During the recent IEDM conference, TSMC previewed its process roadmap for delivering next-generation chip packages packing over one trillion transistors by 2030. This aligns with similar long-term visions from Intel. Such enormous transistor counts will come through advanced 3D packaging of multiple chipsets. But TSMC also aims to push monolithic chip complexity higher, ultimately enabling 200 billion transistor designs on a single die. This requires steady enhancement of TSMC's planned N2, N2P, N1.4, and N1 nodes, which are slated to arrive between now and the end of the decade. While multi-chipset architectures are currently gaining favor, TSMC asserts both packaging density and raw transistor density must scale up in tandem. Some perspective on the magnitude of TSMC's goals include NVIDIA's 80 billion transistor GH100 GPU—among today's largest chips, excluding wafer-scale designs from Cerebras.

Yet TSMC's roadmap calls for more than doubling that, first with over 100 billion transistor monolithic designs, then eventually 200 billion. Of course, yields become more challenging as die sizes grow, which is where advanced packaging of smaller chiplets becomes crucial. Multi-chip module offerings like AMD's MI300X and Intel's Ponte Vecchio already integrate dozens of tiles, with PVC having 47 tiles. TSMC envisions this expansion to chip packages housing more than a trillion transistors via its CoWoS, InFO, 3D stacking, and many other technologies. While the scaling cadence has recently slowed, TSMC remains confident in achieving both packaging and process breakthroughs to meet future density demands. The foundry's continuous investment ensures progress in unlocking next-generation semiconductor capabilities. But physics ultimately dictates timelines, no matter how aggressive the roadmap.