TrendForce's latest report reveals that despite DRAM suppliers' efforts to trim inventories, they have yet to reach healthy ranges. As they continue to improve their lose situations by boosting capacity utilization rates, the overall demand outlook for this year remains tepid. Additionally, significant price increases by suppliers since 4Q23 are expected to further diminish the momentum for inventory restocking. As a result, DRAM contract prices for the second quarter are projected to see a modest increase of 3-8%.

The shift toward DDR5-compatible CPUs is set to drive an increase in PC DRAM demand in the second quarter. As manufacturers move toward more advanced, cost-efficient production processes for DDR5, their profitability is expected to rise significantly. This anticipation of higher DRAM prices in 1H24 has led to suppliers to aim for price increases in Q2, targeting a 3-8% hike in PC DRAM contract prices. Notably, even though DDR5 prices have already seen a notable rise in Q1—exceeding the average increase for other products—the expected emergence of AI PC demand may lead to a slight moderation in DDR5 price increases in Q2.

Ahead of the 2024 Optical Fiber Communication Conference (OFC), MediaTek (last week) announced it is launching a next-generation custom ASIC design platform that includes the heterogeneous integration of both high-speed electrical and optical I/Os in the same ASIC implementation. MediaTek will be demonstrating a serviceable socketed implementation that combines 8x800G electrical links and 8x800G optical links for a more flexible deployment. It integrates both MediaTek's in-house SerDes for electrical I/O as well as co-packaged Odin optical engines from Ranovus for optical I/O. Leveraging the heterogeneous solution that includes both 112G LR SerDes and optical modules, this CPO demonstration delivers reduced board space and device costs, boosts bandwidth density, and lowers system power by up to 50% compared to existing solutions.

Additionally, Ranovus' Odin optical engine has the option to provide either internal or external laser optical modules to better align with practical usage scenarios. MediaTek's ASIC experience and capabilities in the 3 nm advanced process, 2.5D and 3D advanced packaging, thermal management, and reliability, combined with optical experience, makes it possible for customers to access the latest technology for high-performance computing (HPC), AI/ML and data center networking.

SK hynix is displaying its latest AI memory technologies at NVIDIA's GPU Technology Conference (GTC) 2024 held in San Jose from March 18-21. The annual AI developer conference is proceeding as an in-person event for the first time since the start of the pandemic, welcoming industry officials, tech decision makers, and business leaders. At the event, SK hynix is showcasing new memory solutions for AI and data centers alongside its established products.

Showcasing the Industry's Highest Standard of AI Memory
The AI revolution has continued to pick up pace as AI technologies spread their reach into various industries. In response, SK hynix is developing AI memory solutions capable of handling the vast amounts of data and processing power required by AI. At GTC 2024, the company is displaying some of these products, including its 12-layer HBM3E and Compute Express Link (CXL)1, under the slogan "Memory, The Power of AI". HBM3E, the fifth generation of HBM2, is the highest-specification DRAM for AI applications on the market. It offers the industry's highest capacity of 36 gigabytes (GB), a processing speed of 1.18 terabytes (TB) per second, and exceptional heat dissipation, making it particularly suitable for AI systems. On March 19, SK hynix announced it had become the first in the industry to mass-produce HBM3E.

SK hynix unveiled a new consumer product based on its latest solid-state drive (SSD), PCB01, which boasts industry-leading performance levels at GPU Technology Conference (GTC) 2024. Hosted by NVIDIA in San Jose, California from March 18-21, GTC is one of the world's leading conferences for AI developers. Applied to on-device AI PCs, PCB01 is a PCIe fifth-generation SSD which recently had its performance and reliability verified by a major global customer. After completing product development in the first half of 2024, SK hynix plans to launch two versions of PCB01 by the end of the year which target both major technology companies and general consumers.

Optimized for AI PCs, Capable of Loading LLMs Within One Second
Offering the industry's highest sequential read speed of 14 gigabytes per second (GB/s) and a sequential write speed of 12 GB/s, PCB01 doubles the speed specifications of its previous generation. This enables the loading of LLMs required for AI learning and inference in less than one second. To make on-device AIs operational, PC manufacturers create a structure that stores an LLM in the PC's internal storage and quickly transfers the data to DRAMs for AI tasks. In this process, the PCB01 inside the PC efficiently supports the loading of LLMs. SK hynix expects these characteristics of its latest SSD to greatly increase the speed and quality of on-device AIs.

MemVerge, a leader in AI-first Big Memory Software, has joined forces with Micron to unveil a groundbreaking solution that leverages intelligent tiering of CXL memory, boosting the performance of large language models (LLMs) by offloading from GPU HBM to CXL memory. This innovative collaboration is being showcased in Micron booth #1030 at GTC, where attendees can witness firsthand the transformative impact of tiered memory on AI workloads.

Charles Fan, CEO and Co-founder of MemVerge, emphasized the critical importance of overcoming the bottleneck of HBM capacity. "Scaling LLM performance cost-effectively means keeping the GPUs fed with data," stated Fan. "Our demo at GTC demonstrates that pools of tiered memory not only drive performance higher but also maximize the utilization of precious GPU resources."

TrendForce reports that significant capital investments have occurred in the memory sector due to the high ASP and profitability of HBM. Senior Vice President Avril Wu notes that by the end of 2024, the DRAM industry is expected to allocate approximately 250K/m (14%) of total capacity to producing HBM TSV, with an estimated annual supply bit growth of around 260%. Additionally, HBM's revenue share within the DRAM industry—around 8.4% in 2023—is projected to increase to 20.1% by the end of 2024.

HBM supply tightens with order volumes rising continuously into 2024
Wu explains that in terms of production differences between HBM and DDR5, the die size of HBM is generally 35-45% larger than DDR5 of the same process and capacity (for example, 24Gb compared to 24Gb). The yield rate (including TSV packaging) for HBM is approximately 20-30% lower than that of DDR5, and the production cycle (including TSV) is 1.5 to 2 months longer than DDR5.

Industry insiders reckon that Samsung Electronics is transitioning to molded underfill (MR-MUF) production techniques—rival memory manufacturer, SK Hynix, champions this chip making technology. A Reuters exclusive has cited claims made by five industry moles—they believe that Samsung is reacting to underwhelming HBM production yields. The publication proposes that: "one of the reasons Samsung has fallen behind (competing producers) is its decision to stick with chip making technology called non-conductive film (NCF) that causes some production issues, while Hynix switched to the mass reflow molded underfill (MR-MUF) method to address NCF's weakness." The report suggests that Samsung is in the process of ordering new MUF-related equipment.

One anonymous source stated: "Samsung had to do something to ramp up its HBM (production) yields... adopting MUF technique is a little bit of swallow-your-pride type thing for (them), because it ended up following the technique first used by SK Hynix." Reuters managed to extract a response from the giant South Korean multinational—a company spokesperson stated: "we are carrying out our HBM3E product business as planned." They indicated that NCF technology remains in place as an "optimal solution." Post-publication, another official response was issued: "rumors that Samsung will apply MR-MUF to its HBM production are not true." Insiders propose a long testing phase—Samsung is rumored to be sourcing MUF materials, but mass production is not expected to start this year. Three insiders allege that Samsung is planning to "use both NCF and MUF techniques" for a new-generation HBM chip.

TrendForce highlights the current landscape of the HBM market, which as of early 2024, is primarily focused on HBM3. NVIDIA's upcoming B100 or H200 models will incorporate advanced HBM3e, signaling the next step in memory technology. The challenge, however, is the supply bottleneck caused by both CoWoS packaging constraints and the inherently long production cycle of HBM—extending the timeline from wafer initiation to the final product beyond two quarters.

The current HBM3 supply for NVIDIA's H100 solution is primarily met by SK hynix, leading to a supply shortfall in meeting burgeoning AI market demands. Samsung's entry into NVIDIA's supply chain with its 1Znm HBM3 products in late 2023, though initially minor, signifies its breakthrough in this segment.

TrendForce reports a 29.6% QoQ in DRAM industry revenue for 4Q23, reaching US$17.46 billion, propelled by revitalized stockpiling efforts and strategic production control by leading manufacturers. Looking ahead to 1Q24, the intent to further enhance profitability is evident, with a projected near 20% increase in DRAM contract prices—albeit with a slight decrease in shipment volumes to the traditional off-season.

Samsung led the pack with the highest revenue growth among the top manufacturers in Q4 as it jumped 50% QoQ to hit $7.95 billion, largely due to a surge in 1alpha nm DDR5 shipments, boosting server DRAM shipments by over 60%. SK hynix saw a modest 1-3% rise in shipment volumes but benefited from the pricing advantage of HBM and DDR5, especially from high-density server DRAM modules, leading to a 17-19% increase in ASP and a 20.2% rise in revenue to $5.56 billion. Micron witnessed growth in both volume and price, with a 4-6% increase in each, resulting in a more moderate revenue growth of 8.9%, totaling $3.35 billion for the quarter due to its comparatively lower share of DDR5 and HBM.

Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed HBM3E 12H, the industry's first 12-stack HBM3E DRAM and the highest-capacity HBM product to date. Samsung's HBM3E 12H provides an all-time high bandwidth of up to 1,280 gigabytes per second (GB/s) and an industry-leading capacity of 36 gigabytes (GB). In comparison to the 8-stack HBM3 8H, both aspects have improved by more than 50%.

"The industry's AI service providers are increasingly requiring HBM with higher capacity, and our new HBM3E 12H product has been designed to answer that need," said Yongcheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "This new memory solution forms part of our drive toward developing core technologies for high-stack HBM and providing technological leadership for the high-capacity HBM market in the AI era."

SK Hynix Vice President Kitae Kim presides over the company's HBM Sales & Marketing (S&M) department—an official leadership blog profile reveals that the executive played a key role in making the South Korean supplier's high bandwidth memory (HBM) product line "a superstar of the semiconductor memory industry in 2023." Growing demand for powerful AI processors has placed SK Hynix in a more comfortable position, following recessive spells—including a major sales downturn in 2022. NVIDIA is the market leader in AI processing chips, and many of its flagship enterprise designs are fitted with cutting-edge SK Hynix memory modules. Kim noted that his firm has many notable international clients: "HBM is a revolutionary product which has challenged the notion that semiconductor memory is only one part of an overall system...in particular, SK Hynix's HBM has outstanding competitiveness. Our advanced technology is highly sought after by global tech companies."

The VP outlined how artificial intelligence industries are fuelling innovations: "With the diversification and advancement of generative AI services, demand for HBM, an AI memory solution, has also exploded. HBM, with its high-performance and high-capacity characteristics, is a monumental product that shakes the conventional wisdom that memory semiconductors are only a part of the overall system. In particular, SK Hynix HBM's competitiveness is outstanding." Business is booming, so much so that nothing can be added to this year's HBM order books: "Proactively securing customer purchase volumes and negotiating more favorable conditions for our high-quality products are the basics of semiconductor sales operations. With excellent products in hand, it's a matter of speed. Our planned production volume of HBM this year has already sold out. Although 2024 has just begun, we've already started preparing for 2025 to stay ahead of the market."

SK Hynix has unveiled ambitious High Bandwidth Memory (HBM) roadmaps at SEMICON Korea 2024. Vice President Kim Chun-hwan announced plans to mass produce the cutting-edge HBM3E within the first half of 2024, touting 8-layer stack samples already supplied to clients. This iteration makes major strides towards fulfilling surging data bandwidth demands, offering 1.2 TB/s per stack and 7.2 TB/s in a 6-stack configuration. VP Kim Chun-hwan cites the rapid emergence of generative AI, forecasted for 35% CAGR, as a key driver. He warns that "fierce survival competition" lies ahead across the semiconductor industry amidst rising customer expectations. With limits approaching on conventional process node shrinks, attention is shifting to next-generation memory architectures and materials to unleash performance.

SK Hynix has already initiated HBM4 development for sampling in 2025 and mass production the following year. According to Micron, HBM4 will leverage a wider 2048-bit interface compared to previous HBM generations to increase per-stack theoretical peak memory bandwidth to over 1.5 TB/s. To achieve these high bandwidths while maintaining reasonable power consumption, HBM4 is targeting a data transfer rate of around 6 GT/s. The wider interface and 6 GT/s speeds allow HBM4 to push bandwidth boundaries significantly compared to prior HBM versions, fueling the need for high-performance computing and AI workloads. But power efficiency is carefully balanced by avoiding impractically high transfer rates. Additionally, Samsung is aligned on a similar 2025/2026 timeline. Beyond pushing bandwidth boundaries, custom HBM solutions will become increasingly crucial. Samsung executive Jaejune Kim reveals that over half its HBM volume already comprises specialized products. Further tailoring HBM4 to individual client needs through logic integration presents an opportunity to cement leadership. As AI workloads evolve at breakneck speeds, memory innovation must keep pace. With HBM3E prepping for launch and HBM4 in the plan, SK Hynix and Samsung are gearing up for the challenges ahead.

Samsung, SK hynix, and Micron are considered to be the top manufacturing sources of High Bandwidth Memory (HBM)—the HBM3 and HBM3E standards are becoming increasingly in demand, due to a widespread deployment of GPUs and accelerators by generative AI companies. Taiwan's Commercial Times proposes that there is an ongoing shortage of HBM components—but this presents a growth opportunity for smaller manufacturers in the region. Naturally, the big name producers are expected to dive in head first with the development of next generation models. The aforementioned financial news article cites research conducted by the Gartner group—they predict that the HBM market will hit an all-time high of $4.976 billion (USD) by 2025.

This estimate is almost double that of projected revenues (just over $2 billion) generated by the HBM market in 2023—the explosive growth of generative AI applications has "boosted" demand for the most performant memory standards. The Commercial Times report states that SK Hynix is the current HBM3E leader, with Micron and Samsung trailing behind—industry experts believe that stragglers will need to "expand HBM production capacity" in order to stay competitive. SK Hynix has shacked up with NVIDIA—the GH200 Grace Hopper platform was unveiled last summer; outfitted with the South Korean firm's HBM3e parts. In a similar timeframe, Samsung was named as AMD's preferred supplier of HBM3 packages—as featured within the recently launched Instinct MI300X accelerator. NVIDIA's HBM3E deal with SK Hynix is believed to extend to the internal makeup of Blackwell GB100 data-center GPUs. The HBM4 memory standard is expected to be the next major battleground for the industry's hardest hitters.

TrendForce's latest analysis reveals that the downswing of DRAM contract prices, which had lasted for eight consecutive quarters since 4Q21, was finally reversed in 4Q23. Likewise, NAND Flash rebounded in 3Q23 after four quarters of decline. The persistence of this rally in memory prices during 2024 will largely hinge on suppliers' ongoing and effective control over their capacity utilization rates.

According to TrendForce Senior Research Vice President, Avril Wu, the first quarter of this year is already shaping up to be a season of growth, with TrendForce confirming its initial projections: a hike of around 13-18% QoQ for DRAM contract prices and a hike of 18-23% for NAND Flash contract prices. Despite a generally conservative outlook for overall market demand in 2Q24, suppliers in both DRAM and NAND Flash markets have begun raising their capacity utilization rates since the end of 4Q23. Furthermore, NAND Flash buyers are anticipated to complete their inventory restocking in advance in 1Q24. Due to the rise in capacity utilization rates and earlier restocking efforts, leading to a more moderated QoQ price increase of 3-8% for both DRAM and NAND Flash contract prices for 2Q24.

TrendForce reports that the DRAM contract prices are estimated to increase by approximately 13-18% in 1Q24 with mobile DRAM leading the surge. It appears that due to the unclear demand outlook for the entire year of 2024, manufacturers believe that sustained production cuts are necessary to maintain the supply-demand balance in the memory industry.

PC DRAM: The market is buzzing with unfilled DDR5 orders, while savvy buyers brace for a continued surge in DDR4 prices, keeping procurement engines running. This trend, however, is shadowed by a gradual industry pivot toward DDR5, casting uncertainty over the expansion of DDR4 bit procurement volumes. Despite this, both DDR4 and DDR5 prices have yet to hit the target set by manufacturers, and buyers seem ready to ride the wave of price hikes into 1Q24. This sets the stage for an estimated 10-15% in PC DRAM contract prices, with DDR5 poised to take the lead over DDR4 in this pricing rally.

TrendForce investigations reveal a significant leap in the DRAM industry for 3Q23, with total revenues soaring to US$13.48 billion—marking 18% QoQ growth. This surge is attributed to a gradual resurgence in demand, prompting buyers to re-energize their procurement activities. Looking ahead to Q4, while suppliers are firmly set on price hikes, with DRAM contract prices expected to rise by approximately 13-18%, demand recovery will not be as robust as in previous peak seasons. Overall, while there is demand for stockpiling, procurement for the server sector remains tentative due to high inventory levels, suggesting limited growth in DRAM industry shipments for Q4.

Three major manufacturers witnessed Q3 revenue growth. Samsung's revenue increased by about 15.9% to US$5.25 billion thanks to stable demand for high-capacity products fueled by AI advancements and the rollout of its 1alpha nm DDR5. SK hynix showcased the most notable growth among manufacturers with a 34.4% increase, reaching about US$4.626 billion and significantly narrowing its market share gap with Samsung to less than 5%. Micron's revenue rose by approximately 4.2% to US$3.075 billion—despite a slight drop in ASP—supported by an upswing in demand and shipment volumes.

Amazon Web Services, Inc. (AWS), an Amazon.com, Inc. company (NASDAQ: AMZN), and NVIDIA (NASDAQ: NVDA) today announced an expansion of their strategic collaboration to deliver the most-advanced infrastructure, software and services to power customers' generative artificial intelligence (AI) innovations. The companies will bring together the best of NVIDIA and AWS technologies—from NVIDIA's newest multi-node systems featuring next-generation GPUs, CPUs and AI software, to AWS Nitro System advanced virtualization and security, Elastic Fabric Adapter (EFA) interconnect, and UltraCluster scalability—that are ideal for training foundation models and building generative AI applications.

The expanded collaboration builds on a longstanding relationship that has fueled the generative AI era by offering early machine learning (ML) pioneers the compute performance required to advance the state-of-the-art in these technologies.

TrendForce's latest research into the HBM market indicates that NVIDIA plans to diversify its HBM suppliers for more robust and efficient supply chain management. Samsung's HBM3 (24 GB) is anticipated to complete verification with NVIDIA by December this year. The progress of HBM3e, as outlined in the timeline below, shows that Micron provided its 8hi (24 GB) samples to NVIDIA by the end of July, SK hynix in mid-August, and Samsung in early October.

Given the intricacy of the HBM verification process—estimated to take two quarters—TrendForce expects that some manufacturers might learn preliminary HBM3e results by the end of 2023. However, it's generally anticipated that major manufacturers will have definite results by 1Q24. Notably, the outcomes will influence NVIDIA's procurement decisions for 2024, as final evaluations are still underway.

Supermicro, Inc., a Total IT Solution Provider for AI, Cloud, Storage, and 5G/Edge, is expanding its AI reach with the upcoming support for the new NVIDIA HGX H200 built with H200 Tensor Core GPUs. Supermicro's industry leading AI platforms, including 8U and 4U Universal GPU Systems, are drop-in ready for the HGX H200 8-GPU, 4-GPU, and with nearly 2x capacity and 1.4x higher bandwidth HBM3e memory compared to the NVIDIA H100 Tensor Core GPU. In addition, the broadest portfolio of Supermicro NVIDIA MGX systems supports the upcoming NVIDIA Grace Hopper Superchip with HBM3e memory. With unprecedented performance, scalability, and reliability, Supermicro's rack scale AI solutions accelerate the performance of computationally intensive generative AI, large language Model (LLM) training, and HPC applications while meeting the evolving demands of growing model sizes. Using the building block architecture, Supermicro can quickly bring new technology to market, enabling customers to become more productive sooner.

Supermicro is also introducing the industry's highest density server with NVIDIA HGX H100 8-GPUs systems in a liquid cooled 4U system, utilizing the latest Supermicro liquid cooling solution. The industry's most compact high performance GPU server enables data center operators to reduce footprints and energy costs while offering the highest performance AI training capacity available in a single rack. With the highest density GPU systems, organizations can reduce their TCO by leveraging cutting-edge liquid cooling solutions.

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today announced that the Rambus HBM3 Memory Controller IP now delivers up to 9.6 Gigabits per second (Gbps) performance supporting the continued evolution of the HBM3 standard. With a 50% increase over the HBM3 Gen 1 data rate of 6.4 Gbps, the Rambus HBM3 Memory Controller can enable a total memory throughput of over 1.2 Terabytes per second (TB/s) for training of recommender systems, generative AI and other demanding data center workloads.

"HBM3 is the memory of choice for AI/ML training, with large language models requiring the constant advancement of high-performance memory technologies," said Neeraj Paliwal, general manager of Silicon IP at Rambus. "Thanks to Rambus innovation and engineering excellence, we're delivering the industry's leading-edge performance of 9.6 Gbps in our HBM3 Memory Controller IP."

SK hynix Inc., today reported the financial results for the third quarter ended September 30, 2023. The company recorded revenues of 9.066 trillion won, operating losses of 1.792 trillion won and net losses of 2.185 trillion won in the three-month period. The operating and net margins were a negative 20% and 24%, respectively. After bottoming out in the first quarter, the business has been on a steady recovery track, helped by growing demand for products such as high-performance memory chips, the company said.

"Revenues grew 24%, while operating losses narrowed 38%, compared with the previous quarter, thanks to strong demand for high-performance mobile flagship products and HBM3, a key product for AI applications, and high-capacity DDR5," the company said, adding that a turnaround of the DRAM business following two quarters of losses is particularly hopeful. SK hynix attributed the growth in sales to increased shipments of both DRAM and NAND and a rise in the average selling price.

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications—including the cloud, edge devices and automotive vehicles.

Attended by about 600 customers, partners and industry experts, the event served as a platform for Samsung executives to expand on the company's vision for "Memory Reimagined," covering long-term plans to continue its memory technology leadership, outlook on market trends and sustainability goals. The company also presented new product innovations such as the HBM3E Shinebolt, LPDDR5X CAMM2 and Detachable AutoSSD.

SK hynix showcased its next-generation memory semiconductor technologies and solutions at the OCP Global Summit 2023 held in San Jose, California from October 17-19. The OCP Global Summit is an annual event hosted by the world's largest data center technology community, the Open Compute Project (OCP), where industry experts gather to share various technologies and visions. This year, SK hynix and its subsidiary Solidigm showcased advanced semiconductor memory products that will lead the AI era under the slogan "United Through Technology".

SK hynix presented a broad range of its solutions at the summit, including its leading HBM(HBM3/3E), CXL, and AiM products for generative AI. The company also unveiled some of the latest additions to its product portfolio including its DDR5 RDIMM, MCR DIMM, enterprise SSD (eSSD), and LPDDR CAMM devices. Visitors to the HBM exhibit could see HBM3, which is utilized in NVIDIA's H100, a high-performance GPU for AI, and also check out the next-generation HBM3E. Due to their low-power consumption and ultra-high-performance, these HBM solutions are more eco-friendly and are particularly suitable for power-hungry AI server systems.

According to the editorial blog post published on the Samsung blog by SangJoon Hwang, Executive Vice President and Head of the DRAM Product & Technology Team at Samsung Electronics, we have information that High-Bandwidth Memory 4 (HBM4) is coming in 2025. In the recent timeline of HBM development, we saw the first appearance of HBM memory in 2015 with the AMD Radeon R9 Fury X. The second-generation HBM2 appeared with NVIDIA Tesla P100 in 2016, and the third-generation HBM3 saw the light of the day with NVIDIA Hopper GH100 GPU in 2022. Currently, Samsung has developed 9.8 Gbps HBM3E memory, which will start sampling to customers soon.

However, Samsung is more ambitious with development timelines this time, and the company expects to announce HBM4 in 2025, possibly with commercial products in the same calendar year. Interestingly, the HBM4 memory will have some technology optimized for high thermal properties, such as non-conductive film (NCF) assembly and hybrid copper bonding (HCB). The NCF is a polymer layer that enhances the stability of micro bumps and TSVs in the chip, so memory solder bump dies are protected from shock. Hybrid copper bonding is an advanced semiconductor packaging method that creates direct copper-to-copper connections between semiconductor components, enabling high-density, 3D-like packaging. It offers high I/O density, enhanced bandwidth, and improved power efficiency. It uses a copper layer as a conductor and oxide insulator instead of regular micro bumps to increase the connection density needed for HBM-like structures.

Avicena, a privately held company headquartered in Sunnyvale, CA, is demonstrating its LightBundle multi-Tbps chip-to-chip interconnect technology at the European Conference for Optical Communications (ECOC) 2023 in Glasgow, Scotland (https://www.ecocexhibition.com/). Avicena's microLED-based LightBundle architecture breaks new ground by unlocking the performance of processors, memory and sensors, removing key bandwidth and proximity constraints while simultaneously offering class leading energy efficiency.

"As generative AI continues to evolve, the role of high bandwidth-density, low-power and low latency interconnects between xPUs and HBM modules cannot be overstated", says Chris Pfistner, VP Sales & Marketing of Avicena. "Avicena's innovative LightBundle interconnects have the potential to fundamentally change the way processors connect to each other and to memory because their inherent parallelism is well-matched to the internal wide and slow bus architecture within ICs. With a roadmap to multi-terabit per second capacity and sub-pJ/bit efficiency these interconnects are poised to enable the next era of AI innovation, paving the way for even more capable models and a wide range of AI applications that will shape the future."