we weren't in the limelight. In this time we set the course to strengthen our team of memory specialists in Germany. In the next months we will announce many new great products with our well known quality. Know-how and man-power is abound. We also will put more effort into the Overclocking segment."

Elpida Memory, Inc., Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it had finished development of the smallest high-speed low-power 40nm 2-gigabit DDR3 SDRAM in the DRAM industry.

The new 2-gigabit DDR3 SDRAM uses a smaller chip size to achieve a 44% higher chip yield per wafer compared with Elpida's 50nm DDR3 SDRAM and a 100% yield for DDR3 products that operate at 1.6Gbps, the highest speed standard for current DDR3. Compared with 50nm products, it uses about two-thirds less current and supports 1.2V/1.35V operation as well as DDR3 standard 1.5V, thus reducing power consumption by as much as 45%.

Patriot Memory, a global pioneer in high-performance memory, NAND flash and computer technology, today announced the release of the Viper II DDR2 memory kits with Futuremark's 3DMark Vantage software.

Patriot Memory and Futuremark have teamed up once again to offer PC enthusiasts and overclockers the tools necessary to build the ultimate performance system. Futuremark's 3DMark Vantage, the world's #1 benchmarking software, offers consumers the chance to see how their system performs and stacks up against worldwide contention.

GEIL is yet another company to undertake a green initiative with an appropriately branded product that appeals to the environment-conscious computer enthusiast (apparently the species does exist). After a similar line of memory kits with its DDR2 segment, GEIL announced four new dual-channel DDR3 memory kits based on capacity and speeds. The two come in 4 GB (2x 2 GB) and 2 GB (2x 1 GB) capacities, and two speeds each: PC3-8500 (DDR3 1066 MHz) and PC3-10660 (DDR3 1333 MHz). The biggest USP of these kits are that they offer JEDEC standard memory timings at module voltages 10~20 percent lower than JEDEC specifications. The PC3-10660 kits runs at 9-9-9-24, while the PC3-8500 ones do 8-8-8-20, both at a mere 1.3 V. This allows GEIL to do away with a heatspreader. The modules go through GEIL's rigorous quality-assurance testings and hence carry lifetime warranties. Another part of the green initiative is the product packing, which makes use of recycled paper, a trend which is catching up. GEIL will deck up shelves with these kits shortly, so you could know the price. Model number details follow:

• GG32GB1066C8DC - 2x 1 GB, PC3-8500, 8-8-8-20, 1.3 V
• GG34GB1066C8DC - 2x 2 GB, PC3-8500, 8-8-8-20, 1.3 V
• GG32GB1333C9DC - 2x 1 GB, PC3-10660, 9-9-9-24, 1.3 V
• GG32GB1333C9DC - 2x 2 GB, PC3-10660, 9-9-9-24, 1.3 V

Transcend Information (Transcend), a worldwide leader in storage and multimedia products, today released a new line of server-grade DDR3 ECC DIMM and Registered DIMM premium memory modules equipped with thermal sensors. This advanced innovation in thermal monitoring technology can greatly enhance memory reliability, efficiency, and overall system stability, making these new modules perfect for use in dedicated servers as well as workstations.
For high-end systems that constantly process huge amounts of data under non-stop operating conditions, CPU speed regulation and various other techniques to prevent overheating have become increasingly important in hardware design. In order to provide increased performance, Transcend now offers server-grade DDR3 modules that come equipped with an advanced thermal sensor. This allows motherboard chipsets to monitor the exact temperature of each memory module and adjust the memory load accordingly, ensuring the best possible system performance while at the same time protecting the DRAM modules from potentially catastrophic failure and compromised system stability.

Micron Technology today announced mass production of new NAND flash memory products using its award-winning 34-nanometer (nm) process technology. As consumers demand increased capacity to store more music, videos, photos, and applications in ever smaller portable electronic devices, manufacturers need a storage solution that delivers on capacity, performance, and size. Micron's new 16- and 32-gigabit (Gb) NAND chips pair large capacity with performance, providing a compelling solution for today's demanding portable storage requirements that are tailored to end-customer product dimensions.
The newly architected 32Gb multi-level cell (MLC) NAND chip is 17 percent smaller than Micron's first-generation 32Gb chip. The 16Gb MLC NAND chip, at just 84mm², provides high-capacity in an ultra tiny package. Micron is also now sampling 8- and 16Gb single-level cell (SLC) NAND chips using the 34nm process.

Samsung Electronics, the world leader in advanced memory technology, announced today that it has developed the world's first 32 Gigabyte (GB) DDR3 module - for use in server systems. The new module operates at 1.35-volts, in support of the global trend to cut power usage in mass storage computing environments.
"Compared to the 8GB memory modules used in today's servers, our new module packs an eco-sensitive wallop with four times the density at significantly reduced power levels and no increase in the overall footprint," said Jim Elliott, vice president, memory marketing, Samsung Semiconductor, Inc. "For data centers, it's a powerhouse in energy efficiency and performance," he added.

Modern portable USB flash drives tend to become equal in capacity to solid-state drives, as Patriot Memory is today introducing its highest-capacity flash drive yet, the 128 GB Xporter Magnum. With more than twice the capacity of most USB drives, the Xporter Magnum features a USB 2.0 high speed interface, is Windows ReadyBoost ready, and provides read speed of up to 31 MB/s. Constructed with a durable water and shock resistant housing and backed by a lifetime warranty, the Xporter XT Boost ranks among the best offerings users can find. The 128 GB Patriot Xporter Magnum drive is yet to be priced.

Corsair, a worldwide leader in high-performance computer memory, power supplies and flash memory products, including solid-state drives, today announced the launch of Corsair Extended Cooling Fins for triple-channel Dominator and Dominator GT memory kits using Corsair's DHX+ technology.
Corsair memory modules using DHX+ (Dual-path Heat eXchange) technology - a patent-pending cooling approach that uniquely removes heat from both the memory ICs and print circuit board - feature removal cooling fins that allow for modular cooling accessories to be fitted. These include the recently-announced Hydro Series H30 water-block and Ice Series T30 thermo-electric cooler, which are now joined by the extended cooling fins.

We got a good look at the new Colossus SSD from OCZ today. It is a 3.5 inch version, which is available with up to an one TB capacity. It combines two identical SSDs in a RAID 0 array with up to 256MB/s read and write performance and a hefty price tag.

Taipei-based Team Group has just announced the addition of two new triple channel memory kits to its Xtreem series product line-up. The upcoming 3 and 6GB PC3-16000 overclocking-ready kits are made up of modules equipped with black aluminum heatsinks with a exquisite texture and a distinctive X-logo design. They are rated at 2000 MHz with 7-8-7-20 latencies at 1.65V. The kits support XMP (Extreme Memory Profiles) and are backed by a lifetime warranty.

The current No. 3 global memory maker Micron Technology is said to enter the graphics memory business, fighting against Samsung and Hynix. Micron will make the chips mainly for NVIDIA and ATI video cards.
"Our upcoming 50-nanometer technology is very competitive when it comes to power consumption and performance," Robert Feurle, Micron's VP of DRAM marketing said. "I think it's a good point in time to begin discussions with big enablers NVIDIA and AMD and get started with some design-ins," Feurle said. "No decision has been made yet but we're looking into that very seriously," he added.
Plans are to start production of GDDR3 memory with speeds of 1600 MHz and up. After that a possible transition to GDDR5 manufacturing will be made. Unfortunately, that's all there is to know for now, Micron is mum on all other details.