According to TechNews Taiwan, Intel has made significant progress in implementing ASML's cutting-edge High-NA EUV lithography technology. The company has successfully completed the assembly of its second High-NA "Twinscan EXE" EUV system at its Portland facility, as confirmed by Mark Phillips, Intel's Director of Lithography Hardware. Christophe Fouquet, CEO of ASML, highlighted that the new assembly process allows for direct installation at the customer's site, eliminating the need for disassembly and reassembly, thus saving time and resources. Phillips expressed enthusiasm about the technology, noting that the improvements offered by High-NA EUV machines have surpassed expectations compared to standard EUV systems. Given the massive $380 million price point of these High-NA systems, any savings are valuable in the process.

The rapid progress in installation and implementation of High-NA EUV technology at Intel's facilities positions the company strongly for production transition. With all necessary infrastructure in place and inspections of High-NA EUV masks already underway, Intel aims to have its Intel 14A process in mass production by 2026-2027. As Intel leads in High-NA EUV adoption, other industry giants are following suit. ASML plans to deliver High-NA EUV systems to TSMC by year-end, with rumors suggesting that TSMC's first system will possibly arrive in September. Samsung has also committed to the technology, although recent reports indicate a potential reduction in their procurement plans. Additionally, this development has sparked discussions about the future of photoresist technology, with Phillips suggesting that while Chemically Amplified Resist (CAR) is currently sufficient, future advancements may require metal oxide photoresists. This provides a small insight into Intel's future nodes.