PNY Technologies, Inc. ("PNY") today announced the expansion of their XLR8 (ac·cel·er·ate) PC Memory to include 2133MHz and 1866MHz in 16GB and 8GB kits. The 2133MHz DDR3 CAS 10 desktop memory kit is available in 8GB (2 x 4GB) dual channel and 16GB (4 x 4GB) quad channel versions with 9-12-11-27 timings. PNY's fastest memory kits to date meld together the perfect combination of high-speed, low-latency, and racy aesthetics. They feature custom red aluminum heat spreaders designed with fins for more efficient heat dissipation and optimum thermal management. Hardware enthusiasts and gamers will appreciate the new performance, as well as look and feel of PNY's latest memory modules, and feel secure with the PNY Lifetime Warranty.

I-O Data of Japan introduced a new value 8 GB DDR3 memory module (model: DY1333-8G). The module runs at JEDEC-specified speeds of DDR3-1333 MHz, with 9-9-9-24/CR-1T timings, with 1.5V module voltage. The module is sold standalone, and in 16 GB dual-channel kits (model: 8GX2 DY1333). It features standard 240pin UDIMM dimensions, without any heat-spreaders. The single-module kit is priced at 18,060 JPY (US $217.2), while the dual-channel kit goes for 35,280 JPY (US $424.4).

If you thought MSI made too much song and dance about the product design of its R7970 Lightning, particularly the GPU Reactor module, think again. When augmented with liquid nitrogen cooling, the card has the electrical muscle required to sustain 1.7V, and facilitate a staggering 1800 MHz core clock speed, with 1925 MHz memory (7.70 GHz GDDR5 effective), churning out a gargantuan memory bandwidth of close to 370 GB/s, all thanks to the genius of Swedish proverclocker Elmor.

This R7970 Lightning on 'roid-rage was stable enough to bag a 3DMark 11 (performance preset) score of P15035 points. The rest of the test-bed consisted of an Intel Core i7-3960X Extreme Edition six-core chip clocked at 5207 MHz, with 4 GB (4x 1 GB) DDR3 memory clocked at 2314 MHz, and MSI Big Bang XPower II motherboard, to seat it all. Perhaps this is an indication that AMD Radeon HD 7900 can work wonders on potent non-reference designs, such as MSI's R7970 Lightning.

Transcend Information, Inc. (Transcend), a worldwide leader in storage and multimedia products, is proud to announce its launch of 16 GB DDR3-1600 Registered DIMM (RDIMM) and 8GB DDR3L-1333 Low Voltage RDIMM modules. Fully compatible with the latest generation of Intel Xeon and Core i7 processors, the cost-effective DDR3 memory modules provide increased memory density and higher performance, while significantly reducing power consumption.

As Transcend's highest density DDR3 module, the 16GB DDR3-1600 RDIMM is constructed with top quality 4 Gb DDR3 1 Gbx4 35nm DRAM chips that deliver stable performance and durability. A single 16 GB memory module can lower power consumption by a staggering 75% compared with using four 4 GB modules, thereby saving energy and costs. The 16GB DDR3 module is rated at 1600 MHz with low latency of 11-11-11-28 and an operating voltage of a mere 1.5V. Offering memory bandwidth up to 12.8 GB/s and the flexibility to expand maximum capacity to 96 GB (per processor), the 16GB DDR3-1600 RDIMM module allows administrators to create a robust infrastructure that runs memory-intensive applications such as virtualization and cloud computing with ease.

GIGABYTE introduces its latest dual socket 1U rack server based on Intel's brand new Xeon E5-2600 generation. With the significant computing speed boost brought by these new processors, the GS-R12PE deploys powerful computing capabilities which, coupled together with a large and fast memory platform, makes it an ideal product for cloud computing and speed demanding applications such as finance or oil industries.

With up to 8 cores / 16 threads per socket, TDP up to 135W, cache size increased up to 20MB, increased QPI frequency, and doubled inter-socket QPI links, this new Xeon generation brings a significant increase in computing power for demanding server and datacenter applications.

On 27th February 2012, the highest DDR3 memory frequency record was smashed again by the well-known Swiss overclocker, Christian Ney. Using G.SKILL extreme RipjawsZ memory kit, Christian Ney has achieved the astonishing score of DDR3 3736MHz with 4GB high capacity memory stick. "It was a lot of fun while tweaking G.SKILL memory. You can feel the unlimited potential and always want to go higher and higher" said by Christian Ney.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced test results for servers utilizing the world's first 20 nanometer (nm) class Green Memory that were conducted at the Microsoft Technology Center (MTC) in Munich. A system based on Samsung's 20 nm-class DDR3 memory and solid state drives (SSDs) together with Microsoft Windows Server 2008 R2 and Hyper-V proved to be twice as fast as current memory configurations for servers setting up virtual machine instances and recovering data in private cloud environments. These advanced configurations also consumed as much as 50 percent less power per server.

Elpida Memory, Inc. hereby announces that At the meeting of the board of directors held on February 27, 2012, we resolved to file a petition for the commencement of corporate reorganization proceedings and filed the same with the Tokyo District Court. As such petition was duly received on the same day and then the Court has immediately rendered the temporary restraining order to restrain any repayment, etc., the comprehensive prohibition order to prohibit any execution and the supervision and examination order, we hereby notify thereof as follows. In this connection, our consolidated subsidiary, Akita Elpida Memory, Inc., has simultaneously filed a petition for the commencement of corporate reorganization proceedings. For such information, please refer to the separate "Notice on Petition for Commencement of Corporate Reorganization Proceedings and Uncollectibility of Debts of Our Subsidiary".

KINGMAX, a world renowned leading brand of DRAM and flash memory, adds another new product to its Nano Gaming Ram series: 8GB overclocking memory modules in one stick. This is the largest capacity in one stick and the only DDR3 memory modules which doesn't need heatsink for cooling. 8GB DDR3 memory modules with speed faster than 1600MHz also support Intel XMP - Extreme Memory Profiles. Further, 8GB DDR3 memory modules are compatible with Intel X79 platform, enabling quad channel memory setting and allowing memory upgrade up to 32GB. KINGMAX also announces standard desktop 8GB DDR3 modules.

For professionals and enthusiasts who need to work on high quality images or need mass computing, it is most awkward when applications require more memory than real memory can afford. The KINGMAX 8GB DDR3 memory modules with surpassing capacity are designed to solve abovementioned difficulties and to help computer system work much more smoothly and faster. Gamers and overclockers, who like to pursuit ultimate speed, are able to operate quad channel memory setting on the latest Intel X79 platform to boost the system equipped with Intel 2nd Generation Core i7 Extreme performance to the next high level.

Elpida Memory, Inc. (Tokyo: 6665) ("Elpida") hereby announces that it has passed in its board of directors' meeting held today a resolution to add a note as set forth below regarding the matters concerning its assumed going concern in the Consolidated Financial Results for the Third Quarter ended December 31, 2011, and the Quarterly Report. The background that led Elpida to add the note is as set forth below.

Specifically, as of February 2, 2012, the date on which the "Consolidated Financial Results for the Third Quarter ended December 31, 2011" ("Financial Results") were released, Elpida took into account the progress of discussions with the relevant parties mentioned below and decided that there was no material uncertainty regarding its assumed going concern. Therefore, it did not include any note on the matters concerning the assumed going concern.

Micron Technology, Inc. is extending its legacy of memory leadership by introducing a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin markets. These 2-gigabit (Gb) and 4 Gb "DDR3Lm" solutions focus on low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.

The first 2 Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2 Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4 Gb DDR3Lm product delivers the same optimized power efficiency as the 2 Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2 Gb and 4 Gb DDR3Lm will be adopted into Micron's 30-nanometer (nm) class to further optimize the power and performance features, with the 4 Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.

Memory industry major Kingston is working towards reducing prices of its products that are based on NAND flash memory. This includes a large chunk of Kingston's product portfolio, as the only products excluded would be DRAM. NAND flash-based products include memory cards, USB flash drives, and SSDs. Kingston will reportedly cut prices by as much as 15 percent. Responding to a DigiTimes report, Kingston said that it is adjusting its NAND flash product pricing to coordinate with the rest of the industry to shift towards more advanced processes, and that it wants to enhance its presence in the NAND flash market. In other words, Kingston is clearing its inventory to make way for newer, more advanced technology.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash application products, today introduced new industry-leading, single piece 8 GB DDR3-1600 high-density memory modules. Known for industry-high standards of quality control and meticulous device engineering, the new modules will meet and exceed expectations of customers who seek performance and quality in DRAM products.

With this launch ADATA is continuing its tradition as an industry leader in DRAM product line-up. These 8 GB Premier Series DDR3-1600 single piece memory modules allow users to boost system performance over the limitations of memory slot availability.

Inphi Corporation, a leading provider of high-speed analog semiconductor solutions for the communications and computing markets, today announced that load-reduced dual-inline memory modules (LRDIMMs), enabled by Inphi's Isolation Memory Buffer (iMB), have been fully validated and supported on the new AMD Opteron 6200 Series processors, formerly code-named "Interlagos." The validation provides memory vendors and systems designers the assurance that they can populate AMD Opteron 6200 Series-based systems with up to 768 GB of cost-effective memory for today's demanding enterprise and cloud-based applications in 2P servers.

The Inphi iMBGS02A passed several rigorous validation tests by AMD across process, voltage temperature and frequency. Now shipping in volume and fully compliant with the memory-buffer specification of the JEDEC Solid State Technology Association, the devices have now been verified for compliance on the AMD Opteron 6200 Series platform, for devices' interoperability.

PNY Technologies, Inc. ("PNY") is considered a leading designer, manufacturer and a worldwide leader in DRAM Memory and Flash Memory products, has announced the release of their elegant and stunning range of Clip Attaché USB flash drives. The Clip Attaché serves a dual purpose of an efficient storage device as well as a vanity feature to suit the pace and the trend of the metropolis lifestyle.

PNY Clip Attaché is encased in a colorful metallic case illustrated with 4 different floral designs (plum, orchid, bamboo and chrysanthemum) inspired by traditional Seiko art and is an effortless blend of modern technology and classic culture. Available in four different colors to choose from it provides a personalized selection of storage accessories.

Elpida Memory, Inc. ("Elpida", TOKYO: 6665 JP), the world's third largest Dynamic Random Access Memory ("DRAM") manufacturer, today announced the development of its first-ever high-speed non-volatile resistance memory (ReRAM) prototype. As the ReRAM prototype was made using a 50-nanometer (nm[1]) process technology it has a memory cell array operation of 64 megabits[2], one of the highest densities possible for ReRAM. The prototype was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution. Further work on ReRAM development is being conducted with Sharp Corporation ("Sharp", TOKYO: 6753 JP), the National Institute of Advanced Industrial Science and Technology (AIST, another Japanese public institution) and the University of Tokyo.

ReRAM (Resistance Random Access Memory) is next-generation semiconductor memory technology that uses material which changes resistance in response to changes in the electric voltage. This new type of non-volatile memory can store data even when the power supply is turned off. Its most attractive feature is that it can read/write data at high speeds using little voltage. While dynamic random-access memory (DRAM) is superior to existing non-volatile memory with respect to read/write speeds and endurance, DRAM quickly loses data when the power supply is removed. NAND flash memory, a leading example of nonvolatile memory, retains data even when the power is removed but has performance measures that are inferior to DRAM.

According to a Japanese newspaper (Yomiuri), the country's last DRAM manufacturer, Elpida Memory, is fishing for a merger with two other memory companies, US-based Micron Technology and Taiwan's own Nanya Technology.

If it will go through, the merger would create a company better positioned in the memory market, and more capable of fighting South Korean companies like Samsung Electronics and Hynix Semiconductor.

While the company didn't comment on the merger talks, Elpida's President Yukio Sakamoto is said to have made a trip to the US last week to further negotiations with Micron. It's still uncertain how advanced are the talks but a deal could be signed this year.

Samsung Electronics Co., Ltd., a global leader in advanced semiconductor technology solutions, announced today that it started producing embedded multi-chip package (eMCP) memory for use in the rapidly expanding market segment for entry- to mid-level smartphones. Samsung's new eMCP solutions come in a wide range of densities, utilizing LPDDR2 (low power double-data-rate 2) DRAM made with 30 nanometer (nm) class process technology and NAND flash memory using 20 nm-class technology.

Punctuating 30 years of nanotechnology research, scientists from IBM Research (NYSE: IBM) have successfully demonstrated the ability to store information in as few as 12 magnetic atoms. This is significantly less than today's disk drives, which use about one million atoms to store a single bit of information. The ability to manipulate matter by its most basic components - atom by atom - could lead to the vital understanding necessary to build smaller, faster and more energy-efficient devices.

While silicon transistor technology has become cheaper, denser and more efficient, fundamental physical limitations suggest this path of conventional scaling is unsustainable. Alternative approaches are needed to continue the rapid pace of computing innovation.

Following the success of their v175w ice cream flash drives PNY Technologies, Inc. ("PNY") is considered a leading designer, manufacturer and a worldwide leader in DRAM Memory and Flash Memory products, introduced a new USB flash drive, the v270w. The innovative flash drive comes in an egg shaped design that gives a light-hearted and fun vibe whilst offering fast and convenient transfer of files on the go.

The HP v270w is covered in a distinctive multicolored rubber material offering water and shock resistance that protects and prevents any data loss from accidental drops or external collisions. The egg shaped cover is embossed in wavy design which provides better grip and easy disconnection. The bright use of white and sunshine yellow exudes a playful and radiant appearance.

Kingston showed off its wares to the media, which included one product in particular that garnered some interest, the new HyperX T1 modules. Designed keeping in mind today's congested high-end motherboards, the HyperX T1 modules feature compound aluminum heatsinks that are designed in away that doesn't make the modules thicker, but taller. These modules are twice as tall as usual kits such as the HyperX Genesis. Their PCBs, too, are taller, and probably have an exposed copper layer for heat-transfer, à la Corsair Dominator. The heatsink branches out into fins at the top, for passive heat transfer to surrounding air. These modules will probably comply with new XMP 1.3 specifications, and offer out-of-the-box DRAM speeds in the range of DDR3-2133 to DDR3-2600, with quite some OC headroom to spare.

Kingston Technology Company, Inc., the independent world leader in memory products, today announced the launch of HyperX Red Limited Edition Memory and a new look for HyperX LoVo low-voltage modules. These memory modules have a new look and are designed for PC modders, system builders and entry-level gamers looking to push the performance envelope.

HyperX Red Limited Edition has a sleek and aggressive look that provides a stylish accent to any motherboard or desktop computer in which it is installed. HyperX Red is Intel XMP ready and is available in 8 GB kits and 4 GB single modules at 1600 MHz and 1333 MHz, in both 1.65v and 1.5v. With the ease of installation and HyperX reliability, these new modules meet the needs of consumers and gamers alike who seek higher performance via faster speeds and larger capacities.

SanDisk Corporation, a global leader in flash memory storage solutions, today announced that the iNAND Ultra line of products will be the first of its embedded flash memory products to move to 19 nanometer (nm) manufacturing technology, the industry's most advanced chip making process.

Crucial, a leading global brand of memory and storage upgrades, today announced the immediate availability of 8 GB DDR3 memory modules across the Crucial Ballistix Sport, Tactical, and Elite series. By taking advantage of Micron's 4 Gb DRAM technology, the new 8 GB modules provide users with the maximum capacity, performance, and density needed to run data-and graphic-intensive applications smoothly and efficiently.

Available in low-latency DDR3-1600 MHz and DDR3-1866 MHz modules, Crucial 8 GB Ballistix modules can be installed in configurations up to 64 GB in some systems, including the new Intel X79 platforms. Additionally, the complete line of Ballistix memory features a new logo treatment and updated heat spreader designs.

Toshiba Corporation today announced the development of BENAND, a versatile, multi-application single level cell (SLC) NAND flash memory with an embedded error correction code (ECC). BENAND's diverse applications include LCD TVs and digital cameras along with robots and other industrial applications. Samples of eight BENAND products in two capacities, 4 Gigabit and 8 Gigabit, will be available from today and mass production will follow from March 2012.

The simple interface and high reliability of small capacity SLC NAND has won it wide use in consumer applications and industrial programming. Until now, the ECC has been embedded in the host processor and corrected 1 bit per 512 bytes. However, advances in memory process technology require enhanced error correction; more than 4 bit correction per 512 bytes for NAND flash fabricated with 32nm process. For NAND flash memory without ECC fabricated with 32nm and beyond, the controller in the host processor must be changed to secure the required level of correction.