Intel has successfully deployed two advanced ASML High-NA Twinscan EXE:5000 EUV lithography systems at its D1 development facility near Hillsboro, Oregon, processing approximately 30,000 wafers in a single quarter. The High-NA EUV systems, each reportedly valued at $380 million, represent a substantial improvement over previous lithography tools, achieving resolution down to 8 nm with a single exposure compared to the 13.5 nm resolution of current Low-NA systems. Early operational data indicates these machines are approximately twice as reliable as previous EUV generations, addressing reliability challenges that previously hampered Intel's manufacturing progress. The ability to accomplish with a single exposure what previously required three exposures and approximately 40 processing steps has been reduced to just "single digit" processing steps.

Intel has historically been an early adopter of high-NA EUV lithography, a much more aggressive strategy than its competitors like TSMC, which manufactures its advanced silicon using low-NA EUV tools. The company plans to utilize these systems for its upcoming 14A chip manufacturing process, though no specific mass production date has been announced. While ASML classifies these Twinscan EXE:5000 systems as pre-production tools not designed for high-volume manufacturing, Intel's extensive wafer processing is more of a test bed. The early adoption provides Intel with valuable development opportunities across various High-NA EUV manufacturing aspects, including photomask glass, pellicles, and specialized chemicals that could establish future industry standards. Intel's current 18A node is utilizing Low-NA lithography tools, where Intel is only exploring High-NA with it for testing, before moving on to 14A high-volume manufacturing with High-NA EUV.