Friday, September 22nd 2023
SK hynix Presents Advanced Memory Technologies at Intel Innovation 2023
SK hynix announced on September 22 that it showcased its latest memory technologies and products at Intel Innovation 2023 held September 19-20 in the western U.S. city of San Jose, California. Hosted by Intel since 2019, Intel Innovation is an annual IT exhibition which brings together the technology company's customers and partners to share the latest developments in the industry. At this year's event held at the San Jose McEnery Convention Center, SK hynix showcased its advanced semiconductor memory products which are essential in the generative AI era under the slogan "Pioneer Tomorrow With the Best."
Products that garnered the most interest were HBM3, which supports the high-speed performance of AI accelerators, and DDR5 RDIMM, a DRAM module for servers with 1bnm process technology. As one of SK hynix's core technologies, HBM3 has established the company as a trailblazer in AI memory. SK hynix plans to further strengthen its position in the market by mass-producing HBM3E (Extended) from 2024. Meanwhile, DDR5 RDIMM with 1bnm, or the 5th generation of the 10 nm process technology, also offers outstanding performance. In addition to supporting unprecedented transfer speeds of more than 6,400 megabits per second (Mbps), this low-power product helps customers simultaneously reduce costs and improve ESG performance.
Visitors to the SK hynix booth could also see its DDR5-based 96 gigabyte (GB) CXL memory module products. The exhibit introduced the application cases of CXL such as with AI acceleration systems, and highlighted the benefits of the technology in terms of performance, reliability, security, and maintenance. Other products on display included LPDDR5X (Low Power Double Data Rate 5 eXtended) for mobile devices and DDR5 modules for servers and PCs.
Additionally, company employees held a session on how DDR5 and CXL memory can realize data-driven innovation. During the session, Jinpyung Kim of the DRAM Product Planning department at SK hynix and Brian Yoon from the DRAM Technology Planning department at SK hynix America discussed how DDR5 and CXL technologies are set to play a key role in the era of AI and big data.
"We will continue to showcase our advanced technologies to strengthen partnerships with our customers and further solidify our position as a global technology company that leads the way in various markets," said Sungsoo Ryu, head of DRAM Product Planning at SK hynix.
Source:
SK Hynix
Products that garnered the most interest were HBM3, which supports the high-speed performance of AI accelerators, and DDR5 RDIMM, a DRAM module for servers with 1bnm process technology. As one of SK hynix's core technologies, HBM3 has established the company as a trailblazer in AI memory. SK hynix plans to further strengthen its position in the market by mass-producing HBM3E (Extended) from 2024. Meanwhile, DDR5 RDIMM with 1bnm, or the 5th generation of the 10 nm process technology, also offers outstanding performance. In addition to supporting unprecedented transfer speeds of more than 6,400 megabits per second (Mbps), this low-power product helps customers simultaneously reduce costs and improve ESG performance.
Additionally, company employees held a session on how DDR5 and CXL memory can realize data-driven innovation. During the session, Jinpyung Kim of the DRAM Product Planning department at SK hynix and Brian Yoon from the DRAM Technology Planning department at SK hynix America discussed how DDR5 and CXL technologies are set to play a key role in the era of AI and big data.
"We will continue to showcase our advanced technologies to strengthen partnerships with our customers and further solidify our position as a global technology company that leads the way in various markets," said Sungsoo Ryu, head of DRAM Product Planning at SK hynix.
9 Comments on SK hynix Presents Advanced Memory Technologies at Intel Innovation 2023
news.skhynix.com/why-selector-only-memory-is-the-future-for-ultra-fine-processes/
Oh do tell :D
If HBM really is so expensive, I'm wondering why it is so. SKh monopoly? Stacking many dies with TSV, a technology that's often avoided due to price? (Largest capacitly DDR5 DIMMs, which employ TSV, are expensive as hell too, and you don't see it in NAND die stacking. )
The RAM dies are nothing special, they can't be extremely costly to manufacture.
3D Cross-Point Array seems a possible arch for all ReRAMs. Both IMFT‘s & hynix's 3DXPs are kinds of PCM, a type of ReRAM.
SK hynix's 3DXP uses chalcogenide, maybe IMFT's as well.
There isn't, the last time HBM2 prices actually appeared was in a GamersNexus article dissecting the Vega components, something like US$175 for 16GB HBM2 + Interposer. Recently, some articles appeared stating that the price of HBM3 would have increased by up to 5x due to the demand generated by AI.
It's not a question of monopoly, it's just a product with complex production methods that inevitably lead to low yields, despite this it is true that SKH has some advantages in production efficiency:
"At the beginning, competitors such as Samsung Electronics predicted that it would be impossible to successfully adopt the MR-MUF method. However, SK hynix's PKG development department obtained material supply through Japan's NAMICS company and successfully developed it. According to rumors, major DRAM manufacturers such as Samsung Electronics were shocked when they heard the above news. It is understood that Samsung Electronics is also currently studying the MR-MUF method.
A relevant person in the industry said: "The thermal conductivity of the MR-MUF method is about 2 times higher than that of the NCF method, which has a great impact not only on the process speed, but also on the yield rate. Although it is still in the early stage, it will start from next year. , the HBM3 market is expected to officially expand.”
The secret to beating Samsung Electronics' HBM3 is MR-MUF technology - iMedia (min.news)