Late last month, speculative Snapdragon 8 Elite Gen 2 (aka SM8850) technical details emerged online. Up until then, Digital Chat Station's Weibo channel has delivered all sorts of pre-release information—mostly concentrating on Qualcomm's alleged redeployment of a familiar "2 + 6" core configuration, and selection of TSMC's 3 nm "N3P" node process. Earlier today, the veteran leaker predicted a couple of new-gen improvements—first concentrating on the alleged mobile chipset's "Adreno 840" integrated graphics solution. Digital Chat Station (DCS) believes that the company's engineering team has increased their iGPU design's independent cache size "from 12 MB to 16 MB," leading to: "early setting performance increased by 30%±." It is not clear whether this rumored upgrade has affected the SoC's L2 or L3 cache provisions, but the current-gen Snapdragon 8 Elite mobile processor makes do with 12 MB of L2 cache per cluster. Additionally, DCS reckons that an enlargement of caches has resulted in performance of Qualcomm's "second-generation self-developed CPU architecture" increasing "by 25%±."

As interpreted by Wccftech: "the upcoming SoC will now feature 32 MB of L2 cache, with the L3 count currently unknown at this time. The initial test results revealed that the 'Snapdragon 8 Elite Gen 2' delivered a 30 percent performance increase, but it is unconfirmed if this delta exists between the Snapdragon 8 Elite or some other silicon." DCS has heard whispers about the upcoming chip supporting "new generations of high-speed LPDDR5X/LPDDR6" memory. The mentioning of LPDDR5X is not surprising; given that the current Snapdragon 8 Elite model is already up to snuff with this spec. Just over a year ago, JEDEC was reportedly working on the finalization of LPDDR6 standards for mobile platforms. Shortly thereafter, smartphone industry watchdogs started to theorize about the arrival of a so-called "Snapdragon 8 Gen 4" chip with LPDDR6 RAM in 2025. Fast-forward to the present day; fresh reports suggest that manufacturers will have the option to outfit next-gen flagship devices with "bog-standard" LPDDR5X or faster/more efficient LPDDR6 memory.