Wednesday, September 14th 2022
Intel "Raptor Lake" 8P+16E Wafer Pictured
Andreas Schilling with Hardwareluxx.de, as part of the Intel Tech Tour Israel, got to hold a 12-inch wafer full of "Raptor Lake-S" dies. These are dies in their full 8P+16E configuration. The die is estimated to measure 257 mm² in area. We count 231 full dies on this wafer. Intel is building "Raptor Lake" on the same 10 nm Enhanced SuperFin (aka Intel 7) node as "Alder Lake." The die is about 23% larger than "Alder Lake" on account of two additional E-core clusters, possibly larger P-cores, and larger L2 caches for both the P-core and E-core clusters. "Raptor Lake" gains significance as it will be the last client processor from Intel to be built on a monolithic die of a uniform silicon fabrication node. Future generations are expected to take the chiplets route, realizing the company's IDM 2.0 product development strategy.
Source:
Andreas Schilling (Twitter)
20 Comments on Intel "Raptor Lake" 8P+16E Wafer Pictured
wccftech.com/amd-zen-4-for-ryzen-7000-intel-raptor-cove-for-raptor-lake-cpus-have-almost-similar-ipc/
Summary:
1-3% IPC increase from ADL to RPL
2-4% IPC advantage RPL over Zen4
Not much change going from DDR5 4800 to DDR5 6000 for both companies
Gracemont sucks at floating point instructions
Is there more than one dicing method used in the industry? With some luck, that's how you get those processors with F suffix, haha.
Is that silicon able to be recycled/reused on future wafers, or are they just thrown away as part of the cost of business?
While EUV solves some of this portion by allowing the masks to block light with more clarity, the biggest problem with edge roughness comes from the photomasks involved. Very slight changes in light deflection during the process due to the exposure angle leads to one or multiple layered features on the less focused edge losing their integrity and being basically junk. While from a macro level these chips look the same, at the micro level they could have entire structures printed wrong, missing critical connections between oxide layers, or have many small wire defects where the connecting wires were not printed to the proper size or fused with their neighbors.
Also not every mask set includes the edge of the wafer. In prior generation lithography techniques there's sometimes less desire to print to the edges for lead-time (time to manufacture and ship) reasons if yields are of little concern. Smaller ICs like those for networking, DACs, media encoder ASICs, or hobbyist FPGAs made on older nodes don't need to be as worried about detail preservation. In part due to those lithography machines being exceptionally well tuned by now, and also due to many of those types of ICs being relatively simple in design with many fewer masks per print with less chance of egregious errors in the process.
A small portion at a time is exposed to UV light. It can be one die if it's very large, or several smaller dies, with a total size no larger than 26 x 33 mm (the reticle size). The wafer moves between the exposures - it's mounted on a trolley with linear motors that move it across a flat surface. The optical system is stationary. One exposure takes a couple tenths of a second, and the movement (with nanometer precision!) takes about as much time too. Partial chips at the edge take as much time as whole chips and it would be better to skip them - but there are good reasons to not skip them, already explained in this thread.
So all exposures across the wafer are equally sharp. However, exposure is far from being the only critical step in manufacturing. There's deposition, baking, polishing, cleaning and so on. Blank wafer manufacturing too, of course. Some of these steps may not be perfectly uniform across the wafer. Best quality dies are usually near the center if I remember correctly. There's a guy called Ian Cutress, he's the right guy to answer this question, and breakfast time is the best time to ask him. Yes. On a wafer held in bare hands like this, all dies are bad dies. Even those without obvious fingerprints.
Well, maybe those partial chips are useful for destructive testing. Measurement and checking is done many times during the ~3 months of wafer manufacturing, and if some testing method requires the chip to be destroyed (for example, by grinding or etching layers away), it's cheaper to do it on a chip that will never work anyway. In addition, these chips can be exposed with less or more UV radiation, and then analysed to see if the dose needs to be adjusted for the rest of the batch of wafers.